Abstract:Bipolar junction transistors (BJTs) are generally employed in spacecraft, due to their current drive capability, linearity and excellent matching characteristics. High-energy particles and cosmic rays in space environment remarkably affect electronic devices, especially in BJTs producing total ionizing dose, displacement damage or single event effect. Among them, ionizing irradiation effects on BJTs dominates. For BJTs, ionization damage can induce the oxide trapped charges in SiO2 layer and interface traps in Si/SiO2, resulting in more recombination base current and the degradation of current gain. Consequently, the accumulation of both oxide charges and interface traps causes an increase in the base current. Passivation layer is also an important factor of the irradiation effects of BJTs. Previous works only studied the degradation of electrical properties of the devices with/without passivation layer induced by irradiation, and did not give an influence mechanisms of passivation layer on the irradiation respond of devices. Therefore, the irradiation damage mechanisms of the BJTs with or without nitride passivation layer are not clear so far. In this paper, the impact of Si3N4 passivation layer on ionizing irradiation damage on lateral PNP bipolar transistors (LPNP) was studied by using Co-60 gamma irradiation source. The KEITHLEY 4200-SCS semiconductor parameter analyzer was used to measure the relationship between the electrical properties of LPNP transistors and ionization dose, including the Gummel characteristics, the degradation of current gain, etc. The irradiation defects of the LPNP transistors with/without passivation layer structure were analyzed by the deep level transient spectroscopy (DLTS). The experimental results show that the electrical properties of the LPNP transistors with and without passivation layer exhibit similar characteristics. For all samples, the base current increases with increasing the total dose, while the collector current does not almost change. Compared with the LPNP transistors without Si3N4 passivation layer, the degradation of LPNP transistor with Si3N4 passivation layer is severe. Based on the excess base current as a function of base-emitter voltage for the LPNP transistors with/without nitride passivation layer, the degradation of bipolar transistors with nitride passivation layer is severe under the same irradiation conditions. The DLTS analyses show that compared with the bipolar transistors without nitride passivation layer, the signal peak located at about 300 K is shifted to low temperature for the bipolar transistors with nitride passivation layer. The above results show that the LPNP transistors with nitride passivation could produce a large number of interface states with the energy level is closer to the middle of the forbidden band during the irradiation, which is attributed to a large number of hydrogen presence during the processing of fabricated passivation layer.

Ionization damage behavior of gate controlled lateral PNP(GLPNP) transistors in H2 environment

Hydrogen Soaking, Displacement Damage Effects, and Charge Yield in Gated Lateral Bipolar Junction Transistors

Effect of H2 on Interface Traps in the LPNP Transistors Caused by 3 MeV Proton Irradiations

Effect of Hydrogen Poisoning on P-Gate AlGaN/GaN HEMTs

Effect of Hydrogen on Radiation-Induced Displacement Damage in AlGaN/GaN HEMTs

Hydrogen Soaking Irradiation Acceleration Method: Application to and Damage Mechanism Analysis on 3DG111 Transistors

The Effect of Ionization and Displacement Damage on Minority Carrier Lifetime

Study on the Hydrogen Effect and Interface/Border Traps of a Depletion-Mode AlGaN/GaN High-Electron-Mobility Transistor with a SiNx Gate Dielectric at Different Temperatures

Effect of Electric Field on Radiation Defects in NPN Transistors

Effect of Protons Located at Different Region in SiO2 Layer on GLPNP Transistors Degradation

Effect of heavy ion radiation on low frequency noise of AlGaN/GaN high electron mobility transistors

The Effect of Ionization Damage on Displacement Damage in AlGaN/GaN HEMTs

The Study of Displacement Damage in AlGaN/GaN High Electron Mobility Transistors Based on Experiment and Simulation Method

Influence of LDD Spacers and H+Transport on the Total-Ionizing-Dose Response of 65-Nm MOSFETs Irradiated to Ultrahigh Doses

Total ionizing dose effects in passivated and unpassivated AlGaN/GaN HEMTs

Effects of Ionization and Displacement Damage in AlGaN/GaN HEMT Devices Caused by Various Heavy Ions

Evolution of Ionization-Induced Defects in GLPNP Bipolar Transistors at Different Temperatures

The Influence of Deep-Level Defects With Various Depths in SiO<sub>2</sub> on Ionizing Damage

Impact of nitride passivation layer on ionizing irradiation damage on LPNP bipolar transistors

Synergistic Effects of NPN Transistors Caused by Combined Proton Irradiations with Different Energies

Degradation Mechanisms of Gate Leakage in GaN-Based HEMTs at Low Dose Rate Irradiation