Etching Droplet Soaking and Etching Character on Surface of GaAs under Laser Irradiation

TIAN Xiao,YE Yu-tang,LIU Lin,CHEN Zhen-long,LUO Ying,WANG Yu-lin
DOI: https://doi.org/10.3969/j.issn.0253-2743.2007.04.028
2007-01-01
Abstract:The diffusing and etching characters of an acidic drop,which is on the GaAs wafer,under laser irradiation,are described.Diffusing process of H_2SO_4-H_2O_2 drop,and effects of drop edge position and crystal anisotropy are observed.Eventually a valuable outcome has been obtained. Experimental results show that etching-drop diffuse on the surface of GaAs,phenomenon of etching weaken from center to edge and phenomenon of incompletion-etching appear in the edge;through watching different position of a same drop,different phenomenon of etching in the edge has been found.Because of crystalline anisotropy,the im- ages of etching have direction clearly.The theory play a important role in technics of semiconductor processing.
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