Abstract:Scalable 2D planar memristors based on monolayer ReS2/WS2 van der Waals heterostructure are fabricated. The devices show superior nonvolatile memristive properties and simulated synaptic functions. Both the electrical and optical modulations on the resistance states and programming voltage are realized. The resistance switching behavior and electrical and optical controllability are attributed to the unique optoelectronic properties and interlayer interaction of the heterostructure. Memristors with nonvolatile storage performance and simulated synaptic functions are regarded as one of the critical devices to overcome the bottleneck in traditional von Neumann computer architecture. 2D van der Waals heterostructures have paved a new way for the development of advanced memristors by integrating the intriguing features of different materials and offering additional controllability over their optoelectronic properties. Herein, planar memristors with both electrical and optical tunability based on ReS2/WS2 van der Waals heterostructure are demonstrated. The devices show unique unipolar nonvolatile behavior with high Roff/Ron ratio of up to 106, desirable endurance, and retention, which are superior to pure ReS2 and WS2 devices. When decreasing the channel length, the set voltage can be notably reduced while the high Roff/Ron ratios are retained. By introducing electrostatic doping through the gate control, the set voltage can be tailored in a wide range from 4.50 to 0.40 V. Furthermore, biological synaptic functions and plasticity, including spike rate‐dependent plasticity and paired‐pulse facilitation, are successfully realized. By employing optical illumination, resistive switching can also be modulated, which is dependent on the illumination energy and power. A mechanism related to the interlayer charge transfer controlled by optical excitation is revealed.

Gate-tunable memristors from monolayer MoS2

Memristors with Tunable Characteristics Based on the Tellurene/nb-Doped MoS2 Heterojunction Toward Bio-Realistic Synaptic Emulation

Gate-tunable Memristive Phenonmena Mediated by Grain Boundaries in Single Layer MoS2

Gate Tunable Memtransistor Based on Monolayer Molybdenum Disulfide

Multi-Terminal Memtransistors from Polycrystalline Monolayer MoS2

Electric and Light Dual-Gate Tunable MoS2 Memtransistor

Memristive Dendritic Device with a Chemical Vapor-Deposited Monolayer MoS 2 Film

Nonvolatile Resistive Switching in Nanocrystalline Molybdenum Disulfide with Ion-Based Plasticity

Novel continuously-tunable memristor based on few-layers black phosphorus/MoS2 heterojunction

MoS2 Field-Effect Transistors with Lead Zirconate-Titanate Ferroelectric Gating

Fabricating Molybdenum Disulfide Memristors

Controllable Resistive Switching in ReS2/WS2 Heterostructure for Nonvolatile Memory and Synaptic Simulation

Strain Engineering for High-Performance Phase Change Memristors

Controlling sulfurization of 2D Mo 2 C crystal for Mo 2 C/MoS 2 -based memristor and artificial synapse

Controlling Sulfurization of 2D Mo2C Crystal for Mo2C/MoS2-based Memristor and Artificial Synapse

A Synaptic Transistor Based on Monolayer Monocrystalline‐MoS2 for Neuromorphic Applications

Organic Heterojunction Memristors with Enhanced Tunable Resistive States for Artificial Synapses

Thermally Assisted Nonvolatile Memory in Monolayer MoS2 Transistors

Molecular Approach to Electrochemically Switchable Monolayer MoS2 Transistors

Gate‐Tunable and Multidirection‐Switchable Memristive Phenomena in a Van Der Waals Ferroelectric

Reliability Improvement and Effective Switching Layer Model of Thin‐Film MoS2 Memristors