Abstract:The effects of the p-AlGaN electron blocking layer (EBL) thickness on the performance of InGaN/GaN multiple quantum wells (MQWs) green light emitting diodes (LEDs) was investigated. It was observed that increasing the thickness of the p-AlGaN EBL could reduce the leakage current and improve the efficiency of green LEDs with large V-pits. It is proposed that increasing the EBL thickness leads to a thicker p-AlGaN on the sidewalls of V-pits, which provides a thicker energy barrier and consequently screens dislocations more effectively. The leakage current (at -5 V) of LEDs with a 40 nm EBL is about an order of magnitude lower than that of LEDs with a 20 nm EBL. With the increase in EBL thickness, at low current densities, the external quantum efficiency (EQE) firstly decreases and then increases afterwards, which could be attributed to the competition between the enhancement of the radiative recombination rate and the reduction of the hole injection efficiency. At operating current density, there is a positive correlation between EQE and the thickness of the EBL. This is attributed to the improved electron confinement in the active region by preventing electrons overflowing to the p-type layer. Meanwhile, the efficiency droop is obviously suppressed when the thickness of the EBL increases from 20 nm to 40 nm. However, further increasing the thickness of the EBL may deteriorate the EQE and efficiency droop. Packaged green LED chips with an optimized EBL emit 260 mW (dominant wavelength: 520 nm) at 350 mA (35 A cm(-2)), and the EQE reaches 31.2%.

Electrical Characteristics of Ingan/Algan and Ingan/Gan Mqw Near Uv-Leds

Performance Improvement of Gan-Based Near-Uv Leds with Ingan/Algan Superlattices Strain Relief Layer and Algan Barrier

Effects of P-Algan Ebl Thickness on the Performance of Ingan Green Leds with Large V-Pits

Different Degradation Behaviors of Ingan/Gan Mqws Blue and Violet Leds

Growth and Device Characteristics of Nano-Folding Ingan/Gan Multiple Quantum Well Led

Structural and optical properties of violet InGaN/AlInGaN light-emitting diodes grown by MOCVD

Effect Of An Indium-Doped Barrier On Enhanced Near-Ultraviolet Emission From Ingan/Algan: In Multiple Quantum Wells Grown On Si(111)

Comparison of Temperature Dependent Electroluminescence of InGaN/GaN and AlGaInP Based LEDs

Enhancement of Light-Emission Efficiency of Ultraviolet InGaN/GaN Multiple Quantum Well Light Emitting Diode with InGaN Underlying Layer

High-efficiency Near-Uv Light-Emitting Diodes on Si Substrates with InGaN/GaN/AlGaN/GaN Multiple Quantum Wells

Electroluminescence From The Sidewall Quantum Wells In The V-Shaped Pits Of Ingan Light Emitting Diodes

Growth of high-quality near-ultraviolet light-emitting diodes used InGaN/GaN multiple quantum wells

Improving Performance of Algan‐Based Deep‐Ultraviolet Light‐Emitting Diodes by Inserting a Higher Al‐Content Algan Layer Within the Multiple Quantum Wells

Emissions of the InGaN/GaN MQW LEDs with the InGaN well layer grown at different temperatures

Effect of P-Gan Layer on the Properties of Ingan/Gan Green Light-Emitting Diodes

Enhanced Performance of N-polar AlGaN-based Deep-Ultraviolet Light-Emitting Diodes.

Luminescence Degradation of Ingan/Gan Violet Leds

Optical Properties of Nanopillar AlGaN/GaN MQWs for Ultraviolet Light-Emitting Diodes.

Improvement of Electrostatic Discharge Characteristics of InGaN/GaN MQWs Light-Emitting Diodes by Inserting an N+-Ingan Electron Injection Layer and a P-Ingan/gan Hole Injection Layer

Thermal behavior of AlGaN-based deep-UV LEDs

AlGaN-Based Multiple Quantum Well Deep Ultraviolet Light-Emitting Diodes with Polarization Doping