Electric field controlled valley-polarized photocurrent switch based on the circular bulk photovoltaic effect

Yaqing Yang,Xiaoyu Cheng,Liantuan Xiao,Suotang Jia,Jun Chen,Lei Zhang,Jian Wang

DOI: https://doi.org/10.1103/PhysRevB.109.235403

2024-06-14

Abstract:Efficient electric manipulation of valley degrees of freedom is critical and challenging for the advancement of valley-based information science and technology. We put forth an electrical scheme, based on a two-band Dirac model, that can switch the fully valley-polarized photocurrent between K and K' valleys using the circular bulk electro-photovoltaic effect. This is accomplished by applying an out-of-plane electric field to the two-dimensional valley materials, which enables continuous tuning of the Berry curvature and its sign flip. We found that the switch of the fully valley-polarized photocurrent is directly tied to the sign change of Berry curvature, which accompanies a topological phase transition, for instance, the quantum spin Hall effect and the quantum valley Hall effect. This scheme has been confirmed in monolayer BiAsI2 and germanene through first-principles calculations. Our paper offers a promising strategy for the development of a volatile valley-addressable memory device and could inspire further research in this area.

Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

The problem that this paper attempts to solve is: how to effectively control and switch the fully valley - polarized photocurrent in two - dimensional valley materials through an external electric field. Specifically, the paper proposes an electrical scheme based on the circular - polarized bulk photovoltaic effect (CBEPV), which can switch the fully valley - polarized photocurrent between the K and K' valleys. This research aims to provide a new strategy for the development of information science and technology based on valley degrees of freedom and explore its potential application in volatile valley - addressable memory devices.

### Main problem decomposition

1. **Efficient manipulation of valley degrees of freedom**:
- Utilizing valley degrees of freedom in information encoding, storage, and transmission requires the generation and efficient control of valley polarization.
- Electric - field tuning is a low - power - consumption and efficient method, but the research on directly using electric - field - induced valley switching as volatile valley - addressable memory devices has not been in - depth.

2. **Switching mechanism of valley - polarized photocurrent**:
- By applying an out - of - plane electric field to adjust the Berry curvature and its sign flipping, thereby achieving the switching of the valley - polarized photocurrent.
- This process is accompanied by a topological phase transition, such as the transition between the quantum spin Hall effect (QSHE) and the quantum valley Hall effect (QVHE).

3. **Experimental verification**:
- The switching of the valley - polarized photocurrent in monolayer BiAsI₂ and germanene has been verified by first - principles calculations.
- The proposed scheme shows the potential application value of two - dimensional valley materials in volatile valley - addressable memory devices.

### Core contributions

- **Theoretical model**: Based on the two - band Dirac model, it is analytically shown that the fully valley - polarized photocurrent can be switched between the K and K' valleys through the CBEPV effect.
- **Physical mechanism**: It is revealed that by applying an out - of - plane electric field to change the sign of the Berry curvature, which in turn affects the valley - dependent optical selection rules and the CBEPV - induced valley - dependent photocurrent, and finally realizes the switching of the valley - polarized photocurrent.
- **Experimental verification**: Through first - principles calculations, it is proved that the switching of the valley - polarized photocurrent in monolayer BiAsI₂ and germanene can be achieved by adjusting the out - of - plane electric field.

### Conclusion

The paper proposes a scheme for controlling the valley - polarized photocurrent through an electric field and successfully realizes the switching of the valley - polarized photocurrent in monolayer BiAsI₂ and germanene. This provides new possibilities for the future development of electronic storage devices based on valley degrees of freedom.