Abstract:A self-referenced temperature sensor with a time-domain readout and a two-step improvement on output dynamic range is presented in this paper. The proposed temperature sensor utilizes BJTs to generate temperature dependent/independent currents, which are converted to digital bits using a ring-oscillator-based time-domain readout scheme. A novel two-step improvement on output dynamic range is proposed to improve the power-efficiency and simplify the hardware design with a high conversion rate. Furthermore, the adopted process compensation strategy and the self-referenced readout scheme make the whole temperature sensor robust to process and supply variations. Fabricated in a standard 0.13-mu m CMOS process, the proposed temperature sensor occupies a die area of 0.06 mm(2) and consumes 9.92 nJ per conversion at a conversion rate of 75 kSa/s. After one-point calibration at 20 degrees C, the sensor achieves inaccuracies of -2.88 degrees C/+2.71 degrees C and -1.7 degrees C/1.36 degrees C from -20 degrees C to 100 degrees C, with and without systematic nonlinearity removal, respectively. It shows an average supply sensitivity of 0.0136 degrees C/mV from 1.05 V to 1.4 V without any external reference clock or voltage regulators.

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Type of CMOS temperature sensor

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A novel low power wide supply voltage range CMOS temperature sensor with 0.2/0.5°C error from -20°C to 60°C