Abstract:In the post-Moore's Law era, there is a growing trend towards the development of advanced electronic devices that combine sensory perception, data storage, and computation for various applications. Two-dimensional semiconductor transistors, which utilize charge storage mechanisms, present a promising avenue for future information devices. Here, we introduce a neuromorphic triboelectric charge-trapping MoTe 2 transistor with stacked high- k dielectric structure, aiming to facilitate mechano-driven logic-in-memory for neuromorphic computation. By gating through triboelectric potential, the device demonstrates superior electrical performance, including an impressive switching ratio (>10 5 ), minimal off-state current (~0.6 pA), and robust cyclic stability. By modulating the trapped charges in the stack gate structure via tribopotential modulation, the conductivity state of the MoTe 2 channel can be readily controlled, realizing an exceptional mechano-driven nonvolatile memory with a retention time of up to 10 4 seconds, consistent switching behavior over 100 cycles, and multi-level data storage capabilities at 8 levels. Furthermore, a mechano-driven programmable inverter can be achieved by connecting a load resistor in series. The triboelectric charge-trapping transistor also possesses the capacity to emulate typical synaptic characteristics at low energy levels (~147 fJ). Leveraging the finely tunable conductivity through tribopotential, we demonstrate a mechano-assisted artificial neural network capable of recognizing handwritten digits with an accuracy rate of approximately 88.59%. These findings underscore the significant potential of the triboelectric charge-trapping transistor in mechanical-assisted real-time interaction, energy-efficient data storage, and neuromorphic computing.

Triboiontronic Transistor of MoS2

Fiber-Shaped Triboiontronic Electrochemical Transistor

Strain-Gated Field Effect Transistor of a MoS2-ZnO 2D-1D Hybrid-Structure.

Triboelectric Potential Powered High-Performance Organic Transistor Array

Mechano-Driven Logic-in-Memory with Neuromorphic Triboelectric Charge-Trapping Transistor

Triboiontronics for efficient energy and information flow

Triboelectric-potential Configurable MoTe 2 Homojunction for Photovoltaic Device and Logic Circuits

Tribotronic Vertical Field‐Effect Transistor Based on van der Waals Heterostructures

MoS$_2$ Dual-gate Transistors with Electrostatically Doped Contacts

MoS2 Dual-Gate Transistors with Electrostatically Doped Contacts

Multifunctional MoS2 Transistors with Electrolyte Gel Gating.

Triboiontronics with temporal control of electrical double layer formation

Evolution Application of Two-Dimensional MoS2-Based Field-Effect Transistors

MoS2transistors gated by ferroelectric HfZrO2with MoS2/mica heterojunction interface

Molecular Approach to Electrochemically Switchable Monolayer MoS2 Transistors

Junctionless Electric-Double-Layer MoS2 Field-Effect Transistor with a Sub-5 nm Thick Electrostatically Highly Doped Channel

Novel Field-Effect Schottky Barrier Transistors Based on Graphene-MoS2 Heterojunctions

Ultra-Steep-Slope High-Gain MoS2 Transistors with Atomic Threshold-Switching Gate

Toward High-mobility and Low-power 2D MoS2 Field-effect Transistors

Wafer-scale Transferred Multilayer MoS2 for High Performance Field Effect Transistors

Realizing Wafer‐Scale and Low‐Voltage Operation MoS2 Transistors Via Electrolyte Gating