Analysis of Silicon Bonding Technics Based on Laser Interferometry

MA Bin,CHEN Ming-xiang,ZHANG Hong-hai,LIU Sheng,WANG Xue-fang
DOI: https://doi.org/10.3969/j.issn.1003-353x.2005.10.008
2005-01-01
Abstract:The warpage of bonded silicon surface was measured with laser interferometry. The surface quality distribution statistics was made. The bonding techniques were compared, and the proceeding parameters were optimized, so the surface properties were ensured.
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