Research and Progress of Wet Etching for GaN

HUANG Sheng-rong,CHEN Chao

DOI: https://doi.org/10.3969/j.issn.1671-4776.2005.06.004

2005-01-01

Abstract:The progress of wet etching for GaN is reviewed. We have discussed the mechanism of photo-assisted chemical wet etching,the difficulty of p-GaN wet etching and the application of wet etching in the research of GaN.

What problem does this paper attempt to address?

Application of Wet Chemical Etching in GaN-based Materials

Yan Zhou

2007-01-01

Abstract:In this paper,the wet chemical etching rate of AlGaN in different temperature of KOH aqueous solution was calculated and discussed.It was also found that wet chemical etching after dry etching can effectively eliminate the damage introduced by dry etching process and improve the device performance.The surface morphologies and the compositions of both sets were observed by scanning electron microscopic(SEM),atomic force microscopic(AFM) and Auger electron spectroscopy(AES).The leakage currents of visible-blind devices were compared.It is obvious that dry etching damages and devices leakage current are reduced after wet chemical etching.
Wet etching of GaN, AlN, and SiC: a review

D. Zhuang,J.H. Edgar

DOI: https://doi.org/10.1016/j.mser.2004.11.002

2005-01-01

Materials Science and Engineering: R: Reports

Abstract:The wet etching of GaN, AlN, and SiC is reviewed including conventional etching in aqueous solutions, electrochemical etching in electrolytes and defect-selective chemical etching in molten salts. The mechanism of each etching process is discussed. Etching parameters leading to highly anisotropic etching, dopant-type/bandgap selective etching, defect-selective etching, as well as isotropic etching are discussed. The etch pit shapes and their origins are discussed. The applications of wet etching techniques to characterize crystal polarity and defect density/distribution are reviewed. Additional applications of wet etching for device fabrication, such as producing crystallographic etch profiles, are also reviewed.

English Else
Wet Etching in β-Ga2O3 Bulk Single Crystal

Zhu Jin,Yingying Liu,Ning Xia,Xiangwei Guo,Zijian Hong,Hui Zhang,Deren Yang

DOI: https://doi.org/10.1039/d1ce01499d

IF: 3.756

2022-01-01

CrystEngComm

Abstract:Wet etching is a simple and effective method to identify defects, fabricate patterns, and polish wafers of semiconductors. We highlight recent progress in wet etching of β-Ga2O3 substrates with an aim to comprehensively understand the etching behavior and mechanism.
Wet etching in beta-Ga2O3 bulk single crystals

Zhu Jin,Yingying Liu,Ning Xia,Xiangwei Guo,Zijian Hong,Hui Zhang,Deren Yang

DOI: https://doi.org/10.1039/d1ce01499d

IF: 3.756

2022-01-01

CrystEngComm

Abstract:Beta-phase gallium oxide (beta-Ga2O3) bulk single crystals have received increasing attention due to their fantastic performances and widespread use in power devices and solar-blind photodetectors. Wet etching has proved to be a simple and effective approach for visualization of defects, polishing of wafers, and patterning of substrates. Recently, a large number of different strategies have been developed for wet etching of beta-Ga2O3 substrates. Here we review recent advances in wet etching of beta-Ga2O3 substrates with an aim to comprehensively understand the etching behavior and mechanism. We classify wet etching into conventional etching including chemical etching, defect-selective etching, patterning, and chemical mechanical polishing and unconventional etching (i.e., electrochemical and electroless etchings including photo- and/or metal-assisted ones) depending on the input of extra assistance or not. In each category, the key parameters that control the etching kinetics were discussed and a number of examples were highlighted. This review intends to shed light on how to design appropriate etching strategies for various purposes and applications.
Research progress in the postprocessing and application of GaN crystal

Qiubo Li,Jiaoxian Yu,Shouzhi Wang,Guodong Wang,Guangxia Liu,Lei Liu,Shiying Zhang,Xiangang Xu,Lei Zhang

DOI: https://doi.org/10.1039/d2ce01539k

IF: 3.756

2023-01-05

CrystEngComm

Abstract:As a typical representative of the third-generation semiconductor materials, GaN is an ideal substrate for the fabrication of blue-green lasers, RF microwave devices, and power electronic devices. The application of substrate materials cannot be separated from the post-treatment of materials. Although wet etching and thermal annealing are not necessary steps, they have great research value for GaN crystals. This review systematically reviews the importance of wet etching in GaN crystal applications, which can not only characterize the dislocations and study the crystal defects, but can also rapidly remove the damaged layer, improve the grinding and polishing efficiency, and achieve a smooth and non-damaged surface, so as to improve the performance of GaN-based devices. After thermal annealing of the GaN crystal, the surface quality will be improved, stress relaxation will occur, and the photoelectric properties will be significantly improved. Finally, the challenges and opportunities of the wet etching and thermal annealing of GaN crystals are briefly described, and their development prospects are noted.

chemistry, multidisciplinary,crystallography
Light-assisted wet etching of semiconductor nitride GaN

Bei Zhang,Qiyu Huang,Dayong Zhou,Lun Dai,Guoyi Zhang

1998-01-01

Abstract:A new method of light-assisted wet etching of semiconductor nitride GaN has been successfully demonstrated. This etching technique has advantages such as simplicity, and easy to be controlled as well as small damage. The etching rate of GaN as high as 200-600 nm/min is achieved by illuminating a 200 W mercury lamp in combination with the solution of NaOH. The factor dependence of etch rate is investigated. The mechanism of the etching is discussed.
Preparation and Characterization of GaN Micro/nano-Structures by the Electrodeless Photo-Assisted Chemical Etching

张士英,修向前,徐庆君,王恒远,华雪梅,谢自力,刘斌,陈鹏,韩平

DOI: https://doi.org/10.1360/sspma2015-00183

2015-01-01

Abstract:GaN micro/nano-structures of different morphology were successfully preparated by the electrodeless photo-assisted chemical etching in KOH solution, with K2S2O8 as the oxidizing agent. The structure, crystalline quality, stress state and optical property of both normal GaN and etched GaN were provided by the combined results of scanning electron microscopy (SEM) images, cathodoluminescence mapping (CL mapping), high-resolution X-ray diffraction (HRXRD) detection, micro-Raman spectra and photoluminescence (PL), respectively. The results show that pits, micro/ nanopillars and nanowires of high crystalline quality are formed in the high KOH concentrations (1 mol/L) and the low light intensity; GaN pyramid arrays have been fabricated in 0.4 mol/L KOH solution with high UV light intensity, and CL mapping indicates that these pyramids are composed of crystalline GaN surrounding a dislocation; Whiskers can also be obtained in 0.1 mol/L KOH with high UV light intensity after etching. The whiskers are believed to be directly correlated with line-type defects of edge and mixed character. The formation mechanism and the feature of GaN different morphology were rationally explained. And the etching temperature and the polarity of GaN surface have an evident influence on the surface morphology of GaN.
A Systematic Study on Dry Etching Process of Germanium for Ge 3D-Fets Applications

Yanyan Zhang,Ran Cheng,Shun Xu,Rui Zhang,Yixin Zhao

DOI: https://doi.org/10.1109/icsict.2016.7998906

2016-01-01

Abstract:In this study, reactive-ion etching (RIE) of Ge in different ambient was systematically investigated. Several dominant parameters (applied power, gas flow rate and gas compositions) during the etching were considered to improve the profile of 3D Ge structures. Besides, it was experimentally confirmed that to obtain Ge sidewalls with small roughness and a large angle, adding O2 and an appropriate masking material are important. Finally, by optimizing the process parameters, Ge sidewalls with an angle near 80° and smooth surfaces were successfully achieved.
Ohmic Contacts in GaN-based Devices

邵庆辉,叶志镇,黄靖云

DOI: https://doi.org/10.3321/j.issn:1005-023x.2003.03.011

2003-01-01

Abstract:Gallium nitride has become one of the most attractive materials for light emitting devices and high-temperature and high-power devices,due to its superior opto-electronic properties. Ohmic contact is a critical technology for preparing GaN based devices. In this paper,research progress in ohmic contacts in n-GaN and p-GaN is presented emphatically.
GaN Substrate and GaN Homo-Epitaxy for LEDs： Progress and Challenges

Wu Jie-Jun,Wang Kun,Yu Tong-Jun,Zhang Guo-Yi

DOI: https://doi.org/10.1088/1674-1056/24/6/068106

2015-01-01

Chinese Physics B

Abstract:After a brief review on the progresses in GaN substrates by ammonothermal method and Na-flux method and hydride vapor phase epitaxy(HVPE) technology,our research results of growing GaN thick layer by a gas flow-modulated HVPE,removing the GaN layer through an efficient self-separation process from sapphire substrate,and modifying the uniformity of multiple wafer growth are presented.The effects of surface morphology and defect behaviors on the GaN homo-epitaxial growth on free standing substrate are also discussed,and followed by the advances of LEDs on GaN substrates and prospects of their applications in solid state lighting.
Etching of Ga2O3: an important process for device manufacturing

Zhaoying Xi,Zeng Liu,JunPeng Fang,Ang Bian,Shao-Hui Zhang,Jia-Han Zhang,Lei Li,yufeng guo,Weihua Tang

DOI: https://doi.org/10.1088/1361-6463/ad773d

2024-09-05

Journal of Physics D Applied Physics

Abstract:Etching plays a key role in processing and manufacturing electronic and optoelectronic devices. For ultra-wide bandgap semiconductor gallium oxide (Ga2O3), its etching investigations and evolution mechanism are still at the earlier stage, and some more research gumption should be invested. In this review, we make a summary on the etching of Ga2O3, including dry (plasma) etching, wet chemical etching, and photoelectrochemical (PEC) etching, and discuss the etching results, existing problems, and feasible solutions, in order to provide guidance and advises for furtherly developing the Ga2O3 etching and Ga2O3-based electronic and optoelectronic devices.

physics, applied
Wet etching in β-Ga 2 O 3 bulk single crystals

Zhu Jin,Yingying Liu,Ning Xia,Xiangwei Guo,Zijian Hong,Hui Zhang,Deren Yang

DOI: https://doi.org/10.1039/d1ce01499d

IF: 3.756

2022-01-01

CrystEngComm

Abstract:Wet etching is a simple and effective method to identify defects, fabricate patterns, and polish wafers of semiconductors. We highlight recent progress in wet etching of β-Ga 2 O 3 substrates with an aim to comprehensively understand the etching behavior and mechanism.

chemistry, multidisciplinary,crystallography
Chemical Etching of Freestanding N-polar GaN in Control of the Surface Morphology

Hui Chen,Sha Han,Zhenghui Liu,Yumin Zhang,Chunyu Zhang,Zengli Huang,Kebei Chen,Wentao Song,Jianfeng Wang,Gengzhao Xu,Ke Xu

DOI: https://doi.org/10.1016/j.apsusc.2021.152125

IF: 6.7

2022-01-01

Applied Surface Science

Abstract:Surface treatment methods were investigated on freestanding N-polar GaN surfaces with chemical etching methods in H3PO4 and NaOH solutions at room temperature. Two kinds of step-flow structures could be obtained on the surfaces. Merely etching with diluted H3PO4 solutions resulted in straight step-flows towards the off-cut direction of the wafer, while coaxial hexagonal step-flows were formed after a three-step etching scheme with H3PO4, NaOH and H3PO4 in turn. During these procedures, etching with H3PO4 solutions exhibits the ability to sharpen atomic step edges, form flat terraces and remove hexagonal pyramids. On the contrary, NaOH etching will roughen well-defined terraced surfaces and produce hexagonal pyramids.
Etching Damage Analysis and Optimization of Inductively Coupled Plasma Etching of GaN

Teng Long,Yu Zhiguo,Yang Meng,Zhang Rong,Xie Zili,Liu Bin,Chen Peng,Han Ping,Shi Yi

DOI: https://doi.org/10.3969/j.issn.1671-4776.2012.03.008

2012-01-01

Abstract:The process conditions and damages for the inductively coupled plasma(ICP) etching of GaN were systemically studied by varying the ICP power and DC bias in ICP etching process,respectively.The surface morphology and damages of the etched surface were characterized and analyzed by scanning electron microscope(SEM),atomic force microscope(AFM),energy dispersive spectrometer(EDS) and photoluminescence(PL).The experimental results show that the ICP etch rate increases with the increase of the ICP power and DC bias,the etching damage is proportional to the DC bias,while the relationship of the etching damage and ICP power is much more complicated.The significant decline for the intensities of PL band-edge emission and yellow-band emission peak was observed in experiments,which means that the non-radiative recombination center exists in defects produced by etching,and the density of the non-radiative recombination center is proportional to the DC bias.In order to achieve high etch rate and low etch damage,the high ICP power(>450 W) and low DC bias(<300 V) should be used in the ICP etching.
Investigation of Etch Rate Distribution by Micro-hemisphere for the Anisotropic Wet Etching of Ga-Face Gallium Nitride Crystal

Ye Chen,Yan Xing,Xi Lin,Xi Chen,Zaifa Zhou,Qing Chai

DOI: https://doi.org/10.1016/j.jallcom.2024.177429

IF: 6.2

2025-01-01

Journal of Alloys and Compounds

Abstract:The Ga-face gallium nitride (GaN) crystal has recently attracted significant research interest in the micro/nano device due to its exceptional properties. Therefore, exploring low-cost and high-efficiency anisotropic wet etching processes for GaN material is essential. This research investigates the measurement of the overall anisotropic etching rates by introducing a novel micrometer-level hemispherical structure. For the first time, we report the full anisotropic etching rate distribution for Ga-face GaN crystal planes based on the etched results of the micro hemisphere and wagon-wheel structure specimen. The etching experiments were carried out in 85 %wt H₃PO₄ etchant at 130°C and 150°C. The etching result of Ga-face GaN crystal orientations displays a hexagonal symmetry pattern. In addition, the overall etch rates measurement enables the identification of the crystal planes with maximum and minimum etch rates at different temperatures, and the experiment also shows the etch rate of primary crystallographic orientations, such as +c-plane, m-plane, and a-plane. Finally, the atomic structures of GaN crystallographic planes are analyzed to explain the anisotropy in the etching process on different crystal zones by the step-flow mechanism. The resulting etch rate database allows the numerical simulation of the etch front and helps understand the etching mechanism of the GaN crystal.
Characterization of anisotropic wet etching of Gallium Nitride for surface orientations of the crystallographic zone in H 3 P O 4 etchant

Y. Chen,Y. Xing,J.T. Gong,Qi Li,X. Guo

DOI: https://doi.org/10.1016/j.sna.2023.114176

2023-03-01

Abstract:Based on the utilization of numerous wagon-wheel structures fabricated on Gallium Nitride (GaN) (0 0 0 1) substrate, this paper reports the characteristics of the wet etching rate distribution for the GaN< 0001 > crystal zone in H 3 P O 4 etchant with various temperatures (130 ℃, 140 ℃, 150 ℃ and 158 ℃) and different concentrations (85%wt and 75%wt). Owing to the benefits of Focused Ion Beam (FIB), the wagon-wheel structures are manufactured by this technology. The results show that GaN, as a representative of the hexagonal system, exhibit a six-fold symmetrical anisotropy about the c-axis in the < 0001 > crystallographic zone. And compared with the reported GaN etched by AZ400K, the surface roughness and the etch rate fluctuation of GaN etched by H 3 P O 4 are both lower. Meanwhile, for any orientation, the corresponding apparent activation energy in the GaN< 0001 > crystal zone can be calculated by the obtained etch rates at various temperatures. Moreover, the dependence of the etch rate on concentration is investigated in this paper. Finally, against the GaN< 0001 > crystal zone, for purpose of explaining the etching rate anisotropy at the atomic scale, the step flow theory is successfully applied here, which demonstrates that the corresponding wet chemical etching rate model can be established based on this theory.

engineering, electrical & electronic,instruments & instrumentation
Analysis of the n-GaN electrochemical etching process and its mechanism in oxalic acid

Artem Shushanian,Daisuke Iida,Zhe Zhuang,Yu Han,Kazuhiro Ohkawa

DOI: https://doi.org/10.1039/d1ra07992a

IF: 4.036

2022-01-01

RSC Advances

Abstract:We studied the wet electrochemical etching of n-GaN films in oxalic acid. The electrooxidation processes occur in a potentiostatic mode in the voltage range of 5 to 20 V. We described the formation of the porous n-GaN layer structures in several ways. Firstly, we observed the microphotographs of the cross section to characterize the nanostructure. Secondly, we examined the reaction products in a liquid phase using ICP-OES and TOC-TN methods, while vapor-phase products were examined by gas chromatography. Finally, according to the product data analysis, we demonstrate a mechanism for the electrochemical oxidation of n-GaN in oxalic acid, which involves 6 electrons.
The development and applications of nanoporous gallium nitride in optoelectronics: a review

Yuxuan Yao,Yue Liang,Jiabao Guo,Huixin Xiu

DOI: https://doi.org/10.1088/1361-6641/accd14

IF: 2.048

2023-04-16

Semiconductor Science and Technology

Abstract:The development of nanoporous gallium nitride has widened the material properties and applications in third generation semiconductor area. Nanoporous gallium nitride has been used in laser emitters, light-emitting diodes, optical sensors, and optical energy storage devices. In this paper, we reviewed the most recent progress in the nanoporous GaN field by electrochemical etching. The properties of etched GaN have many superior properties compared with original GaN templates, such as stronger photoluminescence intensity, thermal conductivity, piezo-electricity, more accessible area, stress relief and refractive index. These advantages will make GaN more widely used in the field of optics and optoelectronics. Pore formation can be controlled by adjusting the applied potential and etching time. The nanoporous GaN makes the material of GaN have broader application prospects. We introduced in detail the application prospects of different GaN based processes and subsequent application methods in optoelectronics, sensors, and materials themselves. This review will help to improve further development of nanoporous GaN applications.

engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter
Enhancement Mechanism of Chemical Mechanical Polishing for GaN Based on Electro-Fenton Reaction

Zifeng Ni,Shikun Zheng,Guomei Chen,Qiang Fan,Xin Zhang,Haitao Zhang,Junjie Li,Da Bian,Shanhua Qian

DOI: https://doi.org/10.1149/2162-8777/acb736

IF: 2.2

2023-01-31

ECS Journal of Solid State Science and Technology

Abstract:In order to obtain a high material removal rate (MRR) with good surface quality, the electro-Fenton reaction was used to assist the chemical mechanical polishing (CMP) for the gallium nitride (GaN) substrate. The fluorospectrophotometry, potentiodynamic polarization method and X-ray photoelectron spectroscopy (XPS) were applied to analyze the enhancement mechanism of the CMP of GaN assisted by electro-Fenton reaction. The results revealed that the hydroxyl radical (·OH) concentration in the electro-Fenton solution increased by 41.75%, and the corrosion potential decreased by 24.67% compared with the Fenton solution, which proved that the electro-Fenton solution had strong corrosion characteristics and the gallium oxide (Ga 2 O 3 ) formation rate on the wafer surface was accelerated. A high MRR of 274.45 nm/h with surface roughness (Ra) of 0.88 nm was obtained by electro-Fenton solution. The reduction reaction of the electric field increased the conversion rate of iron (Fe2+) and ferrous ions (Fe3+) effectively and promoted the decomposition of the H2O2 solution. Meanwhile, the oxidation reaction on the GaN wafer surface was enhanced, and high processing efficiency was achieved. Furthermore, the electric field generated a small amount of H2O2, which increased the ·OH concentration and improved the oxidation characteristics of the solution.

materials science, multidisciplinary,physics, applied
Electrochemical etching of highly conductive GaN single crystals

G. Nowak,X.H. Xia,J.J. Kelly,J.L. Weyher,S. Porowski

DOI: https://doi.org/10.1016/S0022-0248(00)00988-X

IF: 1.8

2001-01-01

Journal of Crystal Growth

Abstract:It is shown that the (0001) Ga-polar surface of highly doped GaN single crystals can be etched anodically in the dark in dilute aqueous KOH solution. Two etching regimes involving electron tunneling and avalanche breakdown are defined. The electrochemistry and surface morphology encountered in each regime are described. Possible applications of anodic etching are considered.

Research and Progress of Wet Etching for GaN

Application of Wet Chemical Etching in GaN-based Materials

Wet etching of GaN, AlN, and SiC: a review

Wet Etching in β-Ga2O3 Bulk Single Crystal

Wet etching in beta-Ga2O3 bulk single crystals

Research progress in the postprocessing and application of GaN crystal

Light-assisted wet etching of semiconductor nitride GaN

Preparation and Characterization of GaN Micro/nano-Structures by the Electrodeless Photo-Assisted Chemical Etching

A Systematic Study on Dry Etching Process of Germanium for Ge 3D-Fets Applications

Ohmic Contacts in GaN-based Devices

GaN Substrate and GaN Homo-Epitaxy for LEDs： Progress and Challenges

Etching of Ga2O3: an important process for device manufacturing

Wet etching in β-Ga 2 O 3 bulk single crystals

Chemical Etching of Freestanding N-polar GaN in Control of the Surface Morphology

Etching Damage Analysis and Optimization of Inductively Coupled Plasma Etching of GaN

Investigation of Etch Rate Distribution by Micro-hemisphere for the Anisotropic Wet Etching of Ga-Face Gallium Nitride Crystal

Characterization of anisotropic wet etching of Gallium Nitride for surface orientations of the crystallographic zone in H 3 P O 4 etchant

Analysis of the n-GaN electrochemical etching process and its mechanism in oxalic acid

The development and applications of nanoporous gallium nitride in optoelectronics: a review

Enhancement Mechanism of Chemical Mechanical Polishing for GaN Based on Electro-Fenton Reaction

Electrochemical etching of highly conductive GaN single crystals