Abstract:The features of eight-period In 0.2 Ga 0.8 N/GaN quantum wells (QWs) with silicon (Si) doping in the first two to five quantum barriers (QBs) in the growth sequence of blue light-emitting diodes (LEDs) are explored. Epilayers of QWs’ structures are grown on 20 pairs of In 0.02 Ga 0.98 N/GaN superlattice acting as strain relief layers (SRLs) on patterned sapphire substrates (PSSs) by a low-pressure metal-organic chemical vapor deposition (LP-MOCVD) system. Temperature-dependent photoluminescence (PL) spectra, current versus voltage ( I - V ) curves, light output power versus injection current ( L - I ) curves, and images of high-resolution transmission electron microscopy (HRTEM) of epilayers are measured. The consequences show that QWs with four Si-doped QBs have larger carrier localization energy (41 meV), lower turn-on (3.27 V) and breakdown (− 6.77 V) voltages, and higher output power of light of blue LEDs at higher injection current than other samples. Low barrier height of QBs in a four-Si-doped QB sample results in soft confinement potential of QWs and lower turn-on and breakdown voltages of the diode. HRTEM images give the evidence that this sample has relatively diffusive interfaces of QWs. Uniform spread of carriers among eight QWs and superior localization of carriers in each well are responsible for the enhancement of light output power, in particular, for high injection current in the four-Si-doped QB sample. The results demonstrate that four QBs of eight In 0.2 Ga 0.8 N/GaN QWs with Si doping not only reduce the quantum-confined Stark effect (QCSE) but also improve the distribution and localization of carriers in QWs for better optical performance of blue LEDs.

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Improvement of Blue Llight-Ight-ight-eeemitting Mitting Ddiodes Iodes with an Undoped Graded Layer As the Electrons Tunneling Barrier Layer

The Influences of Sputtered AlN Buffer Layer on AlInGaN Based Blue and Near‐ultraviolet Light Emitting Diodes

Performance Improvement of AlGaN-based Deep-Ultraviolet Light-Emitting Diodes Via Si-doping Design of Quantum Barriers

Optimal Silicon Doping Layers of Quantum Barriers in the Growth Sequence Forming Soft Confinement Potential of Eight-Period In0.2Ga0.8N/GaN Quantum Wells of Blue LEDs

Influence of Si-doping in the Barriers on Optical and Electrical Properties of InGaN/GaN MQW LEDs

On the integrated p-type region free of electron blocking layer for AlGaN-based deep-ultraviolet light emitting diodes

Progress in efficient doping of Al-rich AlGaN

229 nm UV LEDs using p-type silicon for increased hole injection

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Electrical Characteristics of Ingan/Algan and Ingan/Gan Mqw Near Uv-Leds

Reverse Leakage Current Characteristics of GaN/InGaN Multiple Quantum-Wells Blue and Green Light-Emitting Diodes

Effect Of An Indium-Doped Barrier On Enhanced Near-Ultraviolet Emission From Ingan/Algan: In Multiple Quantum Wells Grown On Si(111)

Enhanced Performance of N-polar AlGaN-based Deep-Ultraviolet Light-Emitting Diodes.

High Hole Injection for Nitrogen-Polarity AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes

Enhancing the Performance of GaN-Based Light-Emitting Diodes by Incorporating a Junction-Type Last Quantum Barrier

Band Gap Renormalization and Carrier Localization Effects in InGaN∕GaN Quantum-Wells Light Emitting Diodes with Si Doped Barriers

Performance Improvement of InGaN LEDs by Using Strain Compensated Last Quantum Barrier and Electron Blocking Layer

Implementation of electron restriction layer in n-AlGaN toward balanced carrier distribution in deep ultraviolet light-emitting-diodes

The effect of different AlGaN insertion layer thicknesses on the photoelectric properties of InGaN/AlGaN near UV light emitting diodes

Experimentally Study Electron Overflow from Quantum Wells into P-Side GaN and Its Effect on the Efficiency Droop in InGaN/GaN Blue-Light-emitting-diodes