Abstract:The study demonstrates highly electron‐doped multi‐monolayer 2H‐MoS2 through planar organic ion intercalation (1‐ethyl‐3‐methylimidazolium, EMIM+), maintaining a direct bandgap with high photoluminescence intensity, and stable valley polarization up to room temperature for future applications of valleytronics and spintronics. Monolayer (1L) group VI transition metal dichalcogenides (TMDs) exhibit broken inversion symmetry and strong spin‐orbit coupling, offering promising applications in optoelectronics and valleytronics. Despite their direct bandgap, high absorption coefficient, and spin‐valley locking in K or K' valleys, the ultra‐short valley lifetime limits their room‐temperature applications. In contrast, multilayer TMDs, with more absorptive layers, sacrifice the direct bandgap and valley polarization upon gaining inversion symmetry from the bilayer structure. It is demonstrated that multilayer molybdenum disulfide (MoS2) can maintain 1) a structure with broken inversion symmetry and strong spin‐orbit coupling, 2) a direct bandgap with high photoluminescence (PL) intensity, and 3) stable valley polarization up to room temperature. Through the intercalation of organic 1‐ethyl‐3‐methylimidazolium (EMIM+) ions, multilayer MoS2 not only exhibits layer decoupling but also benefits from an electron doping effect. This results in a hundredfold increase in PL intensity and stable valley polarization, achieving 55% and 16% degrees of valley polarization at 3 K and room temperature, respectively. The persistent valley polarization at room temperature, due to interlayer decoupling and trion dominance facilitated by a gate‐free method, opens up potential applications in valley‐selective optoelectronics and valley transistors.

Room-Temperature Geometrical Circular Photocurrent in Few-Layer MoS 2

Photon Wavelength Dependent Valley Photocurrent in Multilayer MoS2

Ultrafast Investigation of Room Temperature Valley Polarization in “optical Bilayer” WS 2

Indirect‐To‐Direct Bandgap Crossover and Room‐Temperature Valley Polarization of Multilayer MoS2 Achieved by Electrochemical Intercalation

Electrical Control of Circular Photogalvanic Spin-Valley Photocurrent in a Monolayer Semiconductor

Manipulating Valley-Polarized Photoluminescence of MoS2 Monolayer at off Resonance Wavelength with a Double-Resonance Strategy

Valley-selective Circular Dichroism of Monolayer Molybdenum Disulphide

Photoinduced valley-polarized current of layered MoS2 by electric tuning

Valley magnetoelectricity in single-layer MoS2

Epitaxial Single-Layer MoS2 on GaN with Enhanced Valley Helicity

Environment-insensitive and gate-controllable photocurrent enabled by bandgap engineering of MoS2 junctions

Room temperature interlayer exciton valley polarization and valley Hall effect

MoS_2 as an ideal material for valleytronics: valley-selective circular dichroism and valley Hall effect

Dichroic Spin–valley Photocurrent in Monolayer Molybdenum Disulphide

Valley polarization and photocurrent generation in transition metal dichalcogenide alloy MoS$_{2x}$Se$_{2(1-x)}$

Exploring the Valleytronic, Optical, and Piezoelectric Properties of Janus MoBXY2 (X = N, P; Y = S, Se, Te) Monolayers for Multifunctional Applications

Giant paramagnetism induced valley polarization of electrons in charge-tunable monolayer MoSe2

Opto-valleytronic imaging of atomically thin semiconductors

Optically and magnetically addressable valley pseudospin of interlayer excitons in bilayer MoS2

Room-temperature bipolar valleytronic transistor in MoS2/WSe2 heterostructures

Anomalous valley polarization in monolayer MoSe2