Influence of deposition pressure on the structural, optical and electrical properties of Sb2Se3 thin films grown by RF magnetron sputtering

Fei Zhao,Jiahua Tao,Yixin Guo,Chuanhe Ma,Jinchun Jiang,Junhao Chu
2019-01-01
Abstract:In this paper, Sb2Se3 thin films were deposited on quartz substrates by radio frequency (RF) magnetron sputtering at different deposition pressures. The structural, optical and electrical properties of the Sb2Se3 films were investigated by XRD, Raman, XPS, SEM, Hall Effect and UV-Vis measurements. With optimized deposition pressure of 0.5 Pa, the fabricated Sb2Se3 film has the highest crystallinity, the most stable valence of Se2- and Sb3+, the maximum mobility (21.54 cm(2) V-1 s(-1)) and the suitable optical band gap (1.33 eV). This study provides a guideline to prepare Sb2Se3 film for photovoltaics.
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