Simulation of Optical and Electrical Synaptic Functions in MoS2/α-In2Se3 Heterojunction Memtransistors

Tao Xiang,Fengxiang Chen,Xiaoli Li,Xiaodong Wang,Yuling Yan,Lisheng Wang
DOI: https://doi.org/10.1088/1674-1056/acee58
2023-01-01
Chinese Physics B
Abstract:Memtransistors combine memristors and field-effect transistors, which can introduce multi-port control and have significant applications for enriching storage methods. In this paper, multilayer α-In 2 Se 3 and MoS 2 were transferred to the substrate by the mechanical exfoliation method, then a heterojunction MoS 2 /α-In 2 Se 3 memtransistor was prepared. Neural synaptic simulations were performed using electrical and optical pulses as input signals. Through measurements, such as excitatory/inhibitory post-synaptic current (EPSC/IPSC), long-term potentiation/depression (LTP/LTD), and paired-pulse facilitation/depression (PPF/PPD), it can be found that the fabricated device could simulate various functions of neural synapses well, and could work as an electronic synapse in artificial neural networks, proposing a possible solution for neuromorphic storage and computation.
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