Gate-Tunable Polar Optical Phonon to Piezoelectric Scattering in Few-Layer Bi2 O2 Se for High-Performance Thermoelectrics.

Dongzhi Chi
DOI: https://doi.org/10.1002/adma.202004786
IF: 29.4
2020-01-01
Advanced Materials
Abstract:Atomically thin Bi2O2Se has emerged as a new member in 2D materials with ultrahigh carrier mobility and excellent air-stability, showing great potential for electronics and optoelectronics. In addition, its ferroelec tric nature renders an ultralow thermal conductivity, making it a perfect candidate for thermoelectrics. In this work, the thermoelectric performance of 2D Bi2O2Se is investigated over a wide temperature range (20-300 K). A gate-tunable transition from polar optical phonon (POP) scattering to piezoelectric scattering is observed, which facilitates the capacity of drastic mobility engineering in 2D Bi2O2Se. Consequently, a high power factor of more than 400 mu W m(-1) K-2 over an unprecedented temperature range (80 200 K) is achieved, corresponding to the persistently high mobility arising from the highly gate-tunable scattering mechanism. This finding provides a new avenue for maximizing thermoelectric performance by changing the scattering mechanism and carrier mobility over a wide temperature range.
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