Abstract:Quasi-one-dimensional (1D) semiconducting nanowires (NWs), with excellent electrostatic control capability, are widely regarded as advantageous channels for the fabrication of high-performance microelectronics, memories, and sensors. For example, the latest Si field-effect-transistor (FET) technology nodes, < N5 nm, use horizontally-stacked SiNWs or nanosheet channels in a gate-all-around (GAA) configuration. However, further scaling of the top-down etching fabrication is reaching physical limits, necessitating the development of new fabrication or integration technologies in monolithic three dimensional (3D) architecture to push Moore's law forward. These new capabilities are also critical, for implementing of more advanced non von Neumann paradigms of in-memory and neuromorphic computing. For this, a versatile and highly controllable low-temperature growth integration of orderly 1D SiNW channels is desired, as it will provide an alternative or complementary new route to fabricate a multilayer of Si CMOS logics/memories in a fully 3D stacked manner. In this study, we assess the evolution and recent progress of catalytic growth strategies for ultrathin 1D channels in-plane or planar NWs, and revisit the key mechanisms and technological milestones in geometry, lattice quality, line-shape, position, and composition controls. We aim to eventually establish a reliable catalytic growth integration strategy, suitable for the fabrication of GAA FETs and the implementation of a monolithic 3D integration architecture. Finally, we also present a summary and perspectives on the current challenges and future opportunities of monolithic growth integration of NW electronics in 3D architecture.

3D Electronics: 3D Sidewall Integration of Ultrahigh‐Density Silicon Nanowires for Stacked Channel Electronics (adv. Electron. Mater. 7/2019)

3D Sidewall Integration of Ultrahigh‐Density Silicon Nanowires for Stacked Channel Electronics

Monolithic Three‐dimensional Integration of Aligned Carbon Nanotube Transistors for High‐performance Integrated Circuits

Facile 3D Integration of Si Nanowires on Bosch-etched Sidewalls for Stacked Channel Transistors

Ultra-Confined Catalytic Growth Integration of Sub-10 Nm 3D Stacked Silicon Nanowires Via a Self-Delimited Droplet Formation Strategy.

Toward monolithic growth integration of nanowire electronics in 3D architecture: a review

Unprecedented Uniform 3D Growth Integration of 10-Layer Stacked Si Nanowires on Tightly Confined Sidewall Grooves

Ultra‐Confined Catalytic Growth Integration of Sub‐10 Nm 3D Stacked Silicon Nanowires Via a Self‐Delimited Droplet Formation Strategy (small 42/2022)

Converging-guiding-track Design Enables 100% Growth Deployment Rate of Ultrathin Monocrystalline Silicon Nanowire Channels

Nanotube and Nanowire Transistors

3-D matrix nano-wire transistor fabrication on silicon substrate

III&#x2013;V 4D Transistors

Optimizing Ultra‐thin 2D Transistors for Monolithic 3D Integration: A Study on Directly Grown Nanocrystalline Interconnects and Buried Contacts

Monolithic three-dimensional integration of complementary two-dimensional field-effect transistors

High-fidelity Moulding Growth and Cross-section Shaping of Ultrathin Monocrystalline Silicon Nanowires

Terrace-confined guided growth of high-density ultrathin silicon nanowire array for large area electronics

New structure transistors for advanced technology node CMOS ICs

Vertically Integrated, Three-Dimensional Nanowire Complementary Metal-Oxide-Semiconductor Circuits

Three-dimensional Vertical ZnO Transistors with Suspended Top Electrodes Fabricated by Focused Ion Beam Technology

Sub-10 nm Nanopattern Architecture for 2D Material Field-Effect Transistors

Monolithic 3-D Self-Aligned Heterogeneous Nanosheet Channel Complementary FETs With Matched $\textit{V}_{\text{T}}$ by Band Alignments of Individual Channels