Abstract:In this article, the failure behavior and mechanism of p-GaN gate AlGaN/GaN high-electron-mobility transistors (HEMTs) in the third quadrant under repetitive surge current stress are investigated. Repetitive stress tests with different surge current peak values I-peak are carried out. At high I-peak , as the stress cycle increases, the evolution of the peak value of surge voltage induced by surge current shows an obvious turning phenomenon and a significant increasing trend. When the surge voltage reaches a certain value, the gate-to-source breakdown occurs, and then, the device is burned out. We propose that the degradation of the third-quadrant conduction characteristics results in the change of surge voltage, and excessive electric field intensity induced by high gate-to-drain voltage V(GD )causes the gate Schottky junction breakdown. It is confirmed by further experiments, electrical performance characterization, and simulation. Inconsistent degradation of the two-dimensional electron gas (2DEG) channel in various regions causes the aforementioned turning phenomenon. As the stress cycle increases, the channel degradation in the gate-to-source/drain access region occupies a dominant position. In this situation, the V-GD increases continuously, which will enhance the tunneling effect at the Schottky junction, until breakdown occurs. Besides, the device shows better surge current reliability at higher gate-to-source voltage. These results provide important insights into the improvement of GaN HEMTs reliability.

Electrostatic Discharge (ESD) Behavior of P-Gan HEMTs

The ESD Behavior of D-Mode GaN MIS-HEMT

The ESD Behavior of Enhancement GaN HEMT Power Device with p-GaN Gate Structure

Analysis of Trap and Recovery Characteristics Based on Low-Frequency Noise for E-Mode GaN HEMTs under Electrostatic Discharge Stress

A Comparative Study on G-to-S ESD Robustness of the Ohmic-Gate and Schottky-Gate p-GaN HEMTs

Simulation Study of a High Gate-to-Source ESD Robustness Power P-Gan HEMT with Self-Triggered Discharging Channel

Failure Behavior and Mechanism of P-Gan Gate AlGaN/GaN HEMTs in the Third Quadrant under Repetitive Surge Current Stress

Investigation of Problems in JEDEC HBM ESD Test Standard

ESD HBM Discharge Model in RF GaN-on-Si (MIS)HEMTs

Virtual-Body P-Gan Gate HEMT with Enhanced Ruggedness Against Hot-Electron-Induced Degradation

ON-state Human Body Model ESD Failure Mechanisms in GaN-on-Si RF MIS-HEMTs

Failure Analysis of 200V P-Gan HEMT under Unclamped Inductive Switching Conditions

Experimental Demonstration of an Integrated Bidirectional Gate ESD Protection Structure for P-Gan Power HEMTs

Investigating the Failure Mechanism of p-GaN Gate HEMTs under High Power Stress with a Transparent ITO Gate

Frequency- and Temperature-Dependent Gate Reliability of Schottky-Type P-Gan Gate HEMTs

Study on Single Event Effects of Enhanced GaN HEMT Devices under Various Conditions

Gate Damage Mechanism of Schottky-Type P-Gan Gate HEMTs in Reverse Conduction Mode under Surge Current Stress

Degradation Behavior and Mechanism of GaN HEMTs with P-Type Gate in the Third Quadrant under Repetitive Surge Current Stress

Normally-Off Schottky-Gate P-Gan HEMTs with Enhanced Irradiation Hardness

Charge Trapping Related Channel Modulation Instability in P-GaN Gate HEMTs.

Investigation of the Progressive Gate Breakdown Behaviors in p-GaN Gate HEMTs