Abstract:GaN on Si plays an important role in the integration and promotion of GaN-based wide-gap materials with Si-based integrated circuits (IC) technology. A series of GaN film materials were grown on Si (111) substrate using a unique plasma assistant molecular beam epitaxy (PA-MBE) technology and investigated using multiple characterization techniques of Nomarski microscopy (NM), high-resolution X-ray diffraction (HR-XRD), variable angular spectroscopic ellipsometry (VASE), Raman scattering, photoluminescence (PL), and synchrotron radiation (SR) near-edge X-ray absorption fine structure (NEXAFS) spectroscopy. NM confirmed crack-free wurtzite (w-) GaN thin films in a large range of 180–1500 nm. XRD identified the w- single crystalline structure for these GaN films with the orientation along the c-axis in the normal growth direction. An optimized 700 °C growth temperature, plus other corresponding parameters, was obtained for the PA-MBE growth of GaN on Si, exhibiting strong PL emission, narrow/strong Raman phonon modes, XRD w-GaN peaks, and high crystalline perfection. VASE studies identified this set of MBE-grown GaN/Si as having very low Urbach energy of about 18 meV. UV (325 nm)-excited Raman spectra of GaN/Si samples exhibited the GaN E2(low) and E2(high) phonon modes clearly without Raman features from the Si substrate, overcoming the difficulties from visible (532 nm) Raman measurements with strong Si Raman features overwhelming the GaN signals. The combined UV excitation Raman–PL spectra revealed multiple LO phonons spread over the GaN fundamental band edge emission PL band due to the outgoing resonance effect. Calculation of the UV Raman spectra determined the carrier concentrations with excellent values. Angular-dependent NEXAFS on Ga K-edge revealed the significant anisotropy of the conduction band of w-GaN and identified the NEXAFS resonances corresponding to different final states in the hexagonal GaN films on Si. Comparative GaN material properties are investigated in depth.

Study of lateral growth regions in ammonothermal c-plane GaN

Study of Stress in Ammonothermal Non-Polar and Semi-Polar GaN Crystal Grown on HVPE GaN Seeds

Growth behavior of ammonothermal GaN crystals grown on non-polar and semi-polar HVPE GaN seeds

Characterization of Crystal Lattice Constant and Dislocation Density of Crack-Free GaN Films Grown on Si(1 1 1)

Spatial Variation of Electrical Properties in Lateral Epitaxially Overgrown Gan

Growth behavior of GaN film along non-polar [11–20] directions

Growth of Single-Crystalline GaN Films on Ga-Free Langasite-Type Crystals by Metal-Organic Chemical Vapor Deposition

X-ray Diffraction, Photoluminescence and Secondary Ion Mass Spectroscopy Study of GaN Films Grown on Si(111) Substrate by Vacuum Reactive Evaporation

Growth Behavior and Stress Distribution of Bulk GaN Grown by Na-flux with HVPE GaN Seed under Near-Thermodynamic Equilibrium

X-ray Characterization of GaN Single Crystal Layers Grown by the Ammonothermal Technique on HVPE GaN Seeds and by the Sublimation Technique on Sapphire Seeds

Optical, Structural, and Synchrotron X-ray Absorption Studies for GaN Thin Films Grown on Si by Molecular Beam Epitaxy

The growth and characterization of GaN grown on an Al2O3 coated (0 0 1) Si substrate by metalorganic vapor phase epitaxy

Growth Behaviors of GaN on Stripes of Patterned c-Plane GaN Substrate

Investigation on the origin of crystallographic tilt in lateral epitaxial overgrown GaN using selective etching

Modulation of Anisotropic Crystalline in A-Plane GaN on HT-AlN Buffer Layer

The Growth and Characterization of GaN Films on Cone-Shaped Patterned Sapphire by MOCVD

A Study of Gan Regrowth on the Micro-Faceted Gan Template Formed by in Situ Hcl Etching

The Effect of Lateral Growth of Self-Assembled GaN Microdisks on UV Lasing Action

TEM Analysis on GaN/AlGaN SLS

Molecular dynamics simulations and experimental studies on low-temperature growth of GaN

Quantitative analysis of lattice plane microstructure in the growth direction of a modified Na-flux GaN crystal using nanobeam X-ray diffraction