Abstract:Gallium nitride (GaN)-based high electron mobility transistor (HEMT) power devices have demonstrated great potential applications due to high current density, high switching speed, and low ON-resistance in comparison to the established silicon (Si)-based semiconductor devices. These superior characteristics make GaN HEMT a promising candidate for next-generation power converters. Many of the early GaN HEMTs are devices with Schottky gate, which suffer a high gate leakage and a small gate swing. By inserting an insulator under gate metal, the MIS-HEMT is highly preferred over the Schottky-gate HEMT for high-voltage power switche, owing to the suppressed gate leakage and enlarged gate swing. However, the insertion of the gate dielectric creates an additional dielectric/(Al) GaN interface that presents some great challenges to AlGaN/GaN MIS-HEMT, such as the threshold voltage (Vth) hysteresis, current collapse and the reliability of the devices. It has been reported that the poor-quality native oxide (GaOx) is detrimental to the dielectric/(Al) GaN interface quality that accounted for the Vth instability issue in the GaN based device. Meanwhile, it has been proved that in-situ plasma pretreatment is capable of removing the surface native oxide. On the other hand, low power chemical vapor deposition (LPCVD)-Si3N4 with free of plasma-induced damage, high film quality, and high thermal stability, shows great potential applications and advantages as a choice for the GaN MIS-HEMTs gate dielectric and the passivation layer. In this work, an in-situ pre-deposition plasma nitridation process is adopted to remove the native oxide and reduce surface dangling bonds prior to LPCVD-Si3N4 deposition. The LPCVD-Si3N4/GaN/AlGaN/GaN MIS-HEMT with a high-quality LPCVD-Si3N4/GaN interface is demonstrated. The fabricated MIS-HEMT exhibits a very-low Vth hysteresis of 186 mV at VG-sweep=(-30 V, +24 V), a high breakdown voltage of 881 V, with the substrate grounded. The hysteresis of our device at a higher positive end of gate sweep voltage (VG +20 V) is the best to our knowledge. Switched off after an off-state VDS stress of 400 V, the device has a dynamic on-resistance Ron only 36% larger than the static Ron.

Performance Enhancement of AlGaN/GaN MIS-HEMTs Realized via Supercritical Nitridation Technology

Fabrication of All-GaN Integrated MIS-HEMTs with High Threshold Voltage Stability Using Supercritical Technology

Investigation of Supercritical Fluid Treatment for SiN/SiON/AlGaN/GaN MIS-HEMTs

Characterization and Optimization of AlGaN/GaN Metal-Insulator Semiconductor Heterostructure Field Effect Transistors Using Supercritical CO2/H2O Technology*

Performance and Reliability Optimization of Supercritical-Nitridation-Treated AlGaN/GaN High-Electron-Mobility Transistors

Threshold Voltage Instability in III-nitride Heterostructure Metal–insulator–semiconductor High-Electron-mobility Transistors: Characterization and Interface Engineering

High Performance AlGaN/GaN HEMTs by Supercritical Fluid

AlGaN/GaN MIS-HEMTs of Very-Low ${v}_{\sf {{th}}}$ Hysteresis and Current Collapse with In-Situ Pre-Deposition Plasma Nitridation and LPCVD-Si3N4 Gate Insulator

Investigation of the Trap States and V Th Instability in Normally-Off GaN MIS-FETs with LPCVD SiNx/PEALD AlN Gate Dielectric Stack and in Situ H2/N2 Plasma Pretreatment

Improved Performance of Fully-Recessed High-Threshold-Voltage GaN MIS-HEMT With in Situ H2/N2 Plasma Pretreatment

Improved Performance of Fully-Recessed High-Threshold-Voltage GaN MIS-HEMT with in Situ H₂/N₂ Plasma Pretreatment

NH3/N2 plasma treatment on etched AlGaN surface for high-performance p-GaN HEMTs fabrication

Interface Si Donor Control to Improve Dynamic Performance of AlGaN/GaN MIS-HEMTs

Enhanced Performance of Low-Leakage-Current Normally off P-Gan Gate HEMTs Using NH3 Plasma Pretreatment

Improved Electrical Performance of InAlN/GaN High Electron Mobility Transistors with Post Bis(trifluoromethane) Sulfonamide Treatment

Improved Performance of Enhancement-Mode GaN MIS-FET Based on a Self-Terminating Gate Recess Etching Technique with in Situ NH3 Pre-Treatment

AlGaN/GaN MISHEMTs with AlN Gate Dielectric Grown by Thermal ALD Technique

Pulsed N2 Plasma Surface Treatment for AlGaN/GaN HEMTs Prior to PECVD SiNx Passivation to Reduce Plasma Damage

Low Threshold Voltage Shift in AlGaN/GaN MIS-HEMTs on Si Substrate Using SiNx/SiON As Composite Gate Dielectric

High-performance AlGaN/GaN MIS-HEMT Device Based on in Situ Plasma Nitriding and Low Power Chemical Vapor Deposition Si3N4 Gate Dielectrics

Optimized Transport Properties of GaN MISHEMTs with Thin AlN Interlayer