Abstract:Molybdenum disulfide (MoS2), a member of the transition-metal dichalcogenides (TMDs) family, is a semiconducting layered matierial consisting of two atomic layers of S atoms and Mo atoms. Comparing with semimetal graphene, its relatively large band gap makes MoS2 more suitable for applications in logic cricuit. Besides, strong spin orbit coupling and special symmetric structure give MoS2 many intriguing physical and chemical properties. However, contacts between metals and MoS2 remain a critical issue which hinders not only the investigation of the intrinsic properties of MoS2 but also its applications. Therefore, it is urgent to find the technique that can improve the contact condition between metal and MoS2. In this work, using MoO3/Au as the electrode of MoS2 based field effect transistors (FETs), we obtained N-type MoS2 FETs with improved contact conditions. The transport properties of these devices at different temperatures is also investigated. We demonstrated that the Schottky contact of the MoS2 FETs can be well improved by the interlayer MoO3 between MoS2 and metal electrodes: for device with 2 nm thick channel MoS2, the room temperature mobility can be as high as 25 cm2 V–1 s–1, 16 times higher than device without MoO3 contact; for device with 8 nm thick channel MoS2, the highest value of the low temperature mobility is as high as 100 cm2 V–1 s–1. Therefore, we extracted the intrinsic low temperature property of MoS2 FETs: the transport property of few layer MoS2 devices is dominated by the scattering of charge carriers from defect or charge traps; such scattering is weakened as the carrier density increases and screening is improved. The technique demonstrated in this work can also be applied to other TMDs field effect devices.

Screening Fermi-Level Pinning Effect Through Van Der Waals Contacts to Monolayer MoS2

Towards Barrier Free Contact to MoS2 Using Graphene Electrodes

Toward barrier free contact to molybdenum disulfide using graphene electrodes.

Enhancing MoS2 Electronic Performance with Solid-State Lithium-Ion Electrolyte Contacts Through Dielectric Screening.

A "click" Reaction to Engineer MoS2 Field-Effect Transistors with Low Contact Resistance.

Remote N-2 Plasma Treatment to Deposit Ultrathin High-K Dielectric As Tunneling Contact Layer for Single-Layer MoS2 MOSFET

MoS2 Transistor with Weak Fermi Level Pinning via MXene Contacts

High-performance monolayer MoS2 field-effect transistor with large-scale nitrogen-doped graphene electrodes for Ohmic contact

Epitaxial van der Waals contacts for low schottky barrier MoS 2 field effect transistors

Selective Etching in Graphene–mos2 Heterostructures for Fabricating Graphene-Contacted MoS2 Transistors

Transport Properties of MoO&lt;sub&gt;3&lt;/sub&gt; Contacted Few-Layer MoS&lt;sub&gt;2&lt;/sub&gt; N-type Field-Effect Transistor

Enhancing MoS 2 Electronic Performance with Solid-State Lithium-Ion Electrolyte Contacts through Dielectric Screening

MoS2 Transistor with Weak Fermi Level Pinning via MXene Contacts (Adv. Funct. Mater. 43/2022)

Low Contact Resistance on Monolayer MoS2 Field-Effect Transistors Achieved by CMOS-Compatible Metal Contacts

Transferred Van Der Waals Metal Electrodes for Sub-1-nm MoS 2 Vertical Transistors

Electrode Engineering in MoS2 MOSFET: Different Semiconductor/Metal Interfaces

Low Sub-Threshold Swing Realization with Contacts of Graphene/h-Bn/mos2 Heterostructures in MoS2 Transistors

Enhanced contact resistance reduction in MoS2 transistors via ultrathin LiPON electrode interface doping

Junction-configuration-dependent interfacial electronic states of a monolayer MoS2/metal contact

ZrTe2 Compound Dirac Semimetal Contacts for High-Performance MoS2 Transistors.

Fermi level depinning via insertion of a graphene buffer layer at the gold-2D tin monoxide contact