Abstract:2D materials exhibit intriguing electrical and optical properties, making them promising candidates for next-generation nanoelectronic devices. However, the high contact resistance of 2D materials to electrode material often limits the ultimate performance and potential of 2D materials and devices. In this work, we demonstrate a localized femtosecond (fs) laser irradiation process to substantially minimize the resistance of MoS2-metal contacts. A reduction of the contact resistance exceeding three orders of magnitude is achieved for mechanically exfoliated MoS2, which remarkably improves the overall FET performance. The underlying mechanisms of resistance reduction are the removal of organic contamination induced by the transfer process, as well as the lowering of Schottky barrier resistance (RSB) attributed to interface Fermi level pinning (FLP) by Au diffusion, and the lowering of interlayer resistance (Rint) due to interlayer coupling enhancement by Au intercalation under fs laser irradiation. By taking advantage of the improved MoS2-metal contact behavior, a high-performance MoS2 photodetector was developed with a photoresponsivity of 68.8 A W-1 at quite a low Vds of 0.5 V, which is ∼80 times higher than the pristine multilayer photodetector. This contamination-free, site-specific, and universal photonic fabrication technique provides an effective tool for the integration of complex 2D devices, and the mechanism of MoS2-metal interface modification reveals a new pathway to engineer the 2D material-metal interface.

Enhancing MoS2 Electronic Performance with Solid-State Lithium-Ion Electrolyte Contacts Through Dielectric Screening.

Enhancing MoS 2 Electronic Performance with Solid-State Lithium-Ion Electrolyte Contacts through Dielectric Screening

A "click" Reaction to Engineer MoS2 Field-Effect Transistors with Low Contact Resistance.

Contact Optimisation Strategy for Wafer-Scale Field-Effect Transistors Based on Two-Dimensional Semiconductors

Electrode Engineering in MoS2 MOSFET: Different Semiconductor/Metal Interfaces

Enhanced contact resistance reduction in MoS2 transistors via ultrathin LiPON electrode interface doping

ZrTe2 Compound Dirac Semimetal Contacts for High-Performance MoS2 Transistors.

Non-invasively Improving the Schottky Barrier of MoS2/metal Contacts by Inserting a SiC Layer

Two-step Chemical Vapor Deposition Synthesis of NiTe2-MoS2 Vertical Junctions with Improved MoS2 Transistor Performance.

Epitaxial van der Waals contacts for low schottky barrier MoS 2 field effect transistors

Towards Barrier Free Contact to MoS2 Using Graphene Electrodes

Femtosecond Laser Irradiation-Mediated MoS2-Metal Contact Engineering for High-Performance Field-Effect Transistors and Photodetectors.

Toward High-mobility and Low-power 2D MoS2 Field-effect Transistors

Femtosecond Laser Irradiation-Mediated MoS 2 –Metal Contact Engineering for High-Performance Field-Effect Transistors and Photodetectors

Strain-engineered Robust and Schottky-barrier-free Contact in 2D Metal–semiconductor Heterostructure

Toward barrier free contact to molybdenum disulfide using graphene electrodes.

Large capacitance and fast polarization response of thin electrolyte dielectrics by spin coating for two-dimensional MoS2 devices

Enhanced Electrical Properties of Lithography-Free Fabricated MoS<sub>2</sub> Field Effect Transistors with Chromium Contacts

Low Sub-Threshold Swing Realization with Contacts of Graphene/h-Bn/mos2 Heterostructures in MoS2 Transistors

Designing Efficient Metal Contacts to Two-Dimensional Semiconductors MoSi$_2$N$_4$ and WSi$_2$N$_4$ Monolayers

MoS2 Transistor with Weak Fermi Level Pinning via MXene Contacts