Abstract:One-step metal-assisted chemical etching (MACE) was used to fabricate porous silicon nanowire arrays. Also, the effects of doping level, AgNO3 concentration, and HF concentration on the morphology and structure of porous silicon nanowire were investigated. The results show that the higher doping level is beneficial for etching the silicon wafer and forming silicon nanowire arrays. This is because the higher doping level introduces more impurities and defects on the surface of the silicon wafer, and at the same time, the Schottky barrier between the silicon wafer with the higher doping level and the solution is lower. Thus, the silicon wafer is easier to oxidate to form nanowire arrays. The AgNO3 concentration plays a critical role in the fabrication of the porous silicon nanowire arrays during the one-step MACE process. If AgNO3 concentration is too low or too high, corrosion pits and collapsed clusters of nanowires could form on the surface of the silicon wafer. When AgNO3 concentration was 0.02 mol·L-1, silicon nanowires grew and became longer, eventually forming a porous array of silicon nanowire. In the meantime, as silicon nanowires grew, capillary stress between nanowires caused agglomeration at the top of some nanowires. Furthermore, when HF solution concentration exceeded 4.6 mol·L-1, the length of silicon nanowire increased with increasing HF concentration. Furthermore, a porous structure was formed on top the silicon nanowire, and the porosity of the silicon nanowires increased with increasing HF concentration. This was due to a large number of Ag+ random nucleations at the top of the nanowires, and lateral etching of the silicon nanowires occurred. In the end, the formation process of the porous silicon nanowires is explained by a model based on the experimental phenomena. It is attributed to the deposition of silver ions and the oxidation of dissolved silicon substrates.

Morphology study of electrochemically etched silicon pore array

Electrochemically Etched Pore Array in Silicon with Large Spacing and High-Aspect-ratio

Electrochemical Pore Etching in N- and P-Type Ge

High Anodic-Voltage Focusing of Charge Carriers in Silicon Enables the Etching of Regularly-Arranged Submicrometer Pores at High Density and High Aspect-Ratio

Influences of Temperature and Etching Voltage on the Surface Morphology of Photo-Electro-Chemical Etching for Silicon Microchannel Arrays

Photo-electrochemical Etching of Macroporous Silicon Arrays Used in Silicon Microchannel Plates

Influence of Surfactant on Aperture of Photo-Electro-chemical Etching for Silicon Microchannel Plate

Pore size modulation in electrochemically etched macroporous p-type silicon monitored by FFT impedance spectroscopy and Raman scattering.

Fabrication of Ordered Macropore Arrays in n-Type Silicon Wafer by Anodic Etching Using Double-Tank Electrochemical Cell

Fabrication of Silicon Nanopore Arrays with Three-Step Wet Etching

Electrochemical Formation of Self-positioned Nano-Sized Pores on Oxidized Porous Silicon Substrate

Dimensional Constraints on High Aspect Ratio Silicon Microstructures Fabricated by HF Photoelectrochemical Etching

Fabrication of Silicon Nanopore Arrays Using A Combination of Dry and Wet Etching

Porous Silicon Nanowire Arrays Fabrication Through One-Step Metal-Assisted Chemical Etching

Shape Formation Analysis of Silicon Nanopore Fabricated by Anisotropic Wet Etching Method

Transmission electron microscopy studies of photochemically etched porous silicon

Fabrication Of Inverted-Pyramid Silicon Nanopore Arrays With Three-Step Wet Etching

Impact of the Doping Concentration on the Density of Pores Using Metal-Assisted Chemical Etch

Morphological and Electrical Features of Porous Silicon Prepared by Metal-Induced Chemical Etching

Massive Fabrication of Silicon Nanopore Arrays with Tunable Shapes

Microstructures and Emission Characteristics of Porous Silicon Films