Thermal Modeling of an Electrolytic Capacitor Bank

Zhijian Yin,Yongheng Yang,Huai Wang

DOI: https://doi.org/10.1109/compel49091.2020.9265857

2020-01-01

Abstract:This paper proposes a capacitor bank thermal impedance model considering the coupling between capacitors. FEM simulations and experimental characterizations are performed on 450 V/5.3 mF electrolytic capacitors. The comparative results verify the effectiveness of the proposed thermal model.

What problem does this paper attempt to address?

Electrical Modeling of Multi-Walled Carbon Nanotube (Mwcnt)-Based Capacitors for High-Density RF Integration

Wen-Sheng Zhao,Wen-Yan Yin,Yong-Xin Guo

DOI: https://doi.org/10.1109/ieee-iws.2013.6616693

2013-01-01

Abstract:Modeling of multi-walled carbon nanotube (MWCNT)-based capacitors is performed in this paper. Their equivalent circuit model is modified with the impacts of quantum capacitance as well as kinetic inductance treated in an appropriate manner. Further, both effective capacitance and quality factor of the MWCNT-based capacitors are predicted even at ultrahigh frequencies, and their self-resonance frequencies are also captured successfully.
A High-Resolution Analytical Thermal Modeling Method of Capacitor Bank Considering Thermal Coupling and Different Cooling Modes

Chunlin Lv,Jinjun Liu,Yan Zhang,Jinpeng Yin,Xiaotong Zhang

DOI: https://doi.org/10.1109/tpel.2023.3245629

IF: 5.967

2023-04-18

IEEE Transactions on Power Electronics

Abstract:Thermal stress is of crucial importance to capacitor reliability. However, for a capacitor bank, on spatial scale, the complex heat transfer modes are not clearly illustrated; and on time scale, the equivalent series resistance (ESR) aging is neither fully discussed in current evaluation methods. These could lead to a glaring error in the prediction of temperature distribution and lifetime estimation. Therefore, this article proposed an analytical thermal modeling method with high-resolution for the capacitor bank, considering the thermal coupling effect between individual capacitors, as well as different cooling conditions and the heat variation caused by ESR aging. First, the improved thermal state-space modeling method is proposed to universally describe a multiple heat source system. Then, based on heat transfer and fluid mechanic theories, the characterization method of thermal coupling effect in different cooling modes is discussed. Furthermore, the ESR aging model is applied in the electrothermal analysis of capacitor bank, aiming to improve the accuracy of thermal calculation in long time scale. Finally, to alleviate the uneven temperature distribution in an in-line designed capacitor bank, a staggered design method is proposed followed by a case study, where a nine-capacitor bank is presented to validate the corresponding modeling method and optimization.

engineering, electrical & electronic
Thermal Stress Model of Transversal Forced Air-Cooled Capacitor Banks for MW Power Converters

Zhijian Yin,Rui Wu,Morten Hygum,Yongheng Yang,Huai Wang

DOI: https://doi.org/10.23919/icpe2019-ecceasia42246.2019.8796881

2019-01-01

Abstract:Capacitor banks are key components in high power applications, the reliability of which affects the overall system lifetime. It is known that the thermal stress in each capacitor can affect the lifetime performance of the entire capacitor bank. In this paper, an analytical thermal model is presented to estimate the average capacitor thermal stress in a transversal forced air-cooled three-phase AC-filter capacitor bank for MW-level power converters. The proposed model calculates the thermal resistance of a capacitor bank considering power losses, geometry, cooling conditions and physical arrangement. With a conventional Foster thermal network, the hot-spot temperature and case temperature for each capacitor can be obtained. The experimental results on a full-scale three-phase filter capacitor bank consisting of 27 film sub-capacitors have demonstrated the effectiveness of this model.
Thermal-Fluid Co-Simulation and Modelling of IGBT with Thermal Resistance Network

Yu Zhang,Jing-Wei Zhang,Yin-Da Wang,Zhi-Yuan Chen,Wen-Yan Yin

DOI: https://doi.org/10.23919/ACES-China60289.2023.10249915

2023-01-01

Abstract:Due to the miniaturization of power semiconductor device and the increasing power density, temperature prediction has played an important part in module reliability. In this paper, the model of an insulated gate bipolar transistor (IGBT) module is firstly established, and junction temperature is extracted from the numerical simulation. Furthermore, the corresponding thermal resistance network is constructed by temperature curve fitting. Under various circumstances, we achieve fine agreement with finite element method (FEM).
Electrothermal modeling of coaxial through silicon via (TSV) for three-dimensional ICs

Wensheng Zhao,Xiaopeng Wang,XiaoLong Xu,Wenyan Yin

DOI: https://doi.org/10.1109/EDAPS.2010.5683012

2010-01-01

Abstract:An equivalent lumped- element circuit model of coaxial TSV is proposed in this paper, in which both frequency-and temperature-dependent elements are extracted using the partialelement equivalent-circuit (PEEC) method. One important aspect of coaxial TSV modelling is its capacitance extraction, in which MOS effects are taken into account. The circuit model is also reduced to a transmission line one, with its transmission characteristics predicted theoretically for the silicon material but with different resistivities.
Simulation of High Thermal Conductivity Polyurethane DC Support Capacitor

Yong Sun,Yanjie Cui,Jie Sheng,Chunhong Zhou,Jun Sun,Yu Feng

DOI: https://doi.org/10.1080/10584587.2024.2322349

2024-10-17

Integrated Ferroelectrics

Abstract:In the field of energy storage, capacitors are receiving more and more attention due to their high power density, long life cycle, lack of maintenance, etc. We have developed a thermoelectric coupling model to simulate the temperature rise of DC support capacitors under normal operating conditions at room temperature and to obtain accurate results. Boundary conditions are established under this model and the temperature rise of the capacitor is shown by iteration as well as solving the partial differential equation. The temperature rise condition of the capacitor is shown by iteration and solving partial differential equations and the actual situation is predicted and investigated. The results show that the capacitor can operate steadily under normal working conditions.

engineering, electrical & electronic,physics, condensed matter, applied
A Ferroelectric Capacitor Compact Model For Circuit Simulation

Chaogang Wei,Tianling Ren,Dan Xie,Zhigang Zhang,Jun Zhu,Litian Liu

DOI: https://doi.org/10.1109/icsict.2004.1435109

2004-01-01

Abstract:A ferroelectric capacitor compact model based on physical and mathematical basis with model parameters extracted from experimental measurements is proposed. This model accounts for both main hysteresis loop and minor hysteresis loops with asymmetric nonperiodic input signals. A compact equivalent circuit of this model is described for circuit simulation. Good agreement was achieved between the measurements and simulation results over a wide range of operation.
Study on the Heat Dissipation Model and Simulation of Circular Element for DC-Link Capacitor

Qianglin Zuo,Qiaoshu Lei,Shaolong Zhong,Yongxin Zhang,Zhimin Dang

DOI: https://doi.org/10.1007/978-981-97-0869-7_65

2024-01-01

Abstract:With the continuous expansion of the application range of self-healing dry metallized film capacitor, its heat dissipation mode and internal temperature-rising have become important theoretical and engineering problems. In view of this, the paper is based on the heating rule of the cylindrical element of the DC-link capacitor. Furthermore, combined with the principle of electro-thermal duality, the thermal calculation model of the cylindrical element is established, and the thermal resistance calculation formula of a cylindrical element is obtained through the integration of the differential cells. Finally, the correctness of the thermal calculation model of cylindrical element is verified through the test, and the verification method of thermal calculation of cylindrical element is proposed, which will provide theoretical and experimental reference for the heating of cylindrical element of DC-link capacitor.
Physics-based modeling of ferroelectric hysteresis for ceramic capacitors in inductively coupled microstimulators

Yves Olsommer,Frank R. Ihmig,Gianluca Rizzello

DOI: https://doi.org/10.1109/tpel.2024.3361075

IF: 5.967

2024-01-01

IEEE Transactions on Power Electronics

Abstract:In this paper, we present a physics-based model for nonlinear and hysteretic ferroelectric capacitors in inductively coupled microstimulator circuits. The purpose of this model is to predict the system's dynamic response as a function of the dielectric material properties, with the aim of optimizing the performance in passive power control applications. We describe the workflow starting from the extraction of the dielectric material properties of commercial ceramic capacitors to the implementation into the physics-based model of the overall circuit. Selected capacitors were experimentally characterized at frequencies above 100 kHz by means of both small signals (5 mVrms, ±25 VDC and ±40 VDC) and large signals (±25 VAC and ±40 VAC). Our results show that the developed model is well suited for accurately predicting the circuit's stimulation current for highly nonlinear capacitors and exhibits higher precision compared to commonly used models based on differential capacitance. Preliminary in vitro measurement results are finally described to provide proof of concept of the envisioned modelbased passive power control in implantable microstimulators.

engineering, electrical & electronic
A Statistical Equivalent Circuit Modelling Based On Measured And De-Embedded S-Parameters

De-Cao Yang,Shi Yao,Liang Gao,Jing Zhou,Nan Xia,Zhengdong Gu,Xing-Chang Wei

DOI: https://doi.org/10.1109/isemc.2018.8394098

2018-01-01

Abstract:In this paper, a statistical equivalent circuit model of a chip monolithic ceramic capacitor is analyzed based on the measured and de-embedded S parameters. By optimizing the model parameters in the equivalent model, the deviation introduced by the measurement and the de-embedding process are alleviated. Through analyzing the equivalent model of 1pF and 2pF capacitor, the model of a 1.5pF capacitor is calculated and verified by the measurement results.
A Thermal Network Model for Multichip Power Modules Enabling to Characterize the Thermal Coupling Effects

Huimin Wang,Zongyao Zhou,Zhiliang Xu,Xinglai Ge,Yongheng Yang,Yi Zhang,Bo Yao,Dong Xie

DOI: https://doi.org/10.1109/tpel.2024.3355207

IF: 5.967

2024-01-01

IEEE Transactions on Power Electronics

Abstract:A proper thermal network model (TNM) facilitates the thermal analysis of multichip power modules, and is beneficial to reliability evaluation of power converters. However, many TNMs are struggling to provide accurate thermal analysis while maintaining acceptable computational efficiency. To address this, a TNM based on the Cauer model is proposed in this paper, where the Cauer model is obtained with the assistance of the structure function (SF). Then, the thermal coupling effects in multichip power modules are fully characterized. More specifically, the thermal coupling in the proposed TNM is equivalent to the injected power losses from the specific nodes, and an enumeration method is accordingly used to identify the injected nodes and the injected power losses. Moreover, a discretization approach based on the forward Euler method is implemented to enhance the computational efficiency. Subsequently, the junction temperature of the multichip power module is estimated through the signal-flow graph method. Finally, the proposed TNM uses the typical insulated-gate bipolar transistor (IGBT) modules as a case study, and extensive simulations and experimental tests are conducted to validate the effectiveness of the proposed TNM.
Electrical–Thermal Cosimulation of Coaxial TSVs with Temperature-Dependent MOS Effect Using Equivalent Circuit Models

Qiu Min,Er-Ping Li,Jian-Ming Jin,Wenchao Chen

DOI: https://doi.org/10.1109/temc.2020.2973811

IF: 2.036

2020-01-01

IEEE Transactions on Electromagnetic Compatibility

Abstract:A coupled electrical-thermal cosimulation with consideration of the temperature dependence of the metal-oxide-semiconductor (MOS) effect is performed for coaxial through silicon vias (C-TSVs) by using equivalent electrical and thermal circuit models. In the equivalent electrical circuit (EEC) model, the dependence of the MOS capacitance on bias voltage, operation frequency, oxide charge density, and temperature is studied, and further verified by measurement results from a previous publication. A 3-D equivalent thermal circuit (ETC) model with lump components, including thermal resistance and thermal capacitance analytically calculated from the geometry and material parameters of C-TSVs, is proposed for transient thermal simulation. The accuracy of the EEC and ETC models is verified by comparisons with full-wave simulations. Transient electrical-thermal co-simulation is performed for the C-TSVs with the EEC and ETC models. Results reveal that the temperature dependence of depletion width and corresponding MOS capacitance leads to considerable variations in the S-parameters of C-TSVs.
Modeling Switching Delay Of Ferroelectric Domains For Ferroelectric Capacitor

CHAO-GANG WEI,TIAN-LING REN,ZHI-GANG ZHANG,DAN XIE,JUN ZHU,LI-TIAN LIU

DOI: https://doi.org/10.1080/10584580600657369

2006-01-01

Integrated Ferroelectrics

Abstract:A ferroelectric capacitor compact model based on physical basis with model parameters extracted from experimental measurements is proposed. A compact equivalent circuit of this model is presented for circuit simulation. Phenomena of hysteresis loops concerning switching delay of ferroelectric domains are described, and modification are made to the compact model to express the transient characteristics due to switching delay of ferroelectric domains. After the modification to the model, precise agreement is achieved between the measurements and simulation results over a wide range of operation.
Consistent and Efficient Modeling of the Nonlinear Properties of Ferroelectric Materials in Ceramic Capacitors for Frugal Electronic Implants

Yves Olsommer,Frank R. Ihmig

DOI: https://doi.org/10.3390/s20154206

IF: 3.9

2020-07-28

Sensors

Abstract:In recent years, the development of implantable electronics has been driven by the motivation to expand their field of application. The main intention is to implement advanced functionalities while increasing the degree of miniaturization and maintaining reliability. The intrinsic nonlinear properties of the electronic components, to be used anyway, could be utilized to resolve this issue. To master the implementation of functionalities in implantable electronics using the nonlinear properties of its electronic components, simulation models are of utmost importance. In this paper, we present a simulation model that is optimized in terms of consistency, computing time and memory consumption. Three circuit topologies of nonlinear capacitors, including hysteresis losses, are investigated. An inductively coupled measurement setup was realized to validate the calculations. The best results were obtained using the Trapezoid method in ANSYS with a constant step size and a resolution of 500 k points and using the Adams method in Mathcad with a resolution of 50 k points. An inductive coupling factor between 7% and 10% leads to a significant improvement in consistency compared to lower coupling factors. Finally, our results indicate that the nonlinear properties of the voltage rectifier capacitor can be neglected since these do not significantly affect the simulation results.

engineering, electrical & electronic,chemistry, analytical,instruments & instrumentation
How Thermal Effect Regulates Cyclic Voltammetry of Supercapacitors

Teng Zhao,Shuangliang Zhao,Shenggao Zhou,Zhenli Xu

2023-07-03

Abstract:Cyclic voltammetry (CV) is a powerful technique for characterizing electrochemical properties of electrochemical devices. During charging-discharging cycles, thermal effect has profound impact on its performance, but existing theoretical models cannot clarify such intrinsic mechanism and often give poor prediction. Herein, we propose an interfacial model for the electro-thermal coupling, based on fundamentals in non-equilibrium statistical mechanics. By incorporating molecular interactions, our model shows a quantitative agreement with experimental measurements. The integral capacitance shows a first enhanced then decayed trend against the applied heat bath temperature. Such a relation is attributed to the competition between electrical attraction and Born repulsion via dielectric inhomogeneity, which is rarely understood in previous models. In addition, as evidenced in recent experimental CV tests, our model predicts the non-monotonic dependence of the capacitance on the bulk electrolyte density, further demonstrating its high accuracy. This work demonstrates a potential pathway towards next-generation thermal regulation of electrochemical devices.

Mesoscale and Nanoscale Physics
An Improved Ferroelectric Capacitor Compact Model Based on Probability Theory for Circuits Simulation

Ying-Jie Zhang,Tian-Ling Ren,Li-Tian Liu

DOI: https://doi.org/10.1080/10584580701759312

2007-01-01

Integrated Ferroelectrics

Abstract:ABSTRACT Improvements have been achieved to perfect the behavior model that we published before and the temperature performance can be integrated easily while the physical meaning of the parameters is clearer. Central Limit Theorem is the mathematical basis of this advanced model and the Preisach assumption is the physical basis. The simulation precision doesn't decrease.
Physically-based RF model for metal-oxide-metal capacitors

Chunqi Geng,Kok Wai Chew,Kiat Seng Yeo,Manh Anh Do,Jianguo Ma,Chee Tee Chua,Kai Shao

DOI: https://doi.org/10.1049/el:20000393

2000-01-01

Electronics Letters

Abstract:A new metal-oxide-metal (MOM) capacitor model is presented for RF (radio frequency) applications. Parasitics resulting from the geometry and physical topology of the model are taken into account. The model fits very well with the measured data in the frequency range 1-10 GHz. The results show that the proposed model provides more accurate results than the conventional model, while retaining the ph...
A Ferroelectric Capacitor Mathematical Model for Spice Simulation

CG Wei,TL Ren,J Zhu,LT Liu

DOI: https://doi.org/10.1080/10584580490893691

2004-01-01

Integrated Ferroelectrics

Abstract:A behavioral ferroelectric capacitor model based on Q-V expression with model parameters extracted from experimental hysteresis loops is proposed. A compact equivalent circuit of this model is described for spice simulation of nonvolatile memories. Excellent agreement was achieved between our measurements and simulation results. The runtime for simulation of a hysteresis loop with 10,000 points is 1.55 seconds, which is similar to 1.15 seconds for a normal capacitor.
A Three-Dimensional Theoretical Model for Estimating the Thermal Residual Stresses in Micro Multilayer Ceramic Capacitors

Wu-Gui Jiang,Xi-Qiao Feng,Cewen Nan

DOI: https://doi.org/10.1016/j.compscitech.2007.09.006

IF: 9.1

2008-01-01

Composites Science and Technology

Abstract:A three-dimensional theoretical model is proposed to estimate the thermal residual stresses in multilayer ceramic capacitors (MLCCs) based on the effective medium method in micromechanics of composites. The MLCC is first decomposed into some sub-blocks with different material properties, and then the classical lamination theory and the combined Voigt’s and Reuss’ assumptions are adopted to calculate the residual stress distributions. The results obtained from this theoretical model show a good agreement with the numerical results of finite element method. The effects of such key factors as the dielectric layer thickness, the number of dielectric layers, the cover layer sizes, as well as the length and width creepage paths on the distributions of residual stresses are all examined. The suggested theoretical method provides a convenient tool for estimating the residual stresses in MLCCs as a function of characteristic sizes and manufacturing process parameters and, therefore, is helpful for the optimal design of MLCCs with enhanced performance.
Heracles: A HfO$\mathrm{_2}$ Ferroelectric Capacitor Compact Model for Efficient Circuit Simulations

Luca Fehlings,Md Hanif Ali,Paolo Gibertini,Egidio A. Gallicchio,Udayan Ganguly,Veeresh Deshpande,Erika Covi

2024-10-10

Abstract:This paper presents a physics-based compact model for circuit simulations in a SPICE environment for HfO2-based ferroelectric capacitors (FeCaps). The model has been calibrated based on experimental data obtained from HfO2-based FeCaps. A thermal model with an accurate description of the device parasitics is included to derive precise device characteristics based on first principles. The model incorporates statistical data that enables Monte Carlo analysis based on realistic distributions, thereby making it particularly well-suited for design-technology co-optimization (DTCO). Furthermore, the model is demonstrated in circuit simulations using an integrated circuit with current programming, wherein partial switching of the ferroelectric polarization is observed. Finally, the model was benchmarked in an array simulation, reaching convergence in 1.8 s with an array size of 100 kb.

Emerging Technologies

Thermal Modeling of an Electrolytic Capacitor Bank

Electrical Modeling of Multi-Walled Carbon Nanotube (Mwcnt)-Based Capacitors for High-Density RF Integration

A High-Resolution Analytical Thermal Modeling Method of Capacitor Bank Considering Thermal Coupling and Different Cooling Modes

Thermal Stress Model of Transversal Forced Air-Cooled Capacitor Banks for MW Power Converters

Thermal-Fluid Co-Simulation and Modelling of IGBT with Thermal Resistance Network

Electrothermal modeling of coaxial through silicon via (TSV) for three-dimensional ICs

Simulation of High Thermal Conductivity Polyurethane DC Support Capacitor

A Ferroelectric Capacitor Compact Model For Circuit Simulation

Study on the Heat Dissipation Model and Simulation of Circular Element for DC-Link Capacitor

Physics-based modeling of ferroelectric hysteresis for ceramic capacitors in inductively coupled microstimulators

A Statistical Equivalent Circuit Modelling Based On Measured And De-Embedded S-Parameters

A Thermal Network Model for Multichip Power Modules Enabling to Characterize the Thermal Coupling Effects

Electrical–Thermal Cosimulation of Coaxial TSVs with Temperature-Dependent MOS Effect Using Equivalent Circuit Models

Modeling Switching Delay Of Ferroelectric Domains For Ferroelectric Capacitor

Consistent and Efficient Modeling of the Nonlinear Properties of Ferroelectric Materials in Ceramic Capacitors for Frugal Electronic Implants

How Thermal Effect Regulates Cyclic Voltammetry of Supercapacitors

An Improved Ferroelectric Capacitor Compact Model Based on Probability Theory for Circuits Simulation

Physically-based RF model for metal-oxide-metal capacitors

A Ferroelectric Capacitor Mathematical Model for Spice Simulation

A Three-Dimensional Theoretical Model for Estimating the Thermal Residual Stresses in Micro Multilayer Ceramic Capacitors

Heracles: A HfO$\mathrm{_2}$ Ferroelectric Capacitor Compact Model for Efficient Circuit Simulations