Abstract:The concept of memory that can only be read but cannot be changed seems strange at first. In reality, it is found that it has great application potential, such as the processor with a fixed purpose, the initial set value of the microprocessor BIOS, and these data are stored in Programmable Read-Only Memory (PROM) to quickly realize system functions. The PROM storage content is fixed, greatly simplifying his design. The radiation of space particles is the main factor causing the failure of the electronic system of spacecraft. The PROM storage array of the space electronic system is the most basic guarantee for the normal operation of the electronic system. The chip adopts domestic 130 nm standard technology of Complementary Metal Oxide Semiconductor (CMOS), Muller-C digital filter is used in the peripheral subsystem of PROM storage array, and the core cell uses Dual Interlocked Cell (DICE) and ring gate and other radiation hardening technologies to design a 32Kx8bit radiation resistant asynchronous programmable PROM. Pre-silicon of devices was verified by Technology Computer Aided Design (TCAD), and post silicon radiation verification was completed through radiation experiment. The post silicon radiation experiment showed that the total ionizing Dose (TID) capacity of the PROM chip was ≥100 Krad (Si), the critical value of single event upset (SEU) was ≥37.1 MeV·cm 2 /mg, the critical value of single event latch up was ≥98 MeV·cm 2 /mg, meeting the life requirements of the initial value storage of aerospace electronic systems. These performances ensure the reliable operation of the space electronic system after restart.

Test and Verification of 0.13 μm SOI Standard Cell Library Total-Dose Radiation Hardened

Total Ionizing Dose Effect and Single Event Burnout of VDMOS with Different Inter Layer Dielectric and Passivation.

Radiation-hardened Library Cell Template and Its Total Ionizing Dose (TID) Delay Characterization in 65nm CMOS Process

A PD-SOI Based DTI-LOCOS Combined Cross Isolation Technique for Minimizing TID Radiation Induced Leakage in High Density Memory

Total Dose Radiation Experiments In Cmos/Soi 4kb Sram

Including the effects of process-related variability on radiation response using a new test chip

Total Ionizing Dose Hardness Analysis of Transistors in Radiation-Hardened 0.18μm BCD Technology

Investigation of Radiation Hardening by Back-Channel Adjustment in PDSOI MOSFETs

Gamma Irradiation Induced Total Dose Effects of EE80C196KC20 Single Chip Microprocessor

TID-Induced OFF-State Leakage Current in Partially Radiation-Hardened SOI LDMOS

Design of Standard Cell for Anti-radiation

Characterization of Single Event Effect in a Radiation Hardened Programmable Read-Only Memory in a 130 nm Bulk CMOS Technology

Hot Carrier Reliability of Radiation Hardened T-gate PD SOI NMOSFET after TID Radiation

Primary Total Ionizing Dose Effect Studies on Xilinx SoC Irradiated with 60co Γ Rays

Total Ionizing Dose Effects on a Radiation-Hardened CMOS Image Sensor Demonstrator for ITER Remote Handling

Total Dose Radiation-Hard 0.8μm SOI CMOS Transistors and ASIC

Total Ionizing Dose Effect and Radiation Hardness Analysis on Low-Leakage ESD Devices Fabricated on Double SOI Technology

Novel Void Embedded Design for Total Ionizing Dose Hardening of Silicon-on-Insulator MOSFET

Total Dose Effects with High Dose Rate in NMOS Transistors

Ionizing Radiation Testing System for Emerging Semiconductor Materials and Devices

The Total Ionizing Dose Response of a DSOI 4kb SRAM