Abstract:Abstract A comparable concentration of carriers injected and transported into the active region, that is, balanced hole and electron injection, significantly affects the optoelectronic performance of AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs). In this study, we introduce a novel structure characterized by a carrier injection balanced modulation layer, incorporating a polarization-regulating gradient p -AlGaN in a DUV LED. We conducted a systematic examination of its impact on the carrier injection and transport processes. Theoretical simulations demonstrate the mitigation of abrupt variations in Al content at the interface between electron blocking layer/ p -AlGaN and p -AlGaN/ p -GaN within the valence bands. Consequently, holes are more likely to be injected into the active region rather than accumulating at these interfaces. Meanwhile, due to the reduced barrier height at the top of the valence band, the holes were efficiently transported into the quantum well and confined with comparable and balanced concentrations of electrons by suppressing overflow, thereby promoting the radiative recombination rate. Compared with the conventional DUV LED, the hole concentration and radiative recombination rate of the designed structure in the final quantum well are significantly increased to 179.8% and 232.3%, respectively. The spontaneous emission intensity achieves nearly twice at the same current injection density. Moreover, the efficiency droop is significantly suppressed when operated at a gradually increasing current density. This study presents a promising approach that can serve as a reference for achieving high-efficiency AlGaN-based DUV LEDs.

Strategically constructed AlGaN doping barriers for efficient deep ultraviolet light-emitting diodes

Performance Improvement of AlGaN-based Deep-Ultraviolet Light-Emitting Diodes Via Si-doping Design of Quantum Barriers

Sub-nanometer ultrathin epitaxy of AlGaN and its application in efficient doping

Implementation of electron restriction layer in n-AlGaN toward balanced carrier distribution in deep ultraviolet light-emitting-diodes

Advantages of AlGaN-based Deep-Ultraviolet Light-Emitting Diodes with an Al-composition Graded Quantum Barrier.

Progress in efficient doping of Al-rich AlGaN

High Performance of AlGaN Deep-Ultraviolet Light Emitting Diodes Due to Improved Vertical Carrier Transport by Delta-Accelerating Quantum Barriers

Significant Conductivity Enhancement in Al-rich N-Algan by Modulation Doping

Enhanced Performance of N-polar AlGaN-based Deep-Ultraviolet Light-Emitting Diodes.

Polarization Engineered p-Type Electron Blocking Layer Free AlGaN Based UV-LED Using Quantum Barriers with Heart-Shaped Graded Al Composition for Enhanced Luminescence

Doped Effects of Quaternary AlInGaN Last Quantum Barrier for Deep-Ultraviolet Laser Diodes Without Electron Blocking Layer

Improved Performance of Electron Blocking Layer Free AlGaN Deep Ultraviolet Light-Emitting Diodes Using Graded Staircase Barriers

Performance improvement of AlGaN-based deep-ultraviolet light-emitting diodes via asymmetric step-like AlGaN quantum wells

Optimization of AlGaN-based deep ultraviolet light emitting diodes with superlattice step doped electron blocking layers

Carrier Velocity Modulation by Asymmetrical Concave Quantum Barriers to Improve the Performance of AlGaN-Based Deep Ultraviolet Light Emitting Diodes

Enhanced performance of AlGaN-based deep-UV LED by incorporating carrier injection balanced modulation layer synergistically with polarization-regulating structures

Controlled Bunching Approach for Achieving High Efficiency Active Region in AlGaN-based Deep Ultraviolet Light-Emitting Devices with Dual-Band Emission

AlGaN-Based Multiple Quantum Well Deep Ultraviolet Light-Emitting Diodes with Polarization Doping

AlGaN-based Deep Ultraviolet Light-emitting Diodes on Separated Multiple Quantum Barrier Electron Blocking Layer

AlGaN-Based Deep UV Laser Diodes without an Electron Blocking Layer and with a Reduced Aluminum Composition of Quantum Barriers

Greatly Enhanced Performance of AlGaN-based Deep Ultraviolet Light Emitting Diodes by Introducing a Polarization Modulated Electron Blocking Layer.