Abstract:With the development of integrated circuit towards the characteristics of the low-power consumption, miniaturization and high integration, three-dimensional integration technology based on Through-Silicon Via (TSV) comes into being. However, the thermal accumulation caused by the maximum stack density and the thermal stress caused by the mismatched thermal expansion coefficient between TSV surrounding materials will lead to the reliability problems such as circuit function failure and device performance drift. In this paper, the heat dissipation performance and thermal-mechanical reliability of TSV array in 2.5D silicon interposer were studied when the operation temperature is increased from 20°C to 100°C. Firstly, the influences of the geometrical parameters, such as the through hole radius, depth to width ratio, insulation thickness and TSV spacing, on thermal-mechanical reliability were analyzed for single TSV, paired TSV and 3*3 TSV array structures. Secondly, a configuration of TSV regular hexagonal array in silicon interposer is proposed to improve its heat dissipation performance.Our simulation results disclose that the stress is mainly concentrated at the junction where SiO2 layer deviates to copper and silicon substrate deviates to SiO2, which indicates the SiO2 layer is most prone to fracture. The through hole radius should be designed as small as possible to reduce the thermal stress, and a thicker SiO2 insulation layer thickness will induce the better thermal-mechanical stability of TSV. The optimized TSV's depth to width ratio should be set above 5 with the simultaneous consideration of the stress for silicon substrate, insulating layer, filled copper. For multiple TSVs, the spacing should be greater than twice the diameter to eliminate the influence of thermal stress between TSVs. In addition, in the case of the same spacing, the equivalent unit temperature of TSV regular hexagonal array distribution is 2.9°C lower than that of conventional matrix array distribution. The analysis and design of TSV array in 2.5D silicon interposer is promising to offer guideline to the future advanced package development.

TSV Array-Based 3D ICs Design Exploration and Optimization

Different designs of TSVs for 3D IC: Signal integrity analysis with cascaded scattering matrix

3D IC Design for HEVC Motion Estimation Module

3DCAM: A Low Overhead Crosstalk Avoidance Mechanism for TSV-Based 3D ICs

Redundant Vias Insertion for Performance Enhancement in 3D ICs.

Yield and Reliability Enhancement for 3D ICs

Low Stress TSV Arrays for High-Density Interconnection

Efficient Region-Aware P/G TSV Planning for 3D ICs

Thermal-Mechanical Analysis of TSV Array in 2.5D Silicon Interposer

Yield-aware Time-Efficient Testing and Self-Fixing Design for TSV-based 3D ICs

Modeling and Analysis of TSV Arrays with Different Ground and Signal Distributions in 2.5D/3D Integration Systems

Power Delivery Design for 3-D ICs Using Different Through-Silicon Via (TSV) Technologies

Electrical Characterization of RF TSV for 3D Multi-Core and Heterogeneous ICs

An Improved Layer by Layer TSV Assignment Optimization for Multi-Layer 3-D ICs

Clustered Fault Tolerance TSV Planning for 3-D Integrated Circuits.

System-Level Analysis of 3D ICs with Thermal TSVs

Cost-Effective Test Optimized Scheme of TSV-Based 3D SoCs for Pre-Bond Test

Adaptive 3D-IC TSV Fault Tolerance Structure Generation

TSVs-aware floorplanning for 3D integrated circuit

Cellular Structure-Based Fault-Tolerance TSV Configuration in 3D-IC

On Effective Through-Silicon Via Repair for 3-D-stacked ICs