Abstract:III-nitride heterostructure-based metal–insulator–semiconductor high-electron-mobility transistors (MIS-HEMTs), compared with Schottky and p-GaN gate HEMTs, have demonstrated significant potential in the next-generation high-power electronic devices due to their exceptional gate reliability. This study presents a comprehensive investigation of threshold voltage (VTH) instability in III-nitride heterostructure-based MIS-HEMTs, with a specific emphasis on the interfaces of the multi-heterostructures. Two widely studied amorphous materials, namely, Al2O3 and SiNx, have been extensively examined as primary gate insulators in GaN-based MIS-HEMTs. To efficiently remove native oxides from the (Al)GaN surface, a novel in situ high-temperature remote plasma pretreatment (RPP) technique has been developed. This technique involves sequential application of NH3/N2 plasmas on the (Al)GaN surface before depositing the gate insulators using plasma-enhanced atomic layer deposition. The remarkable RPP process has proven to be a highly effective method for revealing atomic steps on the GaN surface, irrespective of whether the surface has undergone oxidation or etching processes. To further enhance the interface quality and potentially reduce bulk traps in the gate insulator, optimization of deposition temperature and post-deposition annealing conditions have been explored. Additionally, an electron-blocking layer, such as SiON, is incorporated into the MIS-HEMTs to prevent electron injection into bulk traps within the insulator. Novel characterization techniques including constant-capacitance and isothermal-mode deep-level transient spectroscopy have also been developed to explore the failure mechanisms in MIS-HEMTs. These techniques allow for the differentiation between bulk traps in the GaN epitaxy and those present within the gate insulators. This in-depth physical understanding provides valuable insights into the sources of failure in GaN-based MIS-HEMTs.

Characterization and Optimization of AlGaN/GaN Metal-Insulator Semiconductor Heterostructure Field Effect Transistors Using Supercritical CO2/H2O Technology*

Suppressing Temperature Rise in AlGaN/GaN HEMT with Graphene Layers

Performance Enhancement of AlGaN/GaN MIS-HEMTs Realized via Supercritical Nitridation Technology

Fabrication of All-GaN Integrated MIS-HEMTs with High Threshold Voltage Stability Using Supercritical Technology

Investigation of Supercritical Fluid Treatment for SiN/SiON/AlGaN/GaN MIS-HEMTs

Threshold Voltage Instability in III-nitride Heterostructure Metal–insulator–semiconductor High-Electron-mobility Transistors: Characterization and Interface Engineering

Low Threshold Voltage Shift in AlGaN/GaN MIS-HEMTs on Si Substrate Using SiNx/SiON As Composite Gate Dielectric

Enhanced reliability and uniformity for Ge pMOSFET with low temperature supercritical fluid treatment

Improved Vth Stability and Gate Reliability of GaN-Based MIS-HEMTs by Employing Alternating O2 Plasma Treatment

High Performance AlGaN/GaN HEMTs by Supercritical Fluid

Investigation of the Trap States and V Th Instability in Normally-Off GaN MIS-FETs with LPCVD SiNx/PEALD AlN Gate Dielectric Stack and in Situ H2/N2 Plasma Pretreatment

High On/Off Current Ratio and High $\textit{v}_{\text{th}}$ / $\textit{r}_{\text{on}}$ Stability GaN MIS-HEMTs with GaN/AlN Superlattices Barrier

Improved Gate Stability of Metal–Insulator–Semiconductor-High-Electron-Mobility Transistors with 10 Nm Atomic Layer Deposition Al2O3 by Tetramethylammonium Hydroxide Wet Treatment

Enhanced Electrical Characteristics of Ge nMOSFET by Supercritical Fluid CO 2 Treatment With H 2 O 2 Cosolvent

Threshold Voltage Modulation Mechanism of AlGaN/GaN Metal-Insulator-semiconductor High-Electron Mobility Transistors with Fluorinated Al2O3 As Gate Dielectrics

Identification of bulk and interface state-induced threshold voltage instability in metal/SiNx(insulator)/AlGaN/GaN high-electron-mobility transistors using deep-level transient spectroscopy

High On/Off Current Ratio and High <i>V</i><sub>th</sub>/<i>R</i><sub>on</sub> Stability GaN MIS-HEMTs With GaN/AlN Superlattices Barrier

Degradation Mechanisms of Mg-doped GaN/AlN Superlattices HEMTs under Electrical Stress

Simulation study on electrical properties of p-GaN gate normally-off HEMT devices affected by Al mole fraction in AlGaN barrier layer

Revealing the Positive Bias Temperature Instability in Normally-OFF AlGaN/GaN MIS-HFETs by Constant-Capacitance DLTS

High- ${k}$ HfO 2 -Based AlGaN/GaN MIS-HEMTs with Y 2 O 3 Interfacial Layer for High Gate Controllability and Interface Quality