Abstract:The features of eight-period In 0.2 Ga 0.8 N/GaN quantum wells (QWs) with silicon (Si) doping in the first two to five quantum barriers (QBs) in the growth sequence of blue light-emitting diodes (LEDs) are explored. Epilayers of QWs’ structures are grown on 20 pairs of In 0.02 Ga 0.98 N/GaN superlattice acting as strain relief layers (SRLs) on patterned sapphire substrates (PSSs) by a low-pressure metal-organic chemical vapor deposition (LP-MOCVD) system. Temperature-dependent photoluminescence (PL) spectra, current versus voltage ( I - V ) curves, light output power versus injection current ( L - I ) curves, and images of high-resolution transmission electron microscopy (HRTEM) of epilayers are measured. The consequences show that QWs with four Si-doped QBs have larger carrier localization energy (41 meV), lower turn-on (3.27 V) and breakdown (− 6.77 V) voltages, and higher output power of light of blue LEDs at higher injection current than other samples. Low barrier height of QBs in a four-Si-doped QB sample results in soft confinement potential of QWs and lower turn-on and breakdown voltages of the diode. HRTEM images give the evidence that this sample has relatively diffusive interfaces of QWs. Uniform spread of carriers among eight QWs and superior localization of carriers in each well are responsible for the enhancement of light output power, in particular, for high injection current in the four-Si-doped QB sample. The results demonstrate that four QBs of eight In 0.2 Ga 0.8 N/GaN QWs with Si doping not only reduce the quantum-confined Stark effect (QCSE) but also improve the distribution and localization of carriers in QWs for better optical performance of blue LEDs.

Optimization Design of Quantum Barrier of InGaN Quantum Well in Blue Light-Emitting Diode

Improvement of Blue Llight-Ight-ight-eeemitting Mitting Ddiodes Iodes with an Undoped Graded Layer As the Electrons Tunneling Barrier Layer

Optimal Silicon Doping Layers of Quantum Barriers in the Growth Sequence Forming Soft Confinement Potential of Eight-Period In0.2Ga0.8N/GaN Quantum Wells of Blue LEDs

Performance Analysis of Gan-Based Light-Emitting Diodes with Lattice-Matched Ingan/Alinn/Ingan Quantum-Well Barriers

A Gan-Algan-Ingan Last Quantum Barrier in an Ingan/Gan Multiple-Quantum-Well Blue Led

Barrier Effects on the Optoelectronic Properties of GaN-based Irregular Multiple Quantum Wells for Dichromatic White LEDs

Effect of Si Doping in Barriers of Ingan/Gan Multiple Quantum Wells on the Performance of Green Light-Emitting Diodes

Influence of in Doping in GaN Barriers on Luminescence Properties of InGaN/GaN Multiple Quantum Well LEDs

Effects of InGaN Barriers with Low Indium Content on Internal Quantum Efficiency of Blue InGaN Multiple Quantum Wells

Research on Optimizing Barrier Material for AlInGaN Quantum Wells

Simulation and Design of Step-like InGaN Quantum Well Structure Blue Light-emitting Diode

Improvement of Blue InGaN Light-Emitting Diodes with Gradually Increased Barrier Heights from N- to P-Layers

Performance enhancement of blue light-emitting diodes by using special designed n and p-type doped barriers

Design Optimization of Quantum Barrier and n-Type Waveguide Layers of AlGaN Ultraviolet Laser

Influence of Well Position on the Electroluminescence Characteristics of InGaN/GaN Single Quantum Well Red Light-Emitting Diodes

Experimental and Theoretical Study of Blue InGaN/GaN Multiple Quantum Well Blue Light-Emitting Diodes

Enhancing the Blue GaN Laser Diodes by Modifying the First Barrier Structure and Adjusting the Growth Conditions of Quantum Wells

Origin of GaN-InGaN-GaN barriers in enhancing the hole injection for InGaN/GaN green light-emitting diodes

Enhanced Performance of InGaN‐Based Blue LEDs Using an AlGaN/InGaN Super‐Lattice Last Quantum Barrier

InGaN multiple quantum well based light-emitting diodes with indium composition gradient InGaN quantum barriers

Design Strategies For Mitigating The Influence Of Polarization Effects On Gan-Based Multiple Quantum Well Light-Emitting Diodes