Abstract:Engineering the substrate of 2D transition metal dichalcogenides can couple the quasiparticle interaction between the 2D material and substrate, providing an additional route to realize conceptual quantum phenomena and novel device functionalities, such as realization of a 12-time increased valley spitting in single-layer WSe2 through the interfacial magnetic exchange field from a ferromagnetic EuS substrate, and band-to-band tunnel field-effect transistors with a subthreshold swing below 60 mV dec(-1) at room temperature based on bilayer n-MoS2 and heavily doped p-germanium, etc. Here, it is demonstrated that epitaxially grown single-layer MoS2 on a lattice-matched GaN substrate, possessing a type-I band alignment, exhibits strong substrate-induced interactions. The phonons in GaN quickly dissipate the energy of photogenerated carriers through electron-phonon interaction, resulting in a short exciton lifetime in the MoS2/GaN heterostructure. This interaction enables an enhanced valley helicity at room temperature (0.33 +/- 0.05) observed in both steady-state and time-resolved circularly polarized photoluminescence measurements. The findings highlight the importance of substrate engineering for modulating the intrinsic valley carriers in ultrathin 2D materials and potentially open new paths for valleytronics and valley-optoelectronic device applications.

Tunable Geometric Photocurrent in Van Der Waals Heterostructure

Electrical Control of Circular Photogalvanic Spin-Valley Photocurrent in a Monolayer Semiconductor

Generation and Electric Control of Spin–valley-Coupled Circular Photogalvanic Current in WSe2

Room-Temperature Geometrical Circular Photocurrent in Few-Layer MoS 2

Manipulating Spin-polarized Photocurrent in 2D Transition Metal Dichalcogenides

Spin- and Valley-Resolved Tunneling Magnetoresistance in a Ferromagnetic Transition Metal Dichalcogenide Planar Heterojunction Modulated by Polarized Light

Generation and Electric Control of Spin-Coupled Valley Current in WSe2

A room-temperature gate-tunable bipolar valley Hall effect in molybdenum disulfide/tungsten diselenide heterostructures

Valley-selective Circular Dichroism of Monolayer Molybdenum Disulphide

Electrically Tunable Valley Dynamics in Twisted WSe_{2}/WSe_{2} Bilayers

Interface Engineering Modulated Valley Polarization in MoS2/hBN Heterostructure

Photoinduced valley-polarized current of layered MoS2 by electric tuning

Valley polarization and photocurrent generation in transition metal dichalcogenide alloy MoS$_{2x}$Se$_{2(1-x)}$

Electric field controlled valley-polarized photocurrent switch based on the circular bulk photovoltaic effect

Dichroic Spin–valley Photocurrent in Monolayer Molybdenum Disulphide

Opto-valleytronic imaging of atomically thin semiconductors

Polarization switching and electrical control of interlayer excitons in two-dimensional van der Waals heterostructures

Manipulating Valley-Polarized Photoluminescence of MoS2 Monolayer at off Resonance Wavelength with a Double-Resonance Strategy

Epitaxial Single-Layer MoS2 on GaN with Enhanced Valley Helicity

Photon Wavelength Dependent Valley Photocurrent in Multilayer MoS2

Room temperature interlayer exciton valley polarization and valley Hall effect