Abstract:The AlGaN/GaN high-electron-mobility transistor (HEMT) passivated by fluorinated graphene (FG) has been investigated. The performances of the HEMTs without passivation before and after F plasma treatment, with FG, Silicon nitride (SiNx), FG/SiNx passivation were contrasted. Compared with the HEMT without F plasma treatment and passivation, the gate leakage current decreases one and a half orders of magnitude after F plasma treatment and SiNx passivated, and four orders of magnitude after FG and FG/SiNx passivated. To study the leakage mechanisms, the temperature dependences of gate leakages have been tested at 323 K-473 K. Through analysis and fitting, the leakages are composed of three components, which are thermionic emission (TE) current, two-dimensional variable range hopping (2D-VRH) current, and Fowler-Nordheim tunneling (FNT) current. TE dominates in the high forward bias region. 2D-VRH dominates in low forward bias. And the chief leakage mechanisms at reverse bias are 2D-VRH and FNT. At 473 K, Schottky barrier height of the HEMT with FG passivation is 1.21 eV. The activation energy and the effective barrier height on the HEMT with FG passivation are 0.64 eV and 0.33 eV respectively. Furthermore, the reasons for the decrement of the gate leakage on the HEMT with FG and FG/SiNx passivation are the enhancement of Schottky barrier heights and augmentation of activation energy. And the improvement in gate leakages for the HEMT passivated by FG/SiNx mainly results from the effect of FG.

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Reverse-Bias Stability And Reliability Of Enhancement-Mode Gan-Based Mis-Fet

High Breakdown Voltage and Low Dynamic ON-Resistance AlGaN/GaN HEMT with Fluorine Ion Implantation in SiNx Passivation Layer

Threshold voltage control by gate oxide thickness in fluorinated GaN metal-oxide-semiconductor high-electron-mobility transistors

Gate Leakage Mechanisms of the AlGaN/GaN HEMT with Fluorinated Graphene Passivation

High-performance Enhancement-Mode AlGaN/GaN HEMTs Using Fluoride-Based Plasma Treatment

Threshold Voltage Modulation Mechanism of AlGaN/GaN Metal-Insulator-semiconductor High-Electron Mobility Transistors with Fluorinated Al2O3 As Gate Dielectrics

Improving Gate Reliability of 6-in E-Mode GaN-Based MIS-HEMTs by Employing Mixed Oxygen and Fluorine Plasma Treatment

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Degradation Mechanisms of Gate Leakage in GaN-Based HEMTs at Low Dose Rate Irradiation

Fluorine-plasma Surface Treatment for Gate Forward Leakage Current Reduction in AlGaN/GaN HEMTs

Analysis and Reduction of the Gate Forward Leakage Current in AlGaN/GaN HEMTs Employing Energy-Band Modulation Technology

Time-Dependent Threshold Voltage Instability Mechanisms of P-Gan Gate AlGaN/GaN HEMTs under High Reverse Bias Conditions

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The Effect of Fluorine Doping in the Charge Trapping Layer on Device Characteristics and Reliability of E-Mode GaN MIS-HEMTs