Abstract:Sb-doped SnO 2 (ATO) films have received extensive attention as transparent conductive films, but there is still a lack of in-depth and systematic study on combined effects of substrate temperature ( T s ) and annealing temperature ( T a ) on their transparent conductive properties. In this study, ATO films were prepared using RF magnetron sputtering at RT∼400 °C and subsequently annealed at 200–1000 °C. The results show that the conductive properties of the films enhance (with a decrease in resistivity from 1.15×10 -1 to 2.15×10 -3 Ω•cm) and the average visible-light transmittance ( T Vis ) decreases (90.16 → 38.24%) with increase of T s . With the increase of T a , the conductive properties of the films prepared at different T s tend to first enhance and then degrade, and the T Vis basically shows a trend of first decreasing and then increasing. After annealing at 600 °C, the films prepared at RT and 100 °C can achieve better comprehensive properties (resistivity of 2.50×10 -3 and 1.64×10 -3 Ω•cm, carrier concentration of 3.35×10 20 and 4.93×10 20 cm -3 , mobility of 7.73 and 7.76 cm 2 /V•s, sheet resistance of 84 and 55 Ω/sq., and T Vis of 86.63 and 79.50%). In order to explore the intrinsic mechanism of the optical and electrical performance of ATO films changing with T s and T a , the preferred orientation, crystallinity, and stress state of the films were analyzed by XRD, and their surface morphology was observed by SEM. Meanwhile, the chemical states of Sn, O and Sb as well as Sb content in the films were analyzed by XPS, and their lattice vibration modes of the film were studied by Raman spectra. Finally, the process-structure-properties correlations were established for the ATO films.

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