Abstract:In hydrogenated Ga‐rich InGaAsN alloys, thermal annealing changes the mechanical properties of the matrix surrounding an N–H complex, by inducing an In (green spheres) clustering around N. The C2v complex (left side), favored in the pristine alloy, is replaced by the NHbc one (right side) in the annealed alloy, with an ensuing change of the alloy energy gap. In a previous study, puzzling experimental results regarding the neutralization of N effects on the bandgap energy in the hydrogenated In0.21Ga0.79As0.975N0.025 alloy were explained by theoretical investigations revealing the occurrence of a novel phenomenon: thermal annealing changes the InGaAs host‐matrix by making it able to exert a selection of the N–H complexes responsible of the N neutralization. In view of technological applications of this effect, the underlying selective host‐matrix model was carefully checked here by theoretically investigating InGaAsN alloys of different compositions ranging from Ga‐rich to In‐rich. As a most important result, such an extensive investigation inspired a comprehensive explanation of the origin of the host‐matrix effect which clarifies how the effect works, firmly establishes its occurrence, gives indications for a bandgap tuning based on a matrix design, sets conditions for its extension to other III‐V‐N alloys and suggests ways to induce fine changes of the alloy mechanical behavior.

Peculiarities of the Hydrogenated In(Asn) Alloy

Nonresonant Hydrogen Dopants in In(Asn): A Route to High Electron Concentrations and Mobilities

Nitrogen Modification of Hydrogenated Amorphous Carbon Films

N-nH complexes in GaAs studied at the atomic scale by cross-sectional scanning tunneling microscopy

Effects of Substrate and N Content on the Growth of the Mid-Infrared Dilute Nitride InAsN Alloy

Origin and Potentialities of the Selective Host‐Matrix Effect in Hydrogenated III‐V‐N Alloys.

Effect of Low Nitrogen Concentrations on the Electronic Properties of Inas1-Xnx

Nitrogen local electronic structure in Ga(In)AsN alloys by soft-x-ray absorption and emission: Implications for optical properties

In situ photoemission electron spectroscopy study of nitrogen ion implanted AISI-H13 steel

Does Hydrogen Change the Fullerenelike Structure in CNx Thin Films?

Nitrogenated Amorphous Carbon As a Semiconductor

In(AsN) Mid-Infrared Emission Enhanced by Rapid Thermal Annealing

Raman and Ft-Ir Study on Structure and Its Stability of Hydrogenated Amorphous Germanium-Nitrogen Alloys

Electronic Behaviour and Field Emission of A-C:H:n/si Heterojunctions

Ni Diffusion and Its Influence on Electrical Properties of AlxGa1−xN∕GaN Heterostructures

Formation of the thermal donors in the hydrogen-implanted nitrogen-doped silicon crystal

H-Tailored Surface Conductivity in Narrow Band Gap In(Asn)

Doping Effects in Co-deposited Mixed Phase Films of Hydrogenated Amorphous Silicon Containing Nanocrystalline Inclusions

Effect of Rapid Thermal Annealing on Behavior of Nitrogen in GaAsN Alloys

Growth and Characterization of InAsN/GaAs Dilute Nitride Semiconductor Alloys for the Midinfrared Spectral Range

Mid-infrared photoluminescence of InAsN dilute nitride alloys grown by LPE and MBE