Technology to Form Multiple-dielectric-layer L-shaped Sidewall

金海岩,高玉芝,冯国进,莫邦燹,张利春
DOI: https://doi.org/10.3969/j.issn.1000-3819.2001.01.012
2001-01-01
Abstract:This paper introduces the technology to formmultiple-dielectric-layer L-shaped sidewall between emitter and base. It has been proven that this technology can be easily controlled and high rate of products and good uniformity have been achieved. This technology has been applied to the double-layer polysilicon bipolar transistor process and excellent transistor performance has been obtained.
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