Abstract:Carbon nanotube field-effect transistors (CNT FETs) have been demonstrated to exhibit high performance only through low-temperature fabrication process and require a low thermal budget to construct monolithic three-dimensional (M3D) integrated circuits (ICs), which have been considered a promising technology to meet the demands of high-bandwidth computing and fully functional integration. However, the lack of high-quality CNT materials at the upper layer and a low-parasitic interlayer dielectric (ILD) makes the reported M3D CNT FETs and ICs unable to provide the predicted high performance. In this work, we demonstrate a multilayer stackable process for M3D integration of high-performance aligned carbon nanotube (A-CNT) transistors and ICs. A low-kappa (similar to 3) interlayer SiO2 layer is prepared from spin-on-glass (SOG) through processes with a highest temperature of 220 C-degrees, presenting low parasitic capacitance between two transistor layers and excellent planarization to offer an ideal surface for the A-CNT and device fabrication process. A high-quality A-CNT film with a carrier mobility of 650 cm(2) V-1 s(-1) is prepared on the ILD layer through a clean transfer process, enabling the upper CNT FETs fabricated with a low-temperature process to exhibit high on-state current (1 mA mu m(-1)) and peak transconductance (0.98 mS mu m(-1)). The bottom A-CNT FETs maintain pristine high performance after undergoing the ILD growth and upper FET fabrication. As a result, 5-stage ring oscillators utilizing the M3D architecture show a gate propagation delay of 17 ps and an active region of approximately 100 mu m(2), representing the fastest and the most compact M3D ICs to date.

Gigahertz Integrated Circuits Based on Carbon Nanotube Films

Monolithic Three‐dimensional Integration of Aligned Carbon Nanotube Transistors for High‐performance Integrated Circuits

Carbon Nanotube Film-Based Radio Frequency Transistors with Maximum Oscillation Frequency above 100 GHz.

Radiofrequency Transistors Based on Aligned Carbon Nanotube Arrays

Carbon Nanotube Network Film-Based Ring Oscillators with Sub 10-Ns Propagation Time and Their Applications in Radio-Frequency Signal Transmission

CNT Electronics: Advances in High‐Performance Carbon‐Nanotube Thin‐Film Electronics (adv. Electron. Mater. 8/2019)

Carbon nanotube-based flexible high-speed circuits with sub-nanosecond stage delays

Terahertz metal-oxide-semiconductor transistors based on aligned carbon nanotube arrays

Carbon Nanotube Complementary Gigahertz Integrated Circuits and Their Applications on Wireless Sensor Interface Systems.

High-Speed Logic Integrated Circuits with Solution-Processed Self-Assembled Carbon Nanotubes

Speeding up carbon nanotube integrated circuits through three-dimensional architecture

High-frequency Performance of Scaled Carbon Nanotube Array Field-Effect Transistors

Enhancement‐Mode Field‐Effect Transistors and High‐Speed Integrated Circuits Based on Aligned Carbon Nanotube Films

Nanotube and Nanowire Transistors

Using Nanoscale Thermocapillary Flows to Create Arrays of Purely Semiconducting Single-Walled Carbon Nanotubes

High-Performance Complementary Transistors and Medium-Scale Integrated Circuits Based on Carbon Nanotube Thin Films.

High-performance Doping-Free Carbon-Nanotube-based CMOS Devices and Integrated Circuits

Highly Temperature-Stable Carbon Nanotube Transistors and Gigahertz Integrated Circuits for Cryogenic Electronics

Flexible CMOS Integrated Circuits Based on Carbon Nanotubes with Sub-10 Ns Stage Delays

Wafer-scale fabrication of carbon-nanotube-based CMOS transistors and circuits with high thermal stability

Scalable Fabrication of Ambipolar Transistors and Radio-Frequency Circuits Using Aligned Carbon Nanotube Arrays.