Abstract:The study demonstrates highly electron‐doped multi‐monolayer 2H‐MoS2 through planar organic ion intercalation (1‐ethyl‐3‐methylimidazolium, EMIM+), maintaining a direct bandgap with high photoluminescence intensity, and stable valley polarization up to room temperature for future applications of valleytronics and spintronics. Monolayer (1L) group VI transition metal dichalcogenides (TMDs) exhibit broken inversion symmetry and strong spin‐orbit coupling, offering promising applications in optoelectronics and valleytronics. Despite their direct bandgap, high absorption coefficient, and spin‐valley locking in K or K' valleys, the ultra‐short valley lifetime limits their room‐temperature applications. In contrast, multilayer TMDs, with more absorptive layers, sacrifice the direct bandgap and valley polarization upon gaining inversion symmetry from the bilayer structure. It is demonstrated that multilayer molybdenum disulfide (MoS2) can maintain 1) a structure with broken inversion symmetry and strong spin‐orbit coupling, 2) a direct bandgap with high photoluminescence (PL) intensity, and 3) stable valley polarization up to room temperature. Through the intercalation of organic 1‐ethyl‐3‐methylimidazolium (EMIM+) ions, multilayer MoS2 not only exhibits layer decoupling but also benefits from an electron doping effect. This results in a hundredfold increase in PL intensity and stable valley polarization, achieving 55% and 16% degrees of valley polarization at 3 K and room temperature, respectively. The persistent valley polarization at room temperature, due to interlayer decoupling and trion dominance facilitated by a gate‐free method, opens up potential applications in valley‐selective optoelectronics and valley transistors.

Photon Wavelength Dependent Valley Photocurrent in Multilayer MoS2

Zeeman-Induced Valley-Sensitive Photocurrent in Monolayer MoS2

Dichroic Spin–valley Photocurrent in Monolayer Molybdenum Disulphide

Photoinduced valley-polarized current of layered MoS2 by electric tuning

Optically and magnetically addressable valley pseudospin of interlayer excitons in bilayer MoS2

Indirect‐To‐Direct Bandgap Crossover and Room‐Temperature Valley Polarization of Multilayer MoS2 Achieved by Electrochemical Intercalation

Room-Temperature Geometrical Circular Photocurrent in Few-Layer MoS 2

Manipulating Valley-Polarized Photoluminescence of MoS2 Monolayer at off Resonance Wavelength with a Double-Resonance Strategy

Transport and Spatial Separation of Valley Coherence Via Few Layer WS2 Exciton-Polaritons

Ultrafast Investigation of Room Temperature Valley Polarization in “optical Bilayer” WS 2

Anomalous valley polarization in monolayer MoSe2

Valley-selective Circular Dichroism of Monolayer Molybdenum Disulphide

Valley polarization in MoS 2 monolayers by optical pumping

Electrical Control of Circular Photogalvanic Spin-Valley Photocurrent in a Monolayer Semiconductor

Opto-valleytronic imaging of atomically thin semiconductors

Tunable Geometric Photocurrent in Van Der Waals Heterostructure

Valley polarization in MoS2 monolayers by optical pumping

Interface Engineering Modulated Valley Polarization in MoS2/hBN Heterostructure

Room temperature interlayer exciton valley polarization and valley Hall effect

Interlayer Exciton Complexes in Bilayer MoS2

Observation of ~100% valley-coherent excitons in monolayer MoS2 through giant enhancement of valley coherence time