Abstract:Silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) devices exhibit substantial prospects for application under extreme operational conditions, including elevated temperatures, high voltages, and high frequencies. Nevertheless, owing to their distinctive material and structural attributes, SiC MOSFET devices are not devoid of challenges, with the short-circuit phenomenon constituting a pivotal avenue of inquiry. The short-circuit effect pertains to the abrupt escalation of leakage current that these devices might undergo under elevated voltage conditions, thereby exerting a perturbing influence on their stability and reliability. Investigations into the short-circuit effect predominantly revolve around two dimensions: one involves comprehending its underlying physical mechanisms, while the other centers on identifying commensurate remedial approaches.With respect to the underlying physical mechanisms, researchers have discerned that the elevated breakdown field strength and augmented carrier mobility intrinsic to SiC materials engender an augmentation in leakage current, consequently giving rise to the short-circuit effect. Furthermore, factors such as oxide layer anomalies and surface states are also conceivable catalysts for the surge in leakage current. To rectify this predicament, scholars have proffered a panoply of stratagems, encompassing the optimization of material synthesis processes, enhancement of oxide layer quality, refinement of device structural designs, and incorporation of protective circuitry, among others. In summation, the investigation of the short-circuit effect in silicon carbide MOSFET devices is fundamentally aimed at attaining an in-depth comprehension of its causative mechanisms. Moreover, it endeavors to proffer efficacious resolutions conducive to augmenting the reliability and steadfastness of these devices within high-temperature and high-voltage environments, thereby facilitating their widespread integration within the ambit of high-performance power electronics.

Experimental Investigation on Electromagnetic Interference (EMI) in Motor Drive Using Silicon Carbide (SiC) MOSFET

Modeling and Experimental Investigation of Electromagnetic Interference (EMI) for SiC-Based Motor Drive

Research and analysis of electromagnetic interference of a motor drive control system based on PMSM with SiC MOSFET for new energy electric vehicles

Comparative Study on Reliability and Application Features of SiC MOSFET

Modeling and Prediction of Low-frequency Radiated EMI for a SiC Motor Drive System

Analytical Modeling of the Silicon Carbide (sic) MOSFET During Switching Transition for EMI Investigation

Investigation Of The Gate Resistance And The Rc Snubbers On The Emi Suppression In Applying Of The Sic Mosfet

Dynamic Performance of 6.5kV/400A SiC MOSFET Module and its Gate Driver

Experimental Assessment of High Frequency Bearing Currents in an Induction Motor Driven by a SiC Inverter

A Design Investigation of A 1 MVA SiC MOSFET Medium Voltage Variable Frequency Drive with Various Filtering Options

Analytical Modeling of SiC MOSFET During Switching Transient

Analysis and Suppression of Common Mode Voltage for Motor Drive in EV

Comparisons of SiC MOSFET and Si IGBT Based Motor Drive Systems

Analysis and Suppression of Common Mode Voltage for SiC Inverters in Electric Vehicle Applications

Design and Evaluation of a High Performance Silicon Carbide MOSFET Driver

Influence of High-Frequency Operation on the Efficiency of a PMSM Drive with SiC-MOSFET Inverter

An investigation into the short-circuit characteristics of Sic MOSFET power devices

A Review of the types of disturbances and suppression methods for SiC MOSFET driver

Influence of driving and parasitic parameters on the switching behaviors of the SiC MOSFET

Comparisons of SiC and Si devices for PMSM drives