Abstract:Silicon Carbide (SiC) MOSFETs have gained significant attention in power electronics for their superior characteristics. Despite advances in 1.2kV SiC MOSFET generations, a comprehensive comparative analysis of different device types remains limited. This study examines the short-circuit (SC) behavior of 1.2kV SiC MOSFETs across multiple vendors and generations, including planar and trench structures. Key metrics such as Short Circuit Withstand Time (SCWT), SC energy, SC peak power, SC energy density, and SC current density were evaluated at DC bus voltages of 400V, 600V, and 800V. Our findings reveal that third-generation (3G) devices exhibit inferior SC performance due to smaller die areas that impede heat dissipation, with 800V survival times as low as 2.25 μs for GeneSiC-3G. In contrast, trench-based designs showed improved resilience. Infineon-1G, with an active area 44.3% smaller than Littelfuse-1G and 45% smaller than CREE-2G, achieved comparable SCWT (4.5 μs vs. 4.5 μs for Littelfuse and 4 μs for CREE-2G) while demonstrating superior thermal management, with a SC energy density of 0.096 J/mm² and current density of 41.74 A/mm² at 800V. Similarly, another trench device, Rohm-3G, outperformed planar 3G devices, with a SCWT of 3.5 μs and peak power of 110 kW at 800V. Post-SC failure mechanisms were systematically analyzed using optical microscopy, Lock-In Thermal Emission Microscopy (LITEM), and Focused Ion Beam (FIB), revealing gate leakage paths and damage in the active regions and two-finger area. These findings offer significant insights into the trade-offs between on-state performance and SC robustness, providing manufacturers and designers with crucial guidance for developing optimized SiC MOSFET designs for high-power applications.

Multiple Failure Mode Identification of SiC Planar MOSFETs in Short-Circuit Operation

Understanding Short-Circuit Failure Mechanism of Double-Trench SiC Power MOSFETs

Investigation of SiC Trench MOSFETs' Reliability under Short-Circuit Conditions

Gate Failure Physics of SiC MOSFETs Under Short-Circuit Stress

Comprehensive Short Circuit Behavior and Failure Analysis of 1.2kv SiC MOSFETs Across Multiple Vendors and Generations

Experimental Investigations of SiC MOSFETs under Short-Circuit Operations

Experimental and theoretical analyses of gate oxide and junction reliability for 4H-SiC MOSFET under short-circuit operation

Short-Circuit Capability Prediction and Failure Mode of Asymmetric and Double Trench SiC MOSFETs

Analysis of Short-Circuit Behavior for SiC MOSFETs with Various Circuit Characteristics

An In-Depth Investigation into Short-Circuit Failure Mechanisms of State-of-the-Art 1200 V Double Trench SiC MOSFETs

Structure Analysis on the Short-Circuit Robustness for 1200V Planar SiC MOSFETs

Investigation of Short-Circuit Failure Mechanisms of SiC MOSFETs by Varying DC Bus Voltage

On the Short Circuit Electro-Thermal Failure of 1.2 kV 4H-SiC MOSFETs with 3D Cell Layouts

Short Circuit Capability and Short Circuit Induced $v_{\mathrm{th}}$ Instability of a 1.2-Kv SiC Power MOSFET

Short-Circuit Failure Mechanisms of 650-V GaN/SiC Cascode Devices in Comparison With SiC MOSFETs

Unique short-circuit failure mechanisms in 1.2-kV SiC planar MOSFETs

A Temperature-Dependent Analytical Model of SiC MOSFET Short-Circuit Behavior Considering Parasitic Parameters

Short–Circuit Failure Model of SiC MOSFET Including the Interface Trapped Charges

Modeling of SiC MOSFET Behavior in Short-circuit Transient Considering Gate Leakage Current

Investigation and Failure Mode of Asymmetric and Double Trench SiC Mosfet S under Avalanche Conditions

Comparative Evaluation of the Short Circuit Capability of SiC Planar and Trench Power MOSFET