Abstract:As power efficiency becomes essential in automotive applications, DC-DC converters are widely employed [1]. However, size and thermal limits have made it challenging to continue using standard CMOS-based converters. Gallium Nitride (GaN) FETs, on the other hand, have a much higher conductivity with small size/capacitance in comparison to silicon FETs, enabling a highly efficient power conversion at high switching frequency (f SW ). However, there are several issues that must be resolved before using GaN in automotive. High f SW incurs larger di/dt and dv/dt transitions which injects high frequency electromagnetic interference (EMI) noise into the input bus. This creates unwanted noise or even a malfunction in a safety-critical system. A bulky input filter can reduce EMI, but it greatly increases size and cost. Several techniques [2-5] are reported to mitigate EMI. Frequency hopping using discrete frequencies is proposed in [2], but cannot spread the frequency evenly to lower the peak noise effectively. Alternatively, a series resistor is typically added at the gate of the GaN FET to slow down the transition [3-4]. However, the switching loss is dramatically increased. To mitigate this, adjustable driving strength is proposed in [5]. Unfortunately, the sensing and driver delays confine its use in low f SW applications, where the switch node rising time is several tens or hundreds of ns. Another issue of high f SW operation is that it causes significant current and voltage spikes due to the parasitics at the drain/source of the high side GaN FET (M H ), which could lead to GaN VDS breakdown or damage on logic-level FETs. Thus, EMI noise suppression and reliable operation of GaN FETs remain as major challenges in realizing high f SW power converters for automotive-use.

Gate Drive Design Considerations for Enhancement-mode GaN Power Devices

25.2 A 10mhz 3-to-40v VIN Tri-Slope Gate Driving GaN DC-DC Converter with 40.5dbµv Spurious Noise Compression and 79.3% Ringing Suppression for Automotive Applications

A 2–10 MHz GaN HEMTs Half-Bridge Driver with Bandgap Reference Comparator Clamping and Dual Level Shifters for Automotive Applications

A Tri-Slope Gate Driving GaN DC–DC Converter with Spurious Noise Compression and Ringing Suppression for Automotive Applications

A GaN HEMTs Half-Bridge Driver with Bandgap Reference Comparator Clamping for High-Frequency DC-DC Converter.

Gate drive design considerations for high voltage cascode GaN HEMT

Maximizing the performance of 650 V p-GaN gate HEMTs: Dynamic ron characterization and gate-drive design considerations

High Reliability GaN FET Gate Drivers for Next-generation Power Electronics Technology

Resonant Gate Driver for High Speed GaN HMET with Dv/dt Control

Study and Implementation of 600-V High-Voltage Gate Driver IC With the Common-Mode Dual-Interlock Technique for GaN Devices

Gate and barrier layer design of E-mode GaN HEMT with p-GaN gate structure

A High-Voltage Half-Bridge Gate Drive Circuit for GaN Devices with High-Speed Low-Power and High-Noise-immunity Level Shifter

A Monolithic GaN Driver and GaN Power Switch with Power-rail Charging Saturation Bootstrap technique achieving gate rising and falling time ratio of 1.28

Maximizing the Performance of 650-V P-Gan Gate HEMTs: Dynamic RON Characterization and Circuit Design Considerations

A Resonant Drive Circuit for GaN Power MOSHFET

Design and Optimization of Gate Driver Integrated Multichip 3-D GaN Power Module

Evaluation and applications of 600V/650V enhancement-mode GaN devices

A 600V High-side Gate Drive Circuit with Ultra-low Propagation Delay for Enhancement Mode GaN Devices

Monolithic Integration of Gate Driver and Protection Modules with P-GaN Gate Power HEMTs

Modeling the Gate Driver IC for GaN Transistor: A Black-Box Approach

A novel active gate drive for HV-IGBTs using feed-forward gate charge control strategy