Conductive ATO Thin Film Prepared by Sol-gel Method

WU Chun-chun,YANG Hui,LU Wen-wei
DOI: https://doi.org/10.3969/j.issn.1001-2028.2005.03.014
2005-01-01
Abstract:Anhydrous SnCl4 as raw material, doped SnO2 sol was prepared by sol-gel method which was very stable. Through the sol, the ATO thin film was got by dipping method. Sol-gel progress of this new method was studied by DSC-TG,XRD,IR measurements, and the conductivity of the thin film was measured by Hall method. The result indicated that the reason for stability of the sol was existence of the ion chlorine which inhibited the condensation reaction between the product of hydrolysis. And that particle size of thin film increased exponentially and the resistivity of ATO film decreased with increasing of the drying temperature, the minimum resistivity of 3.7 ?·cm reached at 700℃.
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