Abstract:Injection current dependences of electroluminescence transition energy in blue InGaN/GaN multiple quantum wells light emitting diodes (LEDs) with different quantum barrier thicknesses under pulsed current conditions have been analyzed taking into account the related effects including deformation caused by lattice strain, quantum confined Stark effects due to polarization field partly screened by carriers, band gap renormalization, Stokes-like shift due to compositional fluctuations which are supposed to be random alloy fluctuations in the sub-nanometer scale, band filling effect (Burstein-Moss shift), and quantum levels in finite triangular wells. The bandgap renormalization and band filling effect occurring at high concentrations oppose one another, however, the renormalization effect dominates in the concentration range studied, since the band filling effect arising from the filling in the tail states in the valence band of quantum wells is much smaller than the case in the bulk materials. In order to correlate the carrier densities with current densities, the nonradiative recombination rates were deduced experimentally by curve-fitting to the external quantum efficiencies. The transition energies in LEDs both with 15 nm quantum barriers and 5 nm quantum barriers, calculated using full strengths of theoretical macroscopic polarization given by Barnardini and Fiorentini [Phys. Status Solidi B 216, 391 (1999)] are in excellent accordance with experimental results. The LED with 5 nm barriers has been shown to exhibit a higher transition energy and a smaller blue shift than those of LED with 15 nm barriers, which is mainly caused by the smaller internal polarization field in the quantum wells.

Luminescence Degradation of Ingan/Gan Violet Leds

Different Degradation Behaviors of Ingan/Gan Mqws Blue and Violet Leds

Degradation Behaviors of High Power Gan-Based Blue Light Emitting Diodes

Investigation of InGaN/GaN Laser Degradation Based on Luminescence Properties

Degradation of Ingan/Gan Leds under Forward-Bias Operations in Salty Water Vapor

Injection Current Dependences of Electroluminescence Transition Energy in Ingan/Gan Multiple Quantum Wells Light Emitting Diodes under Pulsed Current Conditions (vol 118, 033101, 2015)

Performance Enhancement of Ingan-Based Light-Emitting Diodes with Ingan/Alinn/Ingan Composition-Graded Barriers

The Electroluminescence Spectra of InGaN/GaN Blue LEDs During Aging Ti Me

Degradation mechanism beyond device self-heating in high power light-emitting diodes

Electrical Characteristics of Ingan/Algan and Ingan/Gan Mqw Near Uv-Leds

Quantum Efficiency Enhancement of a GaN-Based Green Light-Emitting Diode by a Graded Indium Composition p-Type InGaN Layer

Influence of Polarization Effect on the Luminescence Properties of InGaN-Based LEDs

Deep-Ultraviolet Emission from an Ingaas Semiconductor Laser

Study on Luminescence Performance of GaN-based μLEDs under High Injection Level

Performance Improvement of Gan-Based Near-Uv Leds with Ingan/Algan Superlattices Strain Relief Layer and Algan Barrier

Degradation of InGaN/GaN Quantum Well UV LEDs Caused by Short-Term Exposure to Current

Properties of Ingan Violet-Led Structure

Indium-Induced Effect on Polarized Electroluminescence from InGaN/GaN MQWs Light Emitting Diodes

Optical Study of InGaN Materials with Different Indium Content

InGaN multiple quantum well based light-emitting diodes with indium composition gradient InGaN quantum barriers

Power-Dependent Optical Characterization of the InGaN/GaN-Based Micro-Light-Emitting-Diode (LED) in High Spatial Resolution