Abstract:Quantum dot based infrared (IR) photodetectors (QDIPs) have the potential to provide meaningful advances to the next generation of imaging systems due to their sensitivity to normal incidence radiation, large optical gain, low dark currents, and high operating temperature. SiGe-based QDIPs are of particular interest as they are compatible with silicon integration technology but suffer from the low absorption coefficient and hence small photoresponse in the mid-wavelength IR region. Here, we report on the plasmonic enhanced Ge/Si QDIPs with tailorable wavelength optical response and polarization selectivity. Ge/Si heterostructures with self-assembled Ge quantum dots are monolithically integrated with periodic two-dimensional arrays of subwavelength holes (2DHAs) perforated in gold films to convert the incident electromagnetic IR radiation into the surface plasmon polariton (SPP) waves. The resonant responsivity of the plasmonic detector at a wavelength of 5.4 μm shows an enhancement of up to thirty times over a narrow spectral bandwidth (FWHM = 0.3 μm), demonstrating the potentiality of this approach for the realization of high-performance Ge/Si QDIPs that require high spectral resolution. The possibility of the polarization-sensitive detection in Ge/Si QDIPs enhanced with a stretched-lattice 2DHA is reported. The excitation of SPP modes and the near-field components are investigated with the three-dimensional finite-element frequency-domain method. The role that plasmonic electric field plays in QDIP enhancement is discussed.

Study of Si-Based Multilayer Ge Quantum Dots Near-Infrared Photodetector

Si-based Ge Quantum Dot Infrared Photodetectors

Study Of Self-Assembled Ge Quantum Dot Infrared Photodetectors

GaAs/AlGaAs Quantum-Well Infrared Photodetectors on GaAs-on-Si Substrates

Ge Quantum Dot Infrared Photo-Detector

Photo Detection and Modulation from 1,550 to 2,000 Nm Realized by a GeSn/Ge Multiple-Quantum-well Photodiode on a 300-Mm Si Substrate

Optical study of Ge quantum dots and infrared photodetectors

Self-power, Multiwavelength Photodetector Based on Sn-doped Ge Quantum Dots / Hexagonal Silicon Nanowires Heterostructures

Si-Based Ge Quantum Dot Infrared Photodetectors with Si_3N_4 as Anti-Reflection Coating

A SiGe/Si Nanostructure with Graphene Absorbent for Long Wavelength Infrared Detection

Germanium Quantum Dot Infrared Photodetectors Addressed by Self-Aligned Silicon Nanowire Electrodes.

High-efficiency GeSn/Ge Multiple-Quantum-well Photodetectors with Photon-Trapping Microstructures Operating at 2 Μm.

Submonolayer quantum dot quantum cascade long-wave infrared photodetector grown on Ge substrate

High-Efficiency Photo Detection at 2 Μm Realized by GeSn/Ge Multiple-Quantum-Well Photodetectors with Photon-Trapping Microstructure

Photoelectric Properties of Si-Si1-Xgex-Ge Heterostructures for Infrared Detector

Optical properties of Ge/Si quantum dot superlattices

Vertical field enhanced nanostructure for quantum well infrared photodetector through Germanium subwavelength arrays

Low-noise, high-detectivity, polarization-sensitive, room-temperature infrared photodetectors based on Ge quantum dot-decorated Si-on-insulator nanowire field-effect transistors

High-Performance CsPbI3 Quantum Dot Photodetector with a Vertical Structure Based on the Frenkel-Poole Emission Effect

Plasmon polariton enhanced mid-infrared photodetectors based on Ge quantum dots in Si

Colloidal InSb Quantum Dots/Organic Integrated Bulk Heterojunction for Fast and Sensitive Near‐Infrared Photodetectors