Laser Etching Holes Diameter Controlling and Transverse Etching

Lin LIU,Su-ying ZHAO,Juan-xiu LIU,Chao Fan,Yun-feng WU,Yu-lin WANG,Yu-tang YE
DOI: https://doi.org/10.3321/j.issn:1005-0086.2005.07.020
2005-01-01
Abstract:A new method—laser-assisted wet mask-etching was proposed.Theoretical analysis and experimental results show that the etched feature can be effectively controlled by using this method;also,highly steep side walls can be obtained in deep etched holes because the laser beam is normal to the surface of semiconductor substrates without spreading,and because of the nearly homogeneous power density in the center of laser beam,the etching velocity in etched area is approximately same,and furthermore,the etched area without significant height difference can be obtained.Laser-assisted wet mask-teching method avoid laser irradiating the side walls of etched holes.transverse etching is mild etching instead of laser wet etching and little influence to the shape of holes.This paper especially studied the performance of mild etching of GaAs substrate and have reported the valuable experiment outcome in order to illuminate the transverse etching in laser-assisted wet mask-etching method.
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