Abstract:Artificial synapse networks capable of massively parallel computing and mimicking biological neural networks can potentially improve the processing efficiency of existing information technologies. Semiconductor devices functioning as excitatory and inhibitory synapses are crucial for developing intelligence systems, such as traffic control systems. However, achieving reconfigurability between two working modes (inhibitory and excitatory) and bilingual synaptic behavior in a single transistor remains challenging. This study successfully mimics a bilingual synaptic response using an artificial synapse based on an ambipolar floating gate memory comprising tungsten selenide (WSe2)/hexagonal boron nitride (h-BN)/ molybdenum telluride (MoTe2). In this WSe2/h-BN/MoTe2 structure, ambipolar semiconductors WSe2 and MoTe2 are inserted as channel and floating gates, respectively, and h-BN serves as the tunneling barrier layer. Using either positive or negative pulse amplitude modulations at the control gate, this device with bipolar channel conduction produced eight distinct resistance states. Based on this, we experimentally projected that we could achieve 490 memory states (210 hole-resistance states + 280 electron-resistance states). Using the bipolar charge transport and multistorage states of WSe2/h-BN/MoTe2 floating gate memory, we mimicked reconfigurable excitatory and inhibitory synaptic plasticity in a single device. Furthermore, the convolution neural network formed by these synaptic devices can recognize handwritten digits with an accuracy of >92%. This study identifies the unique properties of heterostructure devices based on two-dimensional materials as well as predicts their applicability in advanced recognition of neuromorphic computing.

Tunable synaptic devices based on ambipolar MoTe<sub>2</sub> transistor

Memristors with Tunable Characteristics Based on the Tellurene/nb-Doped MoS2 Heterojunction Toward Bio-Realistic Synaptic Emulation

Carbon Nanotube-Based Flexible Ferroelectric Synaptic Transistors for Neuromorphic Computing

Tailoring Neuroplasticity in Flexible Perovskite QDs-based Optoelectronic Synaptic Transistors by Dual Modes Modulation

Bio-inspired artificial heterosynapse based on carbon nanotubes memtransistor with dynamically tunable analog switching behavior

MoS2-based Charge-trapping Synaptic Device with Electrical and Optical Modulated Conductance

Optically Stimulated Synaptic Devices Based on the Hybrid Structure of Silicon Nanomembrane and Perovskite.

An electronic synapse based on tantalum oxide material

An Artificial Electrical-Chemical Mixed Synapse Based on Ion-Gated MoS 2 Nanosheets for Real-Time Facilitation Index Tuning

Reconfigurable Artificial Synapse Based on Ambipolar Floating Gate Memory

Realization of Tunable Artificial Synapse Through Ambipolar Charge Trapping in Organic Transistor with Pentacene/poly(α-Methylstyrene) Architecture

A MoS2/PTCDA Hybrid Heterojunction Synapse with Efficient Photoelectric Dual Modulation and Versatility

Floating-gate Photosensitive Synaptic Transistors with Tunable Functions for Neuromorphic Computing

MoS 2 Synaptic Transistor with Tunable Weight Profile

A hybrid ambipolar synaptic transistor emulating multiplexed neurotransmission for motivation control and experience-dependent learning

A synapse with low power consumption based on MoTe 2 /SnS 2 heterostructure

A Photoelectric-Stimulated MoS2 Transistor for Neuromorphic Engineering

Artificial Synapse Based on a 2D-SnO 2 Memtransistor with Dynamically Tunable Analog Switching for Neuromorphic Computing

Artificial Neurons and Synapses Based on Al/a-SiNxOy:H/P+-Si Device with Tunable Resistive Switching from Threshold to Memory

2D Mos2 Neuromorphic Devices for Brain-Like Computational Systems

Field-driven modulating of In-Sn-O synaptic transistors with a precisely controlled weight update