On-chip Q-factor Greater Than 1 Billion

Lue Wu,Heming Wang,Qi-Fan Yang,Maodong Gao,Qing-Xin Ji,Boqiang Shen,Chengying Bao,Kerry Vahala

DOI: https://doi.org/10.1364/cleo_si.2020.sw3j.7

2020-01-01

Abstract:A record Q-factor of 1.1 billion is demonstrated in on-chip silica whispering-gallery resonators. Using the devices, sub-milliwatt parametric oscillation threshold is measured in 9 GHz free-spectral-range devices.

What problem does this paper attempt to address?

Greater Than One Billion Q Factor for On-Chip Microresonators

Lue Wu,Heming Wang,Qifan Yang,Qing-xin Ji,Boqiang Shen,Chengying Bao,Maodong Gao,Kerry Vahala

DOI: https://doi.org/10.1364/ol.394940

IF: 3.6

2020-01-01

Optics Letters

Abstract:High optical quality (Q) factors are critically important in optical microcavities, where performance in applications spanning nonlinear optics to cavity quantum electrodynamics is determined. Here, a record Q factor of over 1.1 billion is demonstrated for on-chip optical resonators. Using silica whispering-gallery resonators on silicon, Q-factor data is measured over wavelengths spanning the C/L bands (100 nm) and for a range of resonator sizes and mode families. A record low sub-milliwatt parametric oscillation threshold is also measured in 9 GHz free-spectral-range devices. The results show the potential for thermal silica on silicon as a resonator material.
Broadband Highly Efficient Nonlinear Optical Processes in On-Chip Integrated Lithium Niobate Microdisk Resonators of Q-factor above 108

Renhong Gao,Haisu Zhang,Fang Bo,Wei Fang,Zhenzhong Hao,Ni Yao,Jintian Lin,Jianglin Guan,Li Deng,Min Wang,Lingling Qiao,Ya Cheng

DOI: https://doi.org/10.1088/1367-2630/ac3d52

2021-01-01

New Journal of Physics

Abstract:Microresonators of ultrahigh quality (Q) factors represent a crucial type of photonic devices aiming at ultra-high spectral resolution, ultra-high sensitivity to the environmental perturbations, and efficient nonlinear wavelength conversions at low threshold pump powers. Lithium niobate on insulator (LNOI) microdisks of high Q factors are particularly attractive due to its large second-order nonlinear coefficient and strong electro-optic property. In this letter, we break through the long standing bottleneck in achieving the Q factors of LNOI microresonators beyond 108, which approaches the intrinsic material absorption limit of lithium niobate (LN). The ultra-high Q factors give rise to a rich family of nonlinear optical phenomena from optical parametric oscillation (OPO) to harmonics generation with unprecedented characteristics including ultra-low pump threshold, high wavelength conversion efficiency, and ultra-broad operation bandwidth. Specifically, the threshold of OPO is measured to be only 19.6 μW, and the absolute conversion efficiency observed in the second harmonic generation reaches 23%. The record-breaking performances of the on-chip ultra-high Q LNOI microresonators will have profound implication for both photonic research and industry.
Fabrication of Microresonators of High Q/V Ratios Using Femtosecond Laser Micromachining

M. Wang,J. Lin,Y. Xu,Z. Fang,Z. Liu,W. Fang,Y. Cheng

DOI: https://doi.org/10.1364/cleo_at.2016.jth2a.39

2016-01-01

Abstract:We report on fabrication of on-chip lithium niobate (LN) microresonators with high Q/V ratio by femtosecond laser micromachining. A Purcell-factor of 2.8×10 3 is obtained in a microdisk with a diameter of 6.42 μm.
Dry-etched Ultrahigh-Q Silica Microdisk Resonators on a Silicon Chip

Jiaxin Gu,Jie Liu,Ziqi Bai,Han Wang,Xinyu Cheng,Guanyu Li,Menghua Zhang,Xinxin Li,Qi Shi,Min Xiao,Xiaoshun Jiang

DOI: https://doi.org/10.1364/prj.412840

IF: 7.6

2021-01-01

Photonics Research

Abstract:We demonstrate the fabrication of ultrahigh quality (Q) factor silica microdisk resonators on a silicon chip by inductively coupled plasma (ICP) etching. We achieve a dry-etched optical microresonator with an intrinsic Q factor as high as 1.94 × 10 8 from a 1-mm-diameter silica microdisk with a thickness of 4 μm. Our work provides a chip-based microresonator platform operating in the ultrahigh-Q region that will be useful in nonlinear photonics such as Brillouin lasers and Kerr microcombs.
Single-Mode Silicon-On-Insulator Elliptical Microdisk Resonators with High Q Factors

Kang Xiong,Xi Xiao,Yingtao Hu,Zhiyong Li,Tao Chu,Yude Yu,Jinzhong Yu

DOI: https://doi.org/10.1117/12.920503

2011-01-01

Abstract:We propose and demonstrate a novel elliptical microdisk resonator which enables single-mode operation with high quality (Q) factor. Such elliptical microdisk resonators with pedestal, which consist of plenty of smoothly changing bends with modified curvature radii, can easily achieve single-mode operation due to selective losses introduced by mode transmission mismatches and small curvature radii portion inside the elliptical microdisks. We fabricated the devices on silicon-on-insulator (SOI) platform. Single-mode resonance with high quality factor (Q) of ~105 was experimentally realized. Besides, the proposed elliptical microdisk provides larger coupling strength compared to normal circular microdisk, and hence enables critical coupling with easy-to-fabricate gaps.
High- Q Photonic Crystal Cavity in a Single-Mode Silicon Ridge Waveguide

Yu Ping,Qiu Chen,Hu Ting,Qiu Hui-Ye,Ge Fang-Fang,Jiang Xiao-Qing,Yang Jian-Yi

DOI: https://doi.org/10.1088/0256-307x/30/10/104204

2013-01-01

Abstract:We demonstrate experimentally a high-Q one-dimensional photonic crystal cavity in a widely-used 450 × 220nm single mode silicon ridge waveguide. Transmission spectrum measurement is performed by using the vertical fiber-grating coupling characterization method. The Q factor up to 2.6 × 104 is found by fitting the line shape of the transmission spectrum, and the normalized transmission of nearly 20% is achieved. Three-dimensional finite difference time domain calculations show that the modal volume of the fundamental mode is 1.1(λ/n)3. With the standard silicon waveguide width, the demonstrated 1D PhC cavity may be used as a building block for integrated photonic circuits and on-chip sensing applications.
Ultrahigh-Q Packaged Silica Microrod Cavity for Microcomb Generation

Wen Chen,Lu Yao,Chang Li,Hao-Jing Chen,Daquan Yang,Yun-Feng Xiao

DOI: https://doi.org/10.1364/cleo_si.2022.sth2f.4

2022-01-01

Abstract:A packaged silica microrod cavity with greater than one billion Q factor is demonstrated. Based on this packaged device, a single soliton microcomb with repetition rate of 24 GHz is generated.
Phononic band structure engineering for high-Q gigahertz surface acoustic wave resonators on lithium niobate

Linbo Shao,Smarak Maity,Lu Zheng,Lue Wu,Amirhassan Shams-Ansari,Young-Ik Sohn,Eric Puma,M. N. Gadalla,Mian Zhang,Cheng Wang,Keji Lai,Marko Lončar

DOI: https://doi.org/10.1103/PhysRevApplied.12.014022

2019-05-30

Abstract:Phonons at gigahertz frequencies interact with electrons, photons, and atomic systems in solids, and therefore have extensive applications in signal processing, sensing, and quantum technologies. Surface acoustic wave (SAW) resonators that confine surface phonons can play a crucial role in such integrated phononic systems due to small mode size, low dissipation, and efficient electrical transduction. To date, it has been challenging to achieve high quality (Q) factor and small phonon mode size for SAW resonators at gigahertz frequencies. Here, we present a methodology to design compact high-Q SAW resonators on lithium niobate operating at gigahertz frequencies. We experimentally verify out designs and demonstrate Q factors in excess of $2\times10^4$ at room temperature ($6\times10^4$ at 4 Kelvin) and mode area as low as $1.87 \lambda^2$. This is achieved by phononic band structure engineering, which provides high confinement with low mechanical loss. The frequency-Q products (fQ) of our SAW resonators are greater than $10^{13}$. These high-fQ and small mode size SAW resonators could enable applications in quantum phononics and integrated hybrid systems with phonons, photons, and solid-state qubits.

Mesoscale and Nanoscale Physics,Materials Science
Vhf Cmos-Mems Oxide Resonators With Q > 10,000

wenchien chen,weileun fang,shengshian li

DOI: https://doi.org/10.1109/FCS.2012.6243706

2012-01-01

Abstract:A fully differential CMOS-MEMS oxide resonator fabricated using 0.18 mu m CMOS-MEMS platform via metal wet-etching post process has been demonstrated with Q > 10,000, first time ever in any CMOS-MEMS resonators, and more than 25 dB signal-to-feedthrough ratio at 47.9 MHz. Key to attaining such performance attributes to (1) the bulk-mode vibration to enable exceptional Q and much higher frequencies and (2) the oxide-rich structure with embedded metal electrodes for capacitive transduction, where SiO2 offers better mechanical properties than metals to minimize intrinsic energy loss and where flexible electrical routing facilitates fully differential configuration to suppress capacitive feedthroughs. In addition, a previously developed metal wet-etching technique capable of releasing large device areas has been successfully transferred from 0.35 mu m 2-Poly-4-Metal (2P4M) CMOS process to a new 0.18 mu m 1-Poly-6-Metal (1P6M) technology node, therefore greatly lowering the motional impedance of the capacitively-transduced resonators due to smaller electrode-to-resonator gap spacing and larger transduction areas. This technology paves a way to realize fully-integrated CMOS-MEMS oscillators and filters which might benefit future single-chip transceivers for wireless communications.
422 Million intrinsic quality factor planar integrated all-waveguide resonator with sub-MHz linewidth

Matthew W. Puckett,Kaikai Liu,Nitesh Chauhan,Qiancheng Zhao,Naijun Jin,Haotian Cheng,Jianfeng Wu,Ryan O. Behunin,Peter T. Rakich,Karl D. Nelson,Daniel J. Blumenthal

DOI: https://doi.org/10.1038/s41467-021-21205-4

IF: 16.6

2021-02-10

Nature Communications

Abstract:Abstract High quality-factor (Q) optical resonators are a key component for ultra-narrow linewidth lasers, frequency stabilization, precision spectroscopy and quantum applications. Integration in a photonic waveguide platform is key to reducing cost, size, power and sensitivity to environmental disturbances. However, to date, the Q of all-waveguide resonators has been relegated to below 260 Million. Here, we report a Si 3 N 4 resonator with 422 Million intrinsic and 3.4 Billion absorption-limited Qs. The resonator has 453 kHz intrinsic, 906 kHz loaded, and 57 kHz absorption-limited linewidths and the corresponding 0.060 dB m −1 loss is the lowest reported to date for waveguides with deposited oxide upper cladding. These results are achieved through a careful reduction of scattering and absorption losses that we simulate, quantify and correlate to measurements. This advancement in waveguide resonator technology paves the way to all-waveguide Billion Q cavities for applications including nonlinear optics, atomic clocks, quantum photonics and high-capacity fiber communications.

multidisciplinary sciences
Strain-enhanced high<i>Q</i>-factor GaN micro-electromechanical resonator

Liwen Sang,Meiyong Liao,Xuelin Yang,Huanying Sun,Jie Zhang,Masatomo Sumiya,Bo Shen

DOI: https://doi.org/10.1080/14686996.2020.1792257

IF: 7.821

2020-01-01

Science and Technology of Advanced Materials

Abstract:We report on a highly sensitive gallium nitride (GaN) micro-electromechanical (MEMS) resonator with a record quality factor (Q) exceeding 10(5)at the high resonant frequency (f) of 911 kHz by the strain engineering for the GaN-on-Si structure. Thefof the double-clamped GaN beam bridge is increased from 139 to 911 kHz when the tensile stress is increased to 640 MPa. Although it is usually regarded that the energy dissipation increases with increasing resonant frequency, an ultra-highQ-factor which is more than two orders of magnitude higher than those of the other reported GaN-based MEMS is obtained. The highQ-factor results from the large tensile stress which can be intentionally introduced and engineered in the GaN epitaxial layer by utilizing the lattice mismatch between GaN and Si, leading to the stored elastic energy and drastically decreasing the energy dissipation. The developed GaN MEMS is further demonstrated as a highly sensitive mass sensor with a resolution of 10(-12) g/s through detecting the microdroplet evaporation process. This work provides an avenue to improve thef x Qproduct of the MEMS through an internally strained structure.
A GHz Silicon-Based Width Extensional Mode MEMS Resonator with Q over 10,000

Wenli Liu,Yujie Lu,Zeji Chen,Qianqian Jia,Junyuan Zhao,Bo Niu,Wei Wang,Yalu Hao,Yinfang Zhu,Jinling Yang,Fuhua Yang

DOI: https://doi.org/10.3390/s23083808

IF: 3.9

2023-04-07

Sensors

Abstract:This work presents a silicon-based capacitively transduced width extensional mode (WEM) MEMS rectangular plate resonator with quality factor (Q) of over 10,000 at a frequency of greater than 1 GHz. The Q value, determined by various loss mechanisms, was analyzed and quantified via numerical calculation and simulation. The energy loss of high order WEMs is dominated by anchor loss and phonon-phonon interaction dissipation (PPID). High-order resonators possess high effective stiffness, resulting in large motional impedance. To suppress anchor loss and reduce motional impedance, a novel combined tether was designed and comprehensively optimized. The resonators were batch fabricated based on a reliable and simple silicon-on-insulator (SOI)-based fabrication process. The combined tether experimentally contributes to low anchor loss and motional impedance. Especially in the 4th WEM, the resonator with a resonance frequency of 1.1 GHz and a Q of 10,920 was demonstrated, corresponding to the promising f × Q product of 1.2 × 1013. By using combined tether, the motional impedance decreases by 33% and 20% in 3rd and 4th modes, respectively. The WEM resonator proposed in this work has potential application for high-frequency wireless communication systems.

engineering, electrical & electronic,chemistry, analytical,instruments & instrumentation
Strain-enhanced high Q -factor GaN micro-electromechanical resonator.

Liwen Sang,Meiyong Liao,Xuelin Yang,Huanying Sun,Jie Zhang,Masatomo Sumiya,Bo Shen

DOI: https://doi.org/10.1080/14686996.2020.1792257

IF: 7.821

2020-01-01

Science and Technology of Advanced Materials

Abstract:We report on a highly sensitive gallium nitride (GaN) micro-electromechanical (MEMS) resonator with a record quality factor (Q) exceeding 10(5)at the high resonant frequency (f) of 911 kHz by the strain engineering for the GaN-on-Si structure. Thefof the double-clamped GaN beam bridge is increased from 139 to 911 kHz when the tensile stress is increased to 640 MPa. Although it is usually regarded that the energy dissipation increases with increasing resonant frequency, an ultra-highQ-factor which is more than two orders of magnitude higher than those of the other reported GaN-based MEMS is obtained. The highQ-factor results from the large tensile stress which can be intentionally introduced and engineered in the GaN epitaxial layer by utilizing the lattice mismatch between GaN and Si, leading to the stored elastic energy and drastically decreasing the energy dissipation. The developed GaN MEMS is further demonstrated as a highly sensitive mass sensor with a resolution of 10(-12) g/s through detecting the microdroplet evaporation process. This work provides an avenue to improve thef x Qproduct of the MEMS through an internally strained structure.
An Integrated Ultra-High-Q Resonator for Optical Clocks, Synthesizers, Gyroscopes and Spectroscopy

K. Vahala,K. Y. Yang,D. Y. Oh,S. H. Lee,X. Yi,Q. F. Yang

DOI: https://doi.org/10.1109/ipcon.2017.8116153

2017-01-01

Abstract:A microresonator having Q factors greater than 200 million and featuring a silicon-nitride integrated coupling waveguide is described. The device is a critical advance for new microcavity applications requiring integrated, ultra-high-Q and millimeter-scale cavities.
Ultra-High-Q Silicon Nitride Micro-Resonators For Low-Power Frequency Comb Initiation

Yi Xuan,Yang Liu,Leo T. Varghese,Andrew J. Metcalf,Xiaoxiao Xue,Pei-Hsun Wang,Kyunghun Han,Jose A. Jramillo-Villegas,Sangsik Kim,Li Fan,Jian Wang,Ben Niu,Min Teng,Daniel E. Leaird,Andrew M. Weiner,Minghao Qi

DOI: https://doi.org/10.1364/CLEO_AT.2016.JW2A.75

2016-01-01

Abstract:We report the fabrication and characterization of SiN resonators with intrinsic Qs up to 17 million verified with cavity ring-down measurement. Frequency comb generation threshold down to 2.36 mW is consistent with theoretical estimation.
Six million Q factor micro fused silica shell resonator with teeth-like tines released by femtosecond laser-assisted chemical etching

Tao Zhao,Yan Shi,Kun Lu,Xiang Xi,XueZhong Wu,DingBang Xiao

DOI: https://doi.org/10.1007/s11431-023-2652-9

2024-04-12

Science China Technological Sciences

Abstract:The quality factor ( Q factor) is a crucial performance parameter for resonators. In this paper, a novel release method for high-quality micro fused silica shell resonators with teeth-like tines with good surface morphology is proposed. This method is based on femtosecond laser-assisted chemical etching. First, the optimal energy range of femtosecond laser modification is obtained through mechanism analysis. Second, the optimal parameters for a straight line and arc pattern are determined by optimizing the average output power, processing speed, and processing spacing. The results demonstrate why edge breakage in rounded corners is easy under different parameters. Finally, according to these conclusions, the processing is performed on a micro fused silica shell resonator with a Q factor exceeding 6 million. In addition, subsurface damage is rare throughout the fabrication process, and the surface roughness of the released cross section reaches the nanometer level. The improved Q factor helps suppress mechanical thermal noise and reduce zero bias and zero bias drift, constituting the primary method for enhancing the performance of the resonant gyroscope.

materials science, multidisciplinary,engineering
A series of avoided crossings of resonances in the system of several different dielectric resonators results in giant Q-factors

Konstantin Pichugin,Almas Sadreev,Evgeny Bulgakov

2023-07-12

Abstract:We perform optimization of Q-factor in the system of freestanding three/four/five/six coaxial subwavelength dielectric disks over all scales. Each parameter contributes almost one order of magnitude of the Q-factor due to multiple avoided crossings of resonances to give totally the unprecedented values for the Q-factors: $6.6\cdot10^4$ for the three, $4.8\cdot10^6$ for four, $8.5\cdot10^7$ for five and one billion for six freestanding silicon disks. By multipole analysis of the resulting hybridized resonant mode we observe that such extremely large values of the $Q$-factor are attributed to strong redistribution of radiation that originates from almost exact destructive interference of dominating complex multipole radiation amplitudes.

Optics
Planar superconducting resonators with internal quality factors above one million

A. Megrant,C. Neill,R. Barends,B. Chiaro,Yu Chen,L. Feigl,J. Kelly,Erik Lucero,Matteo Mariantoni,P. J. J. O’Malley,D. Sank,A. Vainsencher,J. Wenner,T. C. White,Y. Yin,J. Zhao,C. J. Palmstrøm,John M. Martinis,A. N. Cleland

DOI: https://doi.org/10.1063/1.3693409

IF: 4

2012-03-12

Applied Physics Letters

Abstract:We describe the fabrication and measurement of microwave coplanar waveguide resonators with internal quality factors above 107 at high microwave powers and over 106 at low powers, with the best low power results approaching 2×106, corresponding to ∼1 photon in the resonator. These quality factors are achieved by controllably producing very smooth and clean interfaces between the resonators’ aluminum metallization and the underlying single crystal sapphire substrate. Additionally, we describe a method for analyzing the resonator microwave response, with which we can directly determine the internal quality factor and frequency of a resonator embedded in an imperfect measurement circuit.

physics, applied
Million-Q Free Space Meta-Optical Resonator at Visible Wavelengths

Jie Fang,Rui Chen,David Sharp,Enrico M. Renzi,Arnab Manna,Abhinav Kala,Sander A. Mann,Kan Yao,Christopher Munley,Hannah Rarick,Andrew Tang,Sinabu Pumulo,Yuebing Zheng,Vinod M. Menon,Andrea Alu,Arka Majumdar

2024-09-05

Abstract:High-quality (Q)-factor optical resonators with extreme temporal coherence are of both technological and fundamental importance in optical metrology, continuous-wave lasing, and semiconductor quantum optics. Despite extensive efforts in designing high-Q resonators across different spectral regimes, the experimental realization of very large Q-factors at visible wavelengths remains challenging due to the small feature size that is sensitive to fabrication imperfections, and thus is typically implemented in integrated photonics. In the pursuit of free-space optics with the benefits of large space-bandwidth product and massive parallel operations, here we design and fabricate a visible-wavelength etch-free metasurface with minimized fabrication defects and experimentally demonstrate a million-scale ultrahigh-Q resonance. A new laser-scanning momentum-space-resolved spectroscopy technique with extremely high spectral and angular resolution is developed to characterize the record-high Q-factor as well as the dispersion of the million-Q resonance in free space. By integrating monolayer WSe2 into our ultrahigh-Q meta-resonator, we further demonstrate laser-like highly unidirectional and narrow-linewidth exciton emission, albeit without any operating power density threshold. Under continuous-wave laser pumping, we observe pump-power-dependent linewidth narrowing at room temperature, indicating the potential of our meta-optics platform in controlling coherent quantum light-sources. Our result also holds great promise for applications like optical sensing, spectral filtering, and few-photon nonlinear optics.

Optics,Applied Physics
High-Q Silicon Nitride Microresonators Exhibiting Low-Power Frequency Comb Initiation

Yi Xuan,Yang Liu,Leo T. Varghese,Andrew J. Metcalf,Xiaoxiao Xue,Pei-Hsun Wang,Kyunghun Han,Jose A. Jaramillo-Villegas,Abdullah Al Noman,Cong Wang,Sangsik Kim,Min Teng,Yun Jo Lee,Ben Niu,Li Fan,Jian Wang,Daniel E. Leaird,Andrew M. Weiner,Minghao Qi

DOI: https://doi.org/10.1364/optica.3.001171

IF: 10.4

2016-01-01

Optica

Abstract:Optical resonators with high quality factors (Qs) are promising for a variety of applications due to the enhanced nonlinearity and increased photonic density of states at resonances. In particular, frequency combs (FCs) can be generated through four-wave mixing in high-Q microresonators made from Kerr nonlinear materials such as silica, silicon nitride, magnesium fluoride, and calcium fluoride. These devices have potential for on-chip frequency metrology and high-resolution spectroscopy, high-bandwidth radiofrequency information processing, and high-data-rate telecommunications. Silicon nitride microresonators are attractive due to their compatibility with integrated circuit manufacturing; they can be cladded with silica for long-term stable yet tunable operation, and allow multiple resonators to be coupled together to achieve novel functionalities. Despite previous demonstrations of high-Q silicon nitride resonators, FC generation using silicon nitride microresonator chips still requires pump power significantly higher than those in whispering gallery mode resonators made from silica, magnesium, and calcium fluorides, which all have shown resonator Qs between 0.1 and 100 billion. Here, we report on a fabrication procedure that leads to the demonstration of "finger-shaped" Si3N4 microresonators with intrinsic Qs up to 17 million at a free spectrum range (FSR) of 24.7 GHz that are suitable for telecommunication and microwave photonics applications. The frequency comb onset power can be as low as 2.36 mW and broad, single FSR combs can be generated at a low pump power of 24 mW, both within reach of on-chip semiconductor lasers. Our demonstration is an important step toward a fully integrated on-chip FC source. (C) 2016 Optical Society of America

On-chip Q-factor Greater Than 1 Billion

Greater Than One Billion Q Factor for On-Chip Microresonators

Broadband Highly Efficient Nonlinear Optical Processes in On-Chip Integrated Lithium Niobate Microdisk Resonators of Q-factor above 108

Fabrication of Microresonators of High Q/V Ratios Using Femtosecond Laser Micromachining

Dry-etched Ultrahigh-Q Silica Microdisk Resonators on a Silicon Chip

Single-Mode Silicon-On-Insulator Elliptical Microdisk Resonators with High Q Factors

High- Q Photonic Crystal Cavity in a Single-Mode Silicon Ridge Waveguide

Ultrahigh-Q Packaged Silica Microrod Cavity for Microcomb Generation

Phononic band structure engineering for high-Q gigahertz surface acoustic wave resonators on lithium niobate

Vhf Cmos-Mems Oxide Resonators With Q > 10,000

422 Million intrinsic quality factor planar integrated all-waveguide resonator with sub-MHz linewidth

Strain-enhanced high<i>Q</i>-factor GaN micro-electromechanical resonator

A GHz Silicon-Based Width Extensional Mode MEMS Resonator with Q over 10,000

Strain-enhanced high Q -factor GaN micro-electromechanical resonator.

An Integrated Ultra-High-Q Resonator for Optical Clocks, Synthesizers, Gyroscopes and Spectroscopy

Ultra-High-Q Silicon Nitride Micro-Resonators For Low-Power Frequency Comb Initiation

Six million Q factor micro fused silica shell resonator with teeth-like tines released by femtosecond laser-assisted chemical etching

A series of avoided crossings of resonances in the system of several different dielectric resonators results in giant Q-factors

Planar superconducting resonators with internal quality factors above one million

Million-Q Free Space Meta-Optical Resonator at Visible Wavelengths

High-Q Silicon Nitride Microresonators Exhibiting Low-Power Frequency Comb Initiation