Abstract:AlGaN/GaN High Election Mobility Transistor (HEMT), due to its excellent electrical performance and strong radiation resistance, has important application prospects in satellite communications, radar, nuclear reactors and other extreme environments. Heavy ion radiation mainly causes single-event effect and displacement damage effect in AlGaN/GaN HEMT devices. In this paper, the displacement damage defects introduced by heavy ion radiation are analyzed in detail. With the increase of heavy ion radiation influence, more defects are introduced by displacement damage. These defects reduce the 2DEG concentration through carrier capture and removal effect, and reduce the carrier mobility through scattering mechanism, resulting in gradual degradation of the electrical characteristics of the device. In this paper, AlGaN/GaN high electron mobility transistors irradiated by 181 Ta 32+ with fluence of 1×10 8 ions/cm 2 、1×10 9 ions/cm 2 and 1×10 10 ions/cm 2 are used to measure the electrical characteristics, EMMI and low-frequency noise characteristics of the device before and after heavy ion radiation. The results show that heavy ion radiation can lead to the degradation of electrical parameters. When the heavy ion radiation dose reaches 1×10 10 ions/cm 2 , the electrical characteristics of the device deteriorate seriously, the threshold voltage shifts forward by 25%, and the drain saturation current deteriorates obviously. The defect locations introduced by irradiation were analyzed by EMMI test, and it was found that the number of "hot spots" increased significantly after the injection of heavy ion radiation of 1×10 10 ions/cm 2 , indicating that radiation leads to the increase of defect density and serious damage to the device. Through the noise test, it is found that with the increase of the radiation fluence, the current noise power spectral density gradually increases. When the fluence reached 1×10 10 ions/cm 2 , the defect density increased to 3.19×10 18 cm -3 eV -1 , and the Hooge parameter increased after heavy ion radiation. We believe that radiation leads to increased defect density and parasitic series resistance of AlGaN/GaN HEMT devices, resulting in larger Hooge parameters. Through the function of the normalized power spectral density of the drain current noise and the bias voltage, it is found that the defects caused by heavy ion radiation will cause the parasitic series resistance to increase.

Gate dielectric layer mitigated device degradation of AlGaN/GaN-based devices under proton irradiation

Proton-Irradiation Effects and Reliability on GaN-Based MIS-HEMTs

A thorough study on the electrical performance change and trap evolution of AlGaN/GaN MIS-HEMTs under proton irradiation

Effect of Double Insulators on the Performance Improvement of 3-MeV Proton-Irradiated AlGaN/GaN MIS-HEMTs

Strain Effect on the Performance of Proton-Irradiated GaN-based HEMT

Influence of Electrical Field on the Susceptibility of Gallium Nitride Transistors to Proton Irradiation

Degradation of Electrical Performance and Radiation Damage Mechanism of Cascode GaN HEMT with 80 MeV Proton

Worst-Case Bias for Proton and 10-keV X-Ray Irradiation of AlGaN/GaN HEMTs

Proton Irradiation Effects on Dual Delta-Doped AlGaAs/InGaAs/AlGaAs Pseudomorphic High-Electron-Mobility Transistors

Total ionizing dose effects in passivated and unpassivated AlGaN/GaN HEMTs

1/F Noise in As-Processed and Proton-Irradiated Algan/Gan Hemts Due to Carrier Number Fluctuations

Comprehensive Research of Total Ionizing Dose Effects in GaN-Based MIS-HEMTs Using Extremely Thin Gate Dielectric Layer

Trap-induced Electrical Degradation in Edge-Termination-hardened NiO/β-Ga2O3 Heterojunction under 10 MeV Fluence-Dependent Proton Irradiations

The effects and mechanisms of 2 MeV proton irradiation on InP-based high electron mobility transistors

Gate Bias and Length Dependences of Total Ionizing Dose Effects in InGaAs FinFETs on Bulk Si

Study of High-Energy Proton Irradiation Effects in Top-Gate Graphene Field-Effect Transistors

Study on the Hydrogen Effect and Interface/Border Traps of a Depletion-Mode AlGaN/GaN High-Electron-Mobility Transistor with a SiNx Gate Dielectric at Different Temperatures

Effect of heavy ion radiation on low frequency noise of AlGaN/GaN high electron mobility transistors

Gate-first Process Compatible, High-Quality in Situ SiNx for Surface Passivation and Gate Dielectrics in AlGaN/GaN MISHEMTs

Heavy-Ion Radiation Effects in AlGaN/GaN High Electron Mobility Transistors

Effect of Hydrogen Poisoning on P-Gate AlGaN/GaN HEMTs