Abstract:Herein, an electronic device is developed by simply integrating the MoS2/CuInP2S6 transistor and memristor to realize the functionality of a comparator. The device works as a field‐effect transistor and exhibits n‐type conductance under a low‐level input, while it works as a memristive transistor and exhibits p‐type conductance under a high‐level input. Moreover, the device can extend the photodetection from visible to near‐infrared with the responsivity of 321 A W−1 and specific detectivity of 4.6 × 1010 Jones at 1200 nm wavelength. Developing multifunctional nanoelectronics will facilitate simplifying the circuits for future high‐integrated system. CuInP2S6 (CIPS) exhibiting ferroionic phenomena allows the manipulation of polarization and conductive behaviors. Here, a MoS2 transistor is fabricated with CIPS gate dielectric layer to realize the functions of nonvolatile memory, broadband photodetector and voltage comparator. It exhibited convex‐shaped anti‐ambipolar transfer characteristics, with a sharp boundary as the n‐/p‐type conductance conversion line, guiding the precise modulation of its working modes by tuning voltage. The CIPS works as a ferroelectric insulator to support the n‐type transistor, while as a semiconductor dominated by Cu+ migration to reconfigure a p‐type memristive transistor. It owns hysteresis behavior in both modes, demonstrating the n‐ and p‐type memory windows synchronously. Also, it exhibits the nonvolatile memory property with low energy‐consumption of 4 pJ per bite, good endurance of 2567 write‐erase cycles, and good retention with a high current on/off ratio of 2 × 103 over 104 s without any obvious decay. Moreover, it extends the photodetection from visible to near‐infrared with the responsivity of 321 AW−1 at 1200 nm wavelength. This work provides an effective strategy for the realization of multiple functions by specific materials and devices.

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