Abstract:Exploitation of next-generation blue light-emitting diodes (LEDs) is the foundation of the revolution in lighting and display devices. Development of high-performance blue perovskite LEDs is still challenging. Herein, 4-aminobenzenesulfonic acid (SA) is introduced to passivate blue CsPbBr3 nanoplates (NPLs), reducing the ionic migration via a more stable Pb2+-SO3-- formation, and the trap state density of films shows a 50% reduction. The inevitable Br- vacancy defects after the multistep washing process can be suppressed by a suitable MABr treatment, which can boost the external quantum efficiency (EQE) performance. It should be noted that the coverage of NPL films is another key factor to realize reproducible pure blue electroluminescence (EL). Therefore, we proposed an alternate droplet/spin coating method to improve the coverage and thickness of NPL layer to prevent hole transport layer emission and increase the reproducibility of LED performance and spectra. Furthermore, we designed hole transport layers to decrease the hole transport barrier and improve the energy-level alignment. According to SA passivation, MABr treatment, alternate droplet/spin coating method, and device structure optimization, a CsPbBr3 NPL-based pure blue (0.138, 0.046) LED with 3.18% maximum EQE can be achieved, and the half-lifetime of EL can be enhanced 1.71 times as compared to that of the counterpart LED without SA. Both performance and stability of pure blue NPL LEDs can be greatly improved via ligand passivation, alternate droplet/spin coating method, and device structure optimization, which is a trend to promote the development of pure blue perovskite LEDs in future.

Performance enhancement of blue light-emitting diodes by using special designed n and p-type doped barriers

Improvement of Blue Llight-Ight-ight-eeemitting Mitting Ddiodes Iodes with an Undoped Graded Layer As the Electrons Tunneling Barrier Layer

Performance Enhancement of Ingan-Based Light-Emitting Diodes with Ingan/Alinn/Ingan Composition-Graded Barriers

Optimization Design of Quantum Barrier of InGaN Quantum Well in Blue Light-Emitting Diode

Enhanced Performance and High Resistance to Efficiency Degradation of Blue Quantum-Dot Light-Emitting Diodes Using the Lewis Base Blended Hole-Transporting Layers

Achieving High-Performance Blue GaN-Based Light-Emitting Diodes by Energy Band Modification on Al x In y Ga 1– x – y N Electron Blocking Layer

Quantum-Dot Blue Light Emitting Diodes Utilizing Organic/Inorganic Hybrid Structures

Enhancing the Performance of GaN-Based Light-Emitting Diodes by Incorporating a Junction-Type Last Quantum Barrier

Improving the Performance of Blue Polymer Light-Emitting Diodes Using a Hole Injection Layer with a High Work Function and Nanotexture.

Efficient Blue Electroluminescent Device Using Tetra(β-Naphthyl)silane As a Hole-Blocking Material

Enhancing the Performance of Blue GaN-based Light Emitting Diodes with Double Electron Blocking Layers

Efficient Pure Blue Light-Emitting Diodes Based on CsPbBr3 Quantum-Confined Nanoplates.

Efficient Pure Blue Light-Emitting Diodes Based on CsPbBr 3 Quantum-Confined Nanoplates

High-performance green and blue quantum-dot light-emitting diodes with eliminated charge leakage

High Performance Blue Organic Light-Emitting Devices Fabricated by Using the Doped Alq 3 in NPB Hole Transmistion Layers

Enhanced Performance of GaInN LEDs by Abrupt Mg Doped P-Algan Electron Blocking Layer

Enhanced performances of quantum dot light-emitting diodes with doped emitting layers by manipulating the charge carrier balance

Performance Improvement of InGaN Red Light‐Emitting Diode by Using V‐Pits Layer and Step‐Graded GaN Barrier

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Effects of the P-Alingan/gan Superlattices' Structure on the Performance of Blue LEDs

Charge Carrier Regulation for Efficient Blue Quantum-Dot Light-Emitting Diodes Via a High-Mobility Coplanar Cyclopentane[b]thiopyran Derivative