Influence of Si-doping in the Barriers on Optical and Electrical Properties of InGaN/GaN MQW LEDs

Wang Lai,Luo Yi,Han Yanjun,Li Hongtao

DOI: https://doi.org/10.1109/inow.2008.4634535

2008-01-01

Abstract:InGaN/GaN MQW LEDs grown by MOCVD with undoped and Si-doped barriers were investigated. It is found that the electrical characteristics are influenced intensively by the diffusion and compensation of Si and Mg dopants.

What problem does this paper attempt to address?

Band Gap Renormalization and Carrier Localization Effects in InGaN∕GaN Quantum-Wells Light Emitting Diodes with Si Doped Barriers

YJ Wang,SJ Xu,Q Li,DG Zhao,H Yang

DOI: https://doi.org/10.1063/1.2168035

IF: 4

2006-01-01

Applied Physics Letters

Abstract:The optical properties of two kinds of InGaN∕GaN quantum-wells light emitting diodes, one of which was doped with Si in barriers while the other was not, are comparatively investigated using time-integrated photoluminescence and time-resolved photoluminescence techniques. The results clearly demonstrate the coexistence of the band gap renormalization and phase-space filling effect in the structures with Si doped barriers. It is surprisingly found that photogenerated carriers in the intentionally undoped structures decay nonexponentially, whereas carriers in the Si doped ones exhibit a well exponential time evolution. A new model developed by O. Rubel, S. D. Baranovskii, K. Hantke, J. D. Heber, J. Koch, P. Thomas, J. M. Marshall, W. Stolz, and W. H. Rühle [J. Optoelectron. Adv. Mater. 7, 115 (2005)] was used to simulate the decay curves of the photogenerated carriers in both structures, which enables us to determine the localization length of the photogenerated carriers in the structures. It is found that the Si doping in the barriers not only leads to remarkable many-body effects but also significantly affects the carrier recombination dynamics in InGaN∕GaN layered heterostructures.
Optimal Silicon Doping Layers of Quantum Barriers in the Growth Sequence Forming Soft Confinement Potential of Eight-Period In0.2Ga0.8N/GaN Quantum Wells of Blue LEDs

Hsiang-Chen Wang,Meng-Chu Chen,Yen-Sheng Lin,Ming-Yen Lu,Kuang-I Lin,Yung-Chen Cheng

DOI: https://doi.org/10.1186/s11671-017-2359-3

2017-01-01

Nanoscale Research Letters

Abstract:The features of eight-period In 0.2 Ga 0.8 N/GaN quantum wells (QWs) with silicon (Si) doping in the first two to five quantum barriers (QBs) in the growth sequence of blue light-emitting diodes (LEDs) are explored. Epilayers of QWs’ structures are grown on 20 pairs of In 0.02 Ga 0.98 N/GaN superlattice acting as strain relief layers (SRLs) on patterned sapphire substrates (PSSs) by a low-pressure metal-organic chemical vapor deposition (LP-MOCVD) system. Temperature-dependent photoluminescence (PL) spectra, current versus voltage ( I - V ) curves, light output power versus injection current ( L - I ) curves, and images of high-resolution transmission electron microscopy (HRTEM) of epilayers are measured. The consequences show that QWs with four Si-doped QBs have larger carrier localization energy (41 meV), lower turn-on (3.27 V) and breakdown (− 6.77 V) voltages, and higher output power of light of blue LEDs at higher injection current than other samples. Low barrier height of QBs in a four-Si-doped QB sample results in soft confinement potential of QWs and lower turn-on and breakdown voltages of the diode. HRTEM images give the evidence that this sample has relatively diffusive interfaces of QWs. Uniform spread of carriers among eight QWs and superior localization of carriers in each well are responsible for the enhancement of light output power, in particular, for high injection current in the four-Si-doped QB sample. The results demonstrate that four QBs of eight In 0.2 Ga 0.8 N/GaN QWs with Si doping not only reduce the quantum-confined Stark effect (QCSE) but also improve the distribution and localization of carriers in QWs for better optical performance of blue LEDs.
Influence of Si Doping on Optical Characteristics of Cubic Gan Grown on (001) Gaas Substrates

Zq Li,H Chen,Hf Liu,L Wan,Mh Zhang,Q Huang,Jm Zhou,N Yang,K Tao,Yj Han,Y Luo

DOI: https://doi.org/10.1063/1.126774

IF: 4

2000-01-01

Applied Physics Letters

Abstract:The photoluminescence (PL) properties of Si-doped cubic GaN with different carrier concentrations were investigated at room temperature. The epilayers were grown on GaAs (001) by radio-frequency molecular-beam epitaxy. It was found that when the carrier concentration is increased from 5×1015 to 2×1018 cm−3, the PL peak shifted towards low energy, from 3.246 to 3.227 eV, and the PL linewidth increased from 77.1 to 121 meV. The PL peak shift is explained by the band gap narrowing effect due to the high doping concentration. The PL linewidth includes two parts: one is doping concentration independent, which is caused by the imperfection of samples and phonon scattering; the other is doping concentration dependent. We assign the second part to the broadening by the microscopic fluctuation of the doping concentration. The experimental measurements are in good agreement with the model.
Influence of structure and doping concentration of AlxGa1-xN/GaN double quantum wells on wavelength and absorption coefficient of intersubband transitions

Lei Shuang-Ying,Bo Shen,Zhang Guo-Yi

DOI: https://doi.org/10.7498/aps.57.2386

2008-01-01

Abstract:By solving the Schrdinger and Poisson equations self-consistently, the central barrier height, central barrier width, well width, and doping concentration in the barriers of symmetric Al_ 0.75 Ga_ 0.25 N/GaN double quantum wells (DQWs) have been studied to investigate their influences on the wavelength and absorption coefficient of intersubband transitions (ISBTs). A smaller wavelength of the ISBT between the first odd and the second even order subbands (S_ 1odd -S_ 2even ISBT) in Al_ 0.75 Ga_ 0.25 N/GaN DQWs and a larger absorption coefficient of the S_ 1odd -S_ 2even ISBT were obtained with decreased central barrier height, when the central barrier height was larger than 0.62 eV. The wavelength of the S_ 1odd -S_ 2even ISBT decreases, and the absorption coefficient of the S_ 1odd -S_ 2even ISBT increases, when the width of the central barrier is reduced. On the other hand, decreasing the width of the well will result in smaller wavelength of the S_ 1odd -S_ 2even ISBT and larger absorption coefficient of the S_ 1odd -S_ 2even ISBT when the width of the well is narrower than 1.9 nm. When doping concentration in the barriers is smaller than 10~ 18 /cm~3, the wavelength of the S_ 1odd -S_ 2even ISBT is unchanged, while the absorption coefficient of the S_ 1odd -S_ 2even ISBT increases with the doping concentration. These results provide useful guidance for realization of ultrafast two-color optoelectronic devices operating in the optical communication wavelength range.
Performance Improvement of AlGaN-based Deep-Ultraviolet Light-Emitting Diodes Via Si-doping Design of Quantum Barriers

Lin Lu,Zhi Wan,FuJun Xu,XinQiang Wang,Chen Lv,Ming Jiang,QiGong Chen

DOI: https://doi.org/10.1016/j.spmi.2017.05.054

IF: 3.22

2017-01-01

Superlattices and Microstructures

Abstract:Characteristics of AlGaN-based deep-ultraviolet (DUV) light-emitting diodes (LEDs) with light-emitting wavelength around 265 nm by adopting different Si-doping design of the last quantum barrier (LQB) have been investigated. Simulation approach yields a result that, the light output power (LOP) and internal quantum efficiency (IQE) of sample with the completely undoped LQB are both improved compared to cases of fully doping and step-doping of the LQB structures. The key factors for the performance improvement are decrease of average electric field strength within the last quantum well layer and increase of the effective barrier height for electrons, and thereby reducing the leakage of electrons and then improving the radiative recombination rates, which suggests that keeping the LQB undoped is of great potential for design and application of high-efficiency AlGaN-based DUV LEDs. (C) 2017 Elsevier Ltd. All rights reserved.
Effect Of An Indium-Doped Barrier On Enhanced Near-Ultraviolet Emission From Ingan/Algan: In Multiple Quantum Wells Grown On Si(111)

Jiejun Wu,Guoyi Zhang,Xianglin Liu,Qinsheng Zhu,Zhanguo Wang,Quanjie Jia,Liping Guo

DOI: https://doi.org/10.1088/0957-4484/18/1/015402

IF: 3.5

2007-01-01

Nanotechnology

Abstract:Low indium content InGaN/AlGaN multiple quantum wells (MQWs) have been grown on Si(111) substrate by metal-organic chemical vapour deposition (MOCVD). A new method of using an isoelectronic indium-doped AlGaN barrier has been found to be very effective in improving the crystalline quality and interfacial abruptness of InGaN quantum well layers. We grew five periods of In0.06Ga0.94N/Al0.20Ga0.80N:In MQWs with In-doped barrier layers and obtained strong near-ultraviolet (UV) emission (similar to 400 nm) at room temperature. An In-doped AlGaN barrier improves the room-temperature PL intensity of InGaN/AlGaN MQWs, making it a candidate barrier for a near-UV source on Si substrate.
Effect of Mg-doping Adjacent to Active Region on the Efficiency of InGaN Blue MQW LED

Lai Wang,Luo, Yi,Jiaxing Wang,Hongtao Li

DOI: https://doi.org/10.1109/inow.2007.4302916

2007-01-01

Abstract:The effect of Mg-doping adjacent to active region on the efficiency of InGaN blue MQW LED was investigated. The tunneling recombination and the Mg diffusion models were used to explain the optimized Mg concentration.
Research on AlInGaN quaternary alloys as MQW barriers in GaN-based laser diodes

Wei-Hua Chen,Hui Liao,Xiao-Dong Hu,Rui Li,Quan-Jie Jia,Yuan-Hao Jin,Wei-Min Du,Zhi-Jian Yang,Guo-Yi Zhang

DOI: https://doi.org/10.3964/j.issn.1000-0593(2009)06-1441-04

2009-01-01

Spectroscopy and spectral analysis

Abstract:InGaN/GaN, InGaN/InGaN and InGaN/AlInGaN multi-quantum-well (MQW) laser diodes (LDs) were grown on (0001) sapphire substrate by metalorganic chemical vapor deposition (MOCVD). The GaN (0002) synchrotron X-ray diffraction (XRD), electroluminescence (EL) and optical power-current (L-I) measurement reveal that AlInGaN quaternary alloys as barriers in MQWs can improve the crystal quality, optical emission performance, threshold current and slope efficiency of the laser diode structure to a large extent compared with other barriers. The relevant mechanisms are that: 1. The Al component increases the barrier height of the MQWs so that more current carriers will be caught in. 2. The In component counteracts the strain in the MQWs that decreases the dislocations and defects, thereby the nonradiative recombination centers are decreased. 3. The In component decreases the piezoelectric electric field that makes the electrons and the holes recombine more easily.
Optimization Design of Quantum Barrier of InGaN Quantum Well in Blue Light-Emitting Diode

李为军,张波,徐文兰

DOI: https://doi.org/10.3969/j.issn.1007-2780.2008.06.001

2008-01-01

Abstract:The performance and optical properties of the blue-LEDs with different quantum barriers were investigated with a self-consistent APSYS simulation program.Specially,in the simulation,built-in polarization with different quantum barriers as well as under the polarized effect energy diagram,distribution of carriers concentration,radiative recombination rate and SRH recombination rate were studied and compared.The results suggest the uniform distribution of carrier's concentration induced by polarized electron is the most important factors for the improvement of blue-LED performance.The phenomena for the performance deterioration of the device with a lattice-matched quaternary Al0.02In0.1Ga0.88N quantum barrier under the high current were found and explained,and the optimized method was put forward.
The Influence of InGaN Interlayer on the Performance of InGaN/GaN Quantum-Well-Based LEDs at High Injections

Kamran Rajabi,Cao Wen-Yu,Shen Tihan,Ji Qing-Bin,He Juan,Yang Wei,Li Lei,Wang Qi,Hu Xiao-Dong

DOI: https://doi.org/10.1088/0256-307x/32/2/027802

2015-01-01

Abstract:Introducing a thin InGaN interlayer with a relatively lower indium content between the quantum well (QW) and barrier results in a step-like InxGa1-xN/GaN potential barrier on one side of the QW. This change in the active region leads to a significant shift in photoluminescence (PL) and electroluminescence (EL) emissions to a longer wavelength compared with the conventional QW based light-emitting diodes. More importantly, an improvement against efficiency droop and an enhancement in light output power at the high-current injection are observed in the modified light-emitting diode structures. The role of the inserted layer in these improvements is investigated by simulation in detail, which shows that the creation of more sublevels in the valence band and the increase of hole concentration inside QWs are the main reasons for these improvements.
Effect of P–n Junction Location on Characteristics of InGaN/GaN Multiple-Quantum-Well Light-Emitting Diodes

Lai Wang,Hongtao Li,Guangyi Xi,Yang Jiang,Wei Zhao,Yanjun Han,Yi Luo

DOI: https://doi.org/10.1143/jjap.47.7101

IF: 1.5

2008-01-01

Japanese Journal of Applied Physics

Abstract:InGaN/GaN multiple-quantum-well (MQW) light-emitting diodes (LEDs) with different p–n junction locations have been investigated by current–voltage (I–V), electroluminescence (EL), and capacitance–voltage (C–V) measurements. At 20 mA injection current, the operating voltage of the LEDs decreases by 0.15 V, the EL intensity increases by 14% and the EL wavelength shifts from 465 to 455 nm owing to the shortening of the distance between n-InGaN/GaN MQW and p-type materials. C–V measurements indicate that only the quantum well immediately adjacent to the p-type region still remains inside the depletion region when LEDs are forward biased. Analysis reveals that the characteristics of the LEDs can be improved by optimizing the p–n junction location through the improvement of the holes' tunneling injection and weakening of the piezoelectric field in InGaN quantum wells.
Effects of InGaN Barriers with Low Indium Content on Internal Quantum Efficiency of Blue InGaN Multiple Quantum Wells

Wang Lai,Wang Jia-Xing,Zhao Wei,Zou Xiang,Luo Yi

DOI: https://doi.org/10.1088/1674-1056/19/7/076803

2010-01-01

Abstract:Blue In0.2 Ga0.8N multiple quantum wells （MQWs） with Inx Ga1xN （x=0.01 0.04） barriers are grown by metal organic vapour phase epitaxy.The internal quantum efficiencies （IQEs） of these MQWs are studied in a way of temperature-dependent photoluminescence spectra.Furthermore,a 2-channel Arrhenius model is used to analyse the nonradiative recombination centres （NRCs）.It is found that by adopting the InGaN barrier beneath the lowest well,it is possible to reduce the strain hence the NRCs in InGaN MQWs.By optimizing the thickness and the indium content of the InGaN barriers,the IQEs of InGaN/InGaN MQWs can be increased by about 2.5 times compared with conventional InGaN/GaN MQWs.On the other hand,the incorporation of indium atoms into the intermediate barriers between adjacent wells does not improve IQE obviously.In addition,the indium content of the intermediate barriers should match with that of the lowest barrier to avoid relaxation.
The Study on the Droop Effect in the InGaN/AlGaInN MQWs with Lattice-Matched AlGaN/InGaN Superlattices Barrier by Highly Excited Photoluminescence Measurement

Fulong Jiang,Yaying Liu,Menghan Liu,Ningze Zhuo,Peng Gao,Huajie Fang,Peng Chen,Bin Liu,Xiangqian Xiu,Zili Xie,Ping Han,Yi Shi,Rong Zhang,Youdou Zheng

DOI: https://doi.org/10.1109/jphot.2018.2820692

IF: 2.4

2018-01-01

IEEE Photonics Journal

Abstract:We have fabricated the InGaN/AlGaInN multiple quantum wells with lattice-matched AlGaN/InGaN superlattices barriers (SL-MQWs). The lattice-matched superlattices promote the formation of the high-quality MQWs and eliminate the large polarization electric field. Highly excited photoluminescence measurement is performed by Ti-sapphire pulse laser with the maximal carrier density of 10(20) cm(-3). Under such high carrier density, the conventional InGaN/GaN MQWs (C-MQWs) have an additional nonradiative loss of carriers and suffer from the efficiency droop effect, while slight droop behavior is observed in the SL-MQWs sample. The results show that the substitution of AlGaN/InGaN superlattices as quantum barriers can effectively suppress the droop behavior at highly excited condition.
Performance enhancement of InGaN/GaN MQWs grown on SiC substrate with sputtered AlN nucleation layer

Ying Zhao,Shengrui Xu,Ruoshi Peng,Jinjuan Du,Xiaomeng Fan,Hongchang Tao,Jincheng Zhang,Jinfeng Zhang,Lansheng Feng,Yue Hao

DOI: https://doi.org/10.1016/j.matlet.2021.129783

IF: 3

2021-07-01

Materials Letters

Abstract:InGaN/GaN multiple quantum wells (MQWs) based light-emitting diode (LED) structures grown on silicon carbide (SiC) substrates with and without sputtered AlN nucleation layer (NL) were investigated. High resolution X-ray diffraction rocking curve results indicated an improvement of GaN crystalline quality by using sputtered AlN NL. The surface morphology improvement of the LED structures was characterized by atomic force microscope and the root-mean-square roughness decreased from 14.1 nm to 2.1 nm by using sputtered AlN NL. The obvious enhancement of luminescence property was identified by photoluminescence and cathode luminescence spectra. These results pave the way for potential applications in SiC based microwave power devices and light emitting devices.

materials science, multidisciplinary,physics, applied
Study on the effects of Si-doping in molecular beam heteroepitaxial β-Ga2O3 films

Jiali Zhan,Ying Wu,Xiaohong Zeng,Boyuan Feng,Minghao He,Gaohang He,Sunan Ding

DOI: https://doi.org/10.1063/5.0190926

IF: 2.877

2024-03-14

Journal of Applied Physics

Abstract:β-Ga2O3, an emerging wide bandgap semiconductor material, holds significant potential for various applications. However, challenges persist in improving the crystal quality and achieving controllable doping of β-Ga2O3. In particular, the relationship between these factors and the mechanisms behind them are not fully understood. Molecular beam epitaxy (MBE) is viewed as one of the most sophisticated techniques for growing high-quality crystalline films. It also provides a platform for studying the effects of doping and defects in heteroepitaxial β-Ga2O3. In our study, we tackled the issue of Si source passivation during the MBE growth of Si-doped β-Ga2O3. We did this by using an electron beam vaporize module, a departure from the traditional Si effusion cell. Our research extensively explores the correlation between Si doping concentration and film properties. These properties include microstructure, morphology, defects, carrier conductivity, and mobility. The results from these investigations are mutually supportive and indicate that a high density of defects in heteroepitaxial β-Ga2O3 is the primary reason for the challenges in controllable doping and conductivity. These insights are valuable for the ongoing development and enhancement of β-Ga2O3-based device techniques.

physics, applied
Strategically constructed AlGaN doping barriers for efficient deep ultraviolet light-emitting diodes

Ziqi Zhang,Qianxi Zhou,Xu Liu,Zhenxing Lv,Bin Tang,Hansong Geng,Shengli Qi,Shengjun Zhou

DOI: https://doi.org/10.1364/ol.522212

IF: 3.6

2024-04-10

Optics Letters

Abstract:Ziqi Zhang, Qianxi Zhou, Xu Liu, Zhenxing Lv, Bin Tang, Hansong Geng, Shengli Qi, Shengjun Zhou Here, we propose a sandwich-like Si-doping scheme (undoped/Si-doped/undoped) in Al_0.6Ga_0.4N quantum barriers (QBs) to simultaneously ... [Opt. Lett. 49, 2049-2052 (2024)]

optics
Influence of Si Co-Doping on Magnetic, Electrical and Optical Properties of Ga1–x Mn X N Film Grown by MOCVD

FaFa Zhang,XueLin Yang,YuHao Zhang,XianZhe Jiang,ZhiYuan Lin,ZhiTao Chen,Ding Li,YueBin Tao,CunDa Wang,GuoYi Zhang

DOI: https://doi.org/10.1007/s11431-011-4438-5

2011-01-01

Science China Technological Sciences

Abstract:A detailed study is presented on magnetic, electrical and optical properties of Ga 1− x Mn x N: Si film grown by metal organic chemical vapor deposition (MOCVD) with high-purity SiH 4 as the Si dopant source. The room-temperature field dependence magnetization and zero-field-cooled (ZFC)/field-cooled (FC) measurements indicate that the film remains room-temperature ferromagnetism and it declines slightly after Si co-doping. However, room-temperature Hall measurements indicate that the electrical property of the film improves distinctly compared with Ga 1− x Mn x N. Cathode luminescence (CL) measurements show an obvious enhancement in luminous property and different peak strength changes at three different positions. Therefore, we demonstrate that Fermi level and the electron structure of Mn atoms will change with variation of the impurities co-doped and the intrinsic defects and this may be related with room-temperature ferromagnetism and the other corresponding properties of the film.
Temperature-dependent electrical and optical studies on nonpolar a-plane GaN thin films with various Si-doping levels

Daihua Chen,Jianguo Zhao,Xianjian Long,Bingjun Wang,Yao Liu,Yi Liang,Xiong Zhang,Lingyu Wan

DOI: https://doi.org/10.1016/j.mssp.2020.105063

IF: 4.1

2020-08-01

Materials Science in Semiconductor Processing

Abstract:The electrical and optical properties of nonpolar a-plane GaN films with various silane flow rates were studied intensively utilizing temperature-dependent Hall-effect and photoluminescence measurements. The electron Hall mobility was found to change from increase to decrease while the silane flow beyond 16.06 nmol/min. It was inferred that the primary scattering mechanism of Si-doped GaN transferred from ionized impurity to thermal lattice vibration with the temperature over 450 K as more disordered lattice vibration was caused by Si doping. Meanwhile, the band-gap of nonpolar a-plane GaN film demonstrated a 32.56 meV narrowing owing to the Si-doping induced band-gap narrowing effect. Moreover, the basal stacking faults (BSFs) and Ga vacancy-related emission were evidently suppressed, and a decrease of 12.02% for BSFs density was achieved with Si-doping.

engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter, applied
InGaN multiple quantum well based light-emitting diodes with indium composition gradient InGaN quantum barriers

Xien Sang,Yuan Xu,Mengshuang Yin,Fang Wang,Juin J. Liou,Yuhuai Liu

DOI: https://doi.org/10.1007/s11801-024-3099-0

2024-01-11

Optoelectronics Letters

Abstract:To improve the internal quantum efficiency (IQE) and light output power of InGaN light-emitting diodes (LEDs), we proposed an In-composition gradient increase and decrease InGaN quantum barrier structure. Through analysis of its P-I graph, carrier concentration, and energy band diagram, the results showed that when the current was 100 mA, the In-composition gradient decrease quantum barrier (QB) structure could effectively suppress electron leakage while improving hole injection efficiency, resulting in an increase in carrier concentration in the active region and an improvement in the effective recombination rate in the quantum well (QW). As a result, the IQE and output power of the LED were effectively improved.

optics
Silicon-Quantum-Dot Light-Emitting Diodes with Interlayer-Enhanced Hole Transport

Wei Gu,Xiangkai Liu,Xiaodong Pi,Xingliang Dai,Shuangyi Zhao,Li Yao,Dongsheng Li,Yizheng Jin,Mingsheng Xu,Deren Yang,Guogang Qin

DOI: https://doi.org/10.1109/jphot.2017.2671023

IF: 2.4

2017-01-01

IEEE Photonics Journal

Abstract:Despite the technological importance of silicon quantum dots (Si QDs) which are solely made of abundant and nontoxic Si, Si-QD light-emitting diodes (LEDs) clearly lag behind those based on other QDs, especially Cd- or Pb-containing QDs. It is imperative that novel measures should be taken to boost the performance of Si-QD LEDs. Here, we demonstrate that Si-QD LEDs can work much more efficiently after the use of interlayers between indium tin oxide (ITO) and poly(ethylene-dioxythiophene): polystyrene sulphonate (PEDOT:PSS) to enhance the hole transport of the devices. The interlayer of dipyrazino (2, 3-f: 2 ', 3 ' -h) quinoxaline-2,3,6,7,10,11-hexacarbonitrile (HAT-CN) or MoO3 increases the work function of ITO and improves the band alignment, leading to better hole injection from ITO to PEDOT: PSS. The resulting mitigated charge unbalance causes both the external quantum efficiency (EQE) and stability of Si-QD LEDs to significantly increase (up to similar to 170% for EQE and similar to 240% for device half-lifetime). The highest EQE of similar to 2.4% obtained in the current work is among the best values that have been reported for Si-QD LEDs. Even without encapsulation, the device half-lifetime is up to similar to 8.5 h. The enhancement of the hole transport induced by MoO3 is more significant than that induced by HAT-CN. Therefore, MoO3 more significantly enhances the performance of Si-QD LEDs than HAT-CN.

Influence of Si-doping in the Barriers on Optical and Electrical Properties of InGaN/GaN MQW LEDs

Band Gap Renormalization and Carrier Localization Effects in InGaN∕GaN Quantum-Wells Light Emitting Diodes with Si Doped Barriers

Optimal Silicon Doping Layers of Quantum Barriers in the Growth Sequence Forming Soft Confinement Potential of Eight-Period In0.2Ga0.8N/GaN Quantum Wells of Blue LEDs

Influence of Si Doping on Optical Characteristics of Cubic Gan Grown on (001) Gaas Substrates

Influence of structure and doping concentration of AlxGa1-xN/GaN double quantum wells on wavelength and absorption coefficient of intersubband transitions

Performance Improvement of AlGaN-based Deep-Ultraviolet Light-Emitting Diodes Via Si-doping Design of Quantum Barriers

Effect Of An Indium-Doped Barrier On Enhanced Near-Ultraviolet Emission From Ingan/Algan: In Multiple Quantum Wells Grown On Si(111)

Effect of Mg-doping Adjacent to Active Region on the Efficiency of InGaN Blue MQW LED

Research on AlInGaN quaternary alloys as MQW barriers in GaN-based laser diodes

Optimization Design of Quantum Barrier of InGaN Quantum Well in Blue Light-Emitting Diode

The Influence of InGaN Interlayer on the Performance of InGaN/GaN Quantum-Well-Based LEDs at High Injections

Effect of P–n Junction Location on Characteristics of InGaN/GaN Multiple-Quantum-Well Light-Emitting Diodes

Effects of InGaN Barriers with Low Indium Content on Internal Quantum Efficiency of Blue InGaN Multiple Quantum Wells

The Study on the Droop Effect in the InGaN/AlGaInN MQWs with Lattice-Matched AlGaN/InGaN Superlattices Barrier by Highly Excited Photoluminescence Measurement

Performance enhancement of InGaN/GaN MQWs grown on SiC substrate with sputtered AlN nucleation layer

Study on the effects of Si-doping in molecular beam heteroepitaxial β-Ga2O3 films

Strategically constructed AlGaN doping barriers for efficient deep ultraviolet light-emitting diodes

Influence of Si Co-Doping on Magnetic, Electrical and Optical Properties of Ga1–x Mn X N Film Grown by MOCVD

Temperature-dependent electrical and optical studies on nonpolar a-plane GaN thin films with various Si-doping levels

InGaN multiple quantum well based light-emitting diodes with indium composition gradient InGaN quantum barriers

Silicon-Quantum-Dot Light-Emitting Diodes with Interlayer-Enhanced Hole Transport