Optical control of the valley Zeeman effect through many-exciton interactions
Weijie Li,Xin Lu,Jiatian Wu,Ajit Srivastava
DOI: https://doi.org/10.1038/s41565-020-00804-0
IF: 38.3
2020-11-30
Nature Nanotechnology
Abstract:Charge carriers in two-dimensional transition metal dichalcogenides (TMDs), such as WSe<sub>2</sub>, have their spin and valley-pseudospin locked into an optically addressable index that is proposed as a basis for future information processing<sup><a href="/articles/s41565-020-00804-0#ref-CR1">1</a>,<a href="/articles/s41565-020-00804-0#ref-CR2">2</a></sup>. The manipulation of this spin–valley index, which carries a magnetic moment<sup><a href="/articles/s41565-020-00804-0#ref-CR3">3</a></sup>, requires tuning its energy. This is typically achieved through an external magnetic field (<i>B</i>), which is practically cumbersome. However, the valley-contrasting optical Stark effect achieves valley control without <i>B</i>, but requires large incident powers<sup><a href="/articles/s41565-020-00804-0#ref-CR4">4</a>,<a href="/articles/s41565-020-00804-0#ref-CR5">5</a></sup>. Thus, other efficient routes to control the spin–valley index are desirable. Here we show that many-body interactions among interlayer excitons (IXs) in a WSe<sub>2</sub>/MoSe<sub>2</sub> heterobilayer (HBL) induce a steady-state valley Zeeman splitting that corresponds to <i>B</i> ≈ 6 T. This anomalous splitting, present at incident powers as low as microwatts, increases with power and is able to enhance, suppress or even flip the sign of a <i>B</i>-induced splitting. Moreover, the <i>g</i>-factor of valley Zeeman splitting can be tuned by ~30% with incident power. In addition to valleytronics, our results could prove helpful to achieve optical non-reciprocity using two-dimensional materials.
materials science, multidisciplinary,nanoscience & nanotechnology