Abstract:SiC layer was prepared in an industrial scale spout fluidized bed by chemical vapor deposition. The density of SiC coating was about 3.18 g/cm(3). High temperature oxidation experiments were carried out at different temperatures from 800 to 1600 degrees C. The microstructure and composition were characterized using different methods, including mass change weighing, XRD, EDS and SEM. It was found that the weight gain of SiC coating layer was not obvious below 1200 degrees C, and subsequent mass gain gradually increased with increasing temperature, reaching 10% at 1600 degrees C. High-magnification SEM results show that the oxidation began from the surface and gradually formed punctate distribution of the oxide. Small crystal structure (similar to micron) of the SiC surface was very clear at 1000 degrees C, and this crystal structure disappeared gradually at high temperatures, forming oxides of Si in the SiC surface. There was a stacking fault stress due to the different thermal expansion coefficients and elastic modulus of SiC and Si oxides, leading to the gradual formation of cracks around the punctates. With increasing temperature, the crack further increased the oxidation rate of SiC, and finally the formed Si oxides layer fell off from the particles. It can be seen clearly that the layer was peeling when the temperature was increased to 1400 degrees C. Increasing the temperature to 1600 degrees C, the SiC coating was oxidized completely into a honeycomb structure, with obvious sintering of SiC. XRD analysis shows that there was a growing SiO2 peaks from 1400 degrees C, indicating that surface oxidation was significant. EDS results shows that the oxygen content in the coating surface gradually increased with increasing temperature. Semi-quantitative analysis shows that the surface was close to SiO2 at 1600 degrees C.

DEFECTS FORMATION MECHANISM AND CONTROL OF SiC COATINGS BY CHEMICAL VAPOR DEPOSITION

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