Gate Tunable Memtransistor Based on Monolayer Molybdenum Disulfide

Meng Yan,Fang Wang,Jiaqiang Shen,Xichao Di,Xin Lin,Huanhuan Di,Wei Mi,Kailiang Zhang
DOI: https://doi.org/10.1109/cstic49141.2020.9282520
2020-01-01
Abstract:As a typical representative of two-dimensional (2D) materials, recently Mos 2 was considered as the candidate to the development of electronic synaptic devices due to its ultrathin thickness and special properties. However, dual-terminal artificial synapse devices still exit the challenges about the simulation of biological synapses, which is hard for two-terminal devices to update and read the synaptic weight at the same time. In this work, Mos 2 films were grown by chemical vapor deposition (the sample's largest single triangular size is about 83μm), and three-terminal synaptic devices based on back-gate FETs on Si/SiO 2 substrate were fabricated. MoS 2 sample's morphology and device's structure were characterized by Raman spectroscopy and optical microscope (OM). The memtransistor has excellent resistive switching (RS) behavior. By optimizing the pulse, the memtransistor showed a better conductivity linearity, and typical synaptic characteristics were mimicked, such as short-term/long-term plasticity (STP/LTP), excitatory post-synaptic current (EPSC)/inhibitory post-synaptic current (IPSC) and paired-pulse facilitation (PPF).
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